JANTXV2N6990 [ETC]
TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | FP ; 晶体管| BJT | ARRAY |独立| 50V V（ BR ） CEO | 800MA I（C ） | FP
| 型号： | JANTXV2N6990 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | ARRAY | INDEPENDENT | 50V V(BR)CEO | 800MA I(C) | FP
|
| 文件： | 总19页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion measures necessary to comply
with this document shall be completed by 9 October 2002.
MIL-PRF-19500/559E
9 July 2002
SUPERSEDING
MIL-PRF-19500/559D
10 August 1998
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, UNITIZED, NPN, SILICON, SWITCHING,
FOUR TRANSISTOR ARRAY TYPES 2N6989, 2N6989U, AND 2N6990,
JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, switching transistors in a
four independent chip array. Four levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
1.2 Physical dimensions. See figures 1, 2, 3, 4 (14 pin dual-in-line, 14 pin flat package), and figure 5 (20 pin
surface mount).
1.3 Maximum ratings. (1)
Type
PT
VCBO
(3)
VEBO (3)
VCEO (3)
IC (3)
mA dc
TOP and TSTG
TA = +25°C (2)
W
V dc
V dc
V dc
°C
*2N6989
2N6989U
*2N6990
2.0
1.0
1.0
75
75
75
6
6
6
50
50
50
800
800
800
-65 to +200
-65 to +200
-65 to +200
(1) Maximum voltage between transistors shall be ≥ 500 V dc.
*
(2) Derate linearly 11.43 mW/°C above TA = +25°C for 2N6989 and 2N6989U. Derate linearly 5.71 mW/°C
above TA = +25°C for 2N6990. Ratings apply to total package.
(3) Ratings apply to each transistor in the array.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/559E
1.4 Primary electrical characteristics. Characteristics apply to each transistor in the array.
hFE2 (1)
VCE = 10 V dc
hFE4 (1)
VCE = 10 V
dc
Cobo
VCB = 10 V dc
Limits
Switching
IC = 1.0 mA dc
IC = 150 mA
dc
IE = 0
100 kHz ≤ f ≤ 1
MHz
ton
toff
See figure
See figure
6
7
pF
ns
ns
Min
Max
75
325
100
300
8
35
300
|hFE
|
VCE(sat)2 (1)
IC = 500 mA
dc
VBE(sat)2 (1)
IC = 500 mA dc
IB = 50 mA dc
Limits
VCE = 20 V
dc
IC = 20 mA dc IB = 50 mA dc
f = 100 MHz
V dc
V dc
2.0
Min
Max
2.5
8.0
1.0
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750
-
Semiconductor Devices, General Specification for.
-
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein (except for related associated specifications or specification sheets), the text of this document takes
precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
2
MIL-PRF-19500/559E
FIGURE 1. Dimensions and configuration for type 2N6989.
3
MIL-PRF-19500/559E
Dimensions
Inches Millimeters
Dimensions
Inches Millimeters
Min Max
.100 BSC
Symbol
Notes
Symbol
Notes
7, 11
Min
Max
.200
Min
Max
5.08
Min
Max
BH
LW
LS
LL
2.54 BSC
.014
.030
.008
.023
.070
.015
.785
.310
0.36
0.76
0.20
0.58
1.78
0.38
19.94
7.87
10
4, 10
10
.125
.200
3.18
3.81
0.13
5.08
.150
.005
LW1
LT
LL1
LO
8
8
5
BL
6
LO1
LO2
α
.098
.060
2.49
1.52
BW
.220
.290
5.59
7.37
6
.015
0.38
.320
8.13
9
0°
15°
0°
15°
BW1
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Index area: A notch or pin one identification mark shall be located adjacent to pin one and shall be
located within the shaded area shown. The manufacturer's identification shall not be used as a pin one
identification mark.
4. The minimum limit for dimension LW1 may be .023 inch (0.58 mm) for leads number 1, 7, 8, and 14 only.
5. Dimension LO2 shall be measured from the seating plane to the base plane.
6. This dimension allows for off-center lid, meniscus, and glass overrun.
7. The basic pin spacing is .100 inch (2.54 mm) between centerlines. Each pin centerline shall be located
within ± .010 inch (0.25 mm) of its exact longitudinal position relative to pins 1 and 14 (see figure 6).
8. Applies to all four corners (leads number 1, 7, 8, and 14).
9. Lead center when α is 0°. BW1 shall be measured at the centerline of the leads.
10. All leads.
11. Twelve spaces.
12. No organic or polymeric materials shall be molded to the bottom of the package to cover the
leads.
FIGURE 1. Dimensions and configuration for type 2N6989 - Continued.
4
MIL-PRF-19500/559E
FIGURE 2. Physical dimensions for type 2N6990.
5
MIL-PRF-19500/559E
Dimensions
Millimeters
Dimensions
Millimeters
Min Max
Symbol
Inches
Min
Notes
Symbol
Inches
Max
Notes
Max
.115
.019
.006
.280
.260
.290
Min
0.76
0.25
0.08
Max
2.92
0.48
0.15
7.11
6.60
7.37
Min
CH
LW
TL
.030
.010
.003
BW3
LS
LT
.030
0.76
7
7
5
.050 BSC
1.27 BSC
6, 8
12
.003
.006
.370
.040
0.076
0.152
9.40
1.02
BL
LL
.250
.005
.005
.004
30°
6.35
0.13
0.13
`0.10
30°
BW
LU
.240
.125
6.10
3.18
LD2
LO
LO3
α
4
9, 10
13
5
BW2
14
90°
90°
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Index area: A notch or pin one identification mark shall be located adjacent to pin one and shall be
located within the shaded area shown. The manufacturer's identification shall not be used as a pin one
identification mark. Alternatively, a tab (dim TL) may be used to identify pin one.
4. Dimension LD2 shall be measured at the point of exit of the lead from the body.
5. This dimension allows for off-center lid, meniscus, and glass overrun.
6. The basic pin spacing is .050 inch (1.25 mm) between centerlines. Each pin centerline shall be located
within ± .005 inch (0.13 mm) of its exact longitudinal position relative to pins 1 and 14.
7. All leads: Increase maximum limit by .003 inch (0.08 mm) measured at the center of the flat when the
lead finish is solder.
8. Twelve spaces.
9. Applies to all four corners (leads number 2, 6, 9, and 13).
10. Dimension LO may be .000 inch (0.00 mm if leads number 2, 6, 9, and 13) bend toward the cavity of the
package within one lead width from the point of entry of the lead into the body or if the leads are brazed
to the metallized ceramic body.
11. No organic or polymeric materials shall be molded to the bottom of the package to cover the leads.
12. Optional, see note 1. If a pin one identification mark is used in addition to this tab, the minimum limit of
dimension TL does not apply.
13. Applies to leads number 1, 7, 8, and 14.
14. Lead configuration is optional within dimension BW except dimensions LW and LT apply.
FIGURE 2. Physical dimensions for type 2N6990 - Continued.
6
MIL-PRF-19500/559E
Symbol
Dimensions
Inches
Millimeters
Min Max
Min
Max
.075
.355
.205
A
D
.063
.345
.195
1.60
8.76
4.95
1.90
9.02
5.21
D1
D2
D3
E
.050 TYP
.070
.025 REF
1.27 TYP
1.76
0.64 REF
.080
2.03
*
*
L1
.050 REF
1.27 REF
for pins 2 through 20
for pins 2 through 20
L2
.080 .090
2.03 2.28
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is ±.005 inch (0.13 mm)
FIGURE 3. Physical dimensions for type 2N6989U.
7
MIL-PRF-19500/559E
FIGURE 4. Schematic and terminal connections for type 2N6989 and 2N6990.
FIGURE 5. Schematic and terminal connections for type 2N6989U.
8
MIL-PRF-19500/559E
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500 and as follows.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Schematic and terminal connections. The schematic and terminal connections shall be as shown on figure
4 (for flat package and dual-in-line) and on figure 5 (for leadless chip carrier).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and
4.4.3 herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II, the tests specified in table II herein must be performed by the first inspection lot processed
to this revision to maintain qualification.
9
MIL-PRF-19500/559E
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see table
IV of
Measurement
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
*3c
Thermal impedance,
method 3131 of MIL-STD-750.
Thermal impedance,
method 3131 of MIL-STD-750.
9
I
CBO2, hFE4
48 hours minimum.
ICBO2; hFE4
Not applicable.
10
11
48 hours minimum.
ICBO2; hFE4
;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater.
∆hFE4 = +15 percent.
12
13
See 4.3.1
240 hours minimum.
See 4.3.1
80 hours minimum.
Subgroups 2 and 3 of table I herein;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
∆hFE4 = +15 percent.
Subgroup 2 of table I herein;
∆ICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
∆hFE4 = +15 percent.
* 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 V dc. Power shall be applied to
achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.2 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
MIL-STD-750, Method 3131.
a. IM measurement current---------------5 mA.
b. IH forward heating current ------------200 mA (min).
c. tH heating time --------------------------25 - 30 ms.
d. tmd measurement delay time -------60 µs max.
e. VCE collector-emitter voltage -------10 V dc minimum
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 72°C/W.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened
devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb, group B,
subgroup 1 is not required to be performed again if group B has already been satisfied per 4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
10
MIL-PRF-19500/559E
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-points) and
delta requirements shall be in accordance with group A, subgroup 2 and 4.5.5 herein. See 4.4.2.2 for JAN, JANTX,
and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and
JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.5 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup Method Condition
*
*
B4
B5
1037
1027
VCB = 10 - 30 V dc; TJ = +150°C, 2,000 cycles. No heat sink or forced-air cooling
on devices shall be permitted.
(note: If a failure occurs, resubmission shall be at the test conditions of the original
sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). 1/
Step
1
Method
1039
Condition
Steady-state life: Test condition B, 340 hours, VCB = 10 -30 V dc, TJ = +150°C min. No
heat sink or forced-air cooling on the devices shall be permitted. n = 45 devices, c = 0.
2
1039
The steady-state life test of step 1 shall be extended to 1,000 hrs for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot. n = 45,
c = 0.
3
1032
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
* 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and JANTXV)
herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with
group A, subgroup 2 and 4.5.5 herein, delta parameters apply to subgroup C6.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2
2036
Test condition E, 3 ounce weight; three bends of 15 degrees for 2N6990; three bends for
2N6989; not applicable to 2N6989U.
C6
1026
1,000 hours at VCB = 10 V dc; TJ = +150°C min. No heat sink or forced-air cooling on
device shall be permitted.
1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a
new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer
lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped.
11
MIL-PRF-19500/559E
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2
C6
2036
Test condition E, 3 ounce weight; three bends of 15 degrees for 2N6990; three bends
for 2N6989; not applicable to 2N6989U.
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) and delta measurements shall be in accordance with the applicable steps of table II and table I, group A,
subgroup 2 herein; except, ZθJX need not be performed.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Independent transistor inspections. Inspections shall be performed on each transistor in the array.
4.5.4 Transistor-to-transistor resistance. The leads of each transistor shall be shorted together for this test. The
resistance shall be measured between each transistor in the array.
4.5.5 Delta requirements. Delta requirements shall be as specified below:
Step
1
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3036
Collector-base cutoff
current.
Bias condition D,
CB = 60 V dc.
100 percent of initial
value or 8 nA dc,
∆ICB02 1/
V
whichever is greater.
2
Forward current
transfer ratio.
3076
VCE = 10 V dc;
IC = 150 mA dc;
pulsed see 4.5.1.
25 percent change
from initial reading.
∆hFE4 1/
1/ Devices which exceed the group A limits for this test shall not be accepted.
12
MIL-PRF-19500/559E
TABLE I. Group A inspection
Inspection 1/
MIL-STD-750
Conditions
Limit
Unit
Symbol
Method
2071
Min
Max
Subgroup 1 2/
Visual and mechanical 3/
examination
n = 45 devices, c = 0.
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0.
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0.
Temp cycling 3/ 4/
Heremetic seal 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0.
n = 22 devices, c = 0.
Fine leak
Gross leak
Electrical measurements 4/
Bond strength 3/ 4/
Group A, subgroup 2.
2037
2075
Precondition TA = +250°C at
t = 24 hrs or TA = +300°C at
t = 2 hrs n = 11 wires, c = 0.
Decap internal visual design
verification 4/
n = 4, c = 0.
Subgroup 2
Collector to base cutoff
current
3036
3061
10
10
µA dc
µA dc
Bias condition D; VCB = 75 V dc
IC = 10 µA dc.
ICBO1
Emitter to base cutoff
current
Bias condition D; VEB = 6 V dc
IE = 10 µA dc.
IEBO1
Breakdown voltage, collector
to emitter
3011
3036
3061
3076
3076
3076
Bias condition D; IC = 10 mA dc;
pulsed (see 4.5.1).
50
V dc
nA dc
nA dc
V(BR)CEO
ICBO2
IEBO2
hFE1
Collector to base cutoff
Current
Bias condition D; VCB = 60 V dc.
Bias condition D; VEB = 4 V dc.
10
10
Emitter to base cutoff
current
Forward-current transfer
ratio
VCE = 10 V dc; IC = 0.1 mA dc.
50
75
Forward-current transfer
ratio
VCE = 10 V dc; IC = 1.0 mA dc.
VCE = 10 V dc; IC = 10 mA dc.
325
hFE2
Forward-current transfer
ratio
100
hFE3
See footnotes at end of table.
13
MIL-PRF-19500/559E
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Limit
Unit
Symbol
Method
Conditions
Min
100
30
Max
300
Subgroup 2 - Continued
Forward-current transfer ratio
3076
3076
3071
3071
3066
VCE = 10 V dc; IC = 150 mA dc;
pulsed (see 4.5.1).
hFE4
Forward-current transfer ratio
VCE = 10 V dc; IC = 500 mA dc;
pulsed see 4.5.1.
hFE5
Collector-emitter saturation
voltage
0.3
1.0
1.2
V dc
V dc
V dc
IC = 150 mA dc; IB = 15 mA dc
pulsed (see 4.5.1).
VCE(sat)1
VCE(sat)2
VBE(sat)1
Collector-emitter saturation
voltage
IC = 500 mA dc; IB = 50 mA dc;
pulsed (see 4.5.1).
Base-emitter saturation voltage
0.6
Test condition A; IC = 150 mA dc;
IB = 15 mA dc; pulsed (see 4.5.1).
Base-emitter saturation voltage
3066
2.0
V dc
Test condition A; IC = 500 mA dc;
IB = 50 mA dc; pulsed (see 4.5.1).
VBE(sat)2
Subgroup 3
High temperature operation
Collector to base cutoff current
Low temperature operation
Forward-current transfer ratio
Subgroup 4
TA = +150°C
3036
3076
10
µA dc
Bias condition D;VCB = 60 V dc.
TA = -55°C.
ICBO3
35
VCE = 10 V dc; IC = 10 mA dc.
hFE6
Small-signal short-circuit
forward current transfer ratio
3206
3306
50
VCE = 10 V dc; IC = 1 mA dc; f = 1 kHz.
hfe
Magnitude of small-signal short-
circuit forward current transfer
ratio
2.5
10.0
VCE = 10 V dc; IC = 20 mA dc;
f = 100 MHz.
|hfe|
Open circuit Output capacitance
3236
3240
8
pF
pF
VCB = 10 V dc; IE = 0;
100 kHz < f < 1 MHz.
Cobo
Input capacitance (output open-
circuited)
25
VEB = 0.5 V dc; IC = 0;
100 kHz < f < 1 MHz (see 4.5.2).
Cibo
Turn-on time
Turn-off time
(See figure 6)
35
ns
ns
Ω
ton
toff
(See figure 7)
300
| VT-T | = 500 V dc; see 4.5.4.
RT-T
1010
Transistor-to-transistor
resistance
See footnotes at end of table.
14
MIL-PRF-19500/559E
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Limit
Unit
Symbol
Method
Conditions
Min
Max
Subgroups 5 and 6
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure
in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
15
MIL-PRF-19500/559E
TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles.
45 devices
c = 0
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See group A, subgroup 2 and 4.5.5 herein.
*Intermittent life
1037
45 devices
c = 0
VCB = 10 - 30 V dc, 6,000 cycles.
Electrical measurements
*Subgroup 3, 4, 5, 6 and 7
Not applicable
See group A, subgroup 2 and 4.5.5 herein.
*Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ≥ 400 V dc.
Condition B for devices < 400 V dc.
16
MIL-PRF-19500/559E
NOTES:
1 The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 2.0 ns; duty cycle ≤ 2
percent; generator source impedance shall be 50 Ω.
2. Output sampling oscilloscope: Zin ≥ 100 kΩ; Cin ≤ 12 pF; rise time ≤ 5.0 ns.
FIGURE 6. Saturated turn-on switching time test circuit.
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be each ≤ 2.0 ns; duty cycle ≤ 2
percent; generator source impedance shall be 50 Ω.
2. Output sampling oscilloscope: Zin ≥ 100 kΩ; Cin ≤ 12 pF; rise time ≤ 5.0 ns.
FIGURE 7. Saturated turn-off switching time test circuit.
17
MIL-PRF-19500/559E
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2507)
Review activities:
Navy - AS, MC
Army - AR, MI, SM
Air Force - 19, 99
18
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/559E
2. DOCUMENT DATE
9 July 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, UNITIZED, NPN, SILICON, SWITCHING, FOUR TRANSISTOR ARRAY
TYPES 2N6989, 2N6989U, AND 2N6990, JAN, JANTX, JANTXV, AND JANS.
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
850-0510
FAX
614-692-6939
EMAIL
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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