JANTXV2N7219U [INFINEON]
Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN;型号: | JANTXV2N7219U |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 18A I(D), 200V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN 开关 脉冲 晶体管 |
文件: | 总24页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 June 2013.
MIL-PRF-19500/596K
17 April 2013
SUPERSEDING
MIL-PRF-19500/596J
14 April 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
TRANSISTOR, N-CHANNEL, SILICON,
TYPES 2N7218, 2N7219, 2N7221, 2N7222, 2N7218U, 2N7219U,
2N7221U, AND 2N7222U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a N-channel, enhancement mode,
MOSFET, power transistor intended for use in high density power switching applications. Four levels of product
assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy maximum
ratings (EAR and EAS) and maximum avalanche current IAR. Two levels of product assurance are provided for die
(element evaluation).
1.2 Physical dimensions. See figure 1 (TO-254AA), figure 2 for JANHC and JANKC (die) dimensions, and figure 3
for surface mount (TO-267AB).
1.3 Maximum ratings. Unless otherwise specified, TC = +25°C.
Type
PT (1)
PT
V(BR)DSS min ID1 (3) (4) ID2 (3) (4)
IS
IDM
(5)
TJ
Rθ
JC
TC =
+25°C
W
TA =
+25°C
W
(2)
VGS = 0
ID = 1.0 mA dc
V dc
TC =
+25°C
A dc
TC =
+100°C
A dc
and
TSTG
°C
A dc A (pk)
°C/W
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
125
125
125
125
4
4
4
4
100
200
400
500
28
18
10
8
20
11
6
28
18
10
8
112
72
40
1.0
1.0
1.0
1.0
-55 to +150
-55 to +150
-55 to +150
-55 to +150
5
32
See notes next page.
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at https://assist.dla.mil/.
*
AMSC N/A
FSC 5961
MIL-PRF-19500/596K
1.3 Maximum ratings - continued.
rDS(on) max (6)
VGS = 10 V dc
ID = ID2
Type
IAR
EAS
EAR
V(ISO)
at 70,000
feet
VGS
TJ = +25°C
TJ = +150°C
A
mj
mj
V dc
Ω
Ω
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
28
18
10
8
250
450
650
700
12.5
12.5
12.5
12.5
±20
±20
±20
±20
0.077
0.18
0.55
0.85
0.154
0.387
1.32
400
500
2.04
(1) Derate linearly 1.0 W/°C for TC > +25°C.
(2) See figure 4, thermal impedance curves.
(3) The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires
and may be limited by pin diameter:
max-
T J
)x(
TC
at
=
I D
(
)
RΘJC
RDS(ON ) T Jmax
(4) See figure 5, maximum drain current graph.
(5) IDM = 4 x ID1 as calculated in note 3.
(6) Pulsed (see 4.5.1).
1.4 Primary electrical characteristics. TC = +25°C (unless otherwise specified).
Max IDSS1
VGS = 0
VDS = 80 percent
of rated VDS
Max rDS(on)1
(1)
ID = ID2
Type
Min V(BR)DSS
VGS = 0
ID = 1.0 mA dc
VGS(th)1
VDS ≥ VGS
ID = 0.25 mA dc
VGS = 10 V
V dc
V dc
Ohms
µA dc
Min
2.0
2.0
2.0
2.0
Max
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
100
200
400
500
4.0
4.0
4.0
4.0
25
25
25
25
0.077
0.18
0.55
0.85
(1) Pulsed (see 4.5.1).
2
MIL-PRF-19500/596K
Dimensions
Millimeters
Notes
Ltr
Inches
Min
Max
.545
.260
.045
.570
Min
13.59
6.32
Max
13.84
6.60
BL
CH
LD
.535
.249
.035
.510
0.89
1.14
LL
12.95
14.48
3
LO
.150 BSC
.150 BSC
.139
3.81 BSC
3.81 BSC
LS
MHD
MHO
TL
.149
.685
.800
.050
.545
3.53
3.78
17.40
20.32
1.27
.665
.790
.040
.535
16.89
20.07
1.02
3, 4
3, 4
TT
TW
13.59
13.84
Term
1
Drain
Term
2
Source
Gate
Term
3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Protrusion thickness of ceramic eyelets included in dimension LL.
4. All terminals are isolated from case.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions for TO-254AA (2N7218, 2N7219, 2N7221, and 2N7222).
3
MIL-PRF-19500/596K
Dimensions
Inches
Symbol
Millimeters
Min
.620
.445
Max
.630
.455
.142
.020
.420
.162
Min
15.75
11.30
Max
16.00
11.56
3.60
0.50
10.67
4.11
BL
BW
CH
LH
LL1
.010
.410
.152
0.26
10.41
3.86
LL2
LS1
LS2
LW1
LW2
Q1
.210 BSC
.105 BSC
.370
.135
.030
.035
5.33 BSC
2.67 BSC
.380
.145
9.40
3.43
0.76
0.89
9.65
3.68
Q2
Term 1
Term 2
Term 3
Drain
Gate
Source
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for information only.
3. The lid shall be electrically isolated from the drain, gate and source.
4. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 2. Dimensions and configuration of surface mount package outline (TO-267AB), 2N7218U, 2N7219U,
2N7221U, and 2N7222U.
4
MIL-PRF-19500/596K
Inches
.018
.020
.025
.027
.029
mm
0.46
0.51
0.64
0.69
0.74
Inches
.037
.042
.049
.060
.063
mm
0.94
1.07
1.24
1.52
1.60
Inches
.162
.170
.192
.219
.227
mm
4.11
4.32
4.88
5.56
5.77
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Unless otherwise specified, tolerance is ±.005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .0187 inch (0.475 mm). The back metals
are chromium, nickel, and silver. The top metal is aluminum and the back contact is the drain.
5. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
6. See 6.4 for ordering information.
FIGURE 3. JANHC and JANKC (A-version) die dimensions.
5
MIL-PRF-19500/596K
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 Test Methods for Semiconductor Devices.
-
Semiconductor Devices, General Specification for.
-
*
(Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or https://assist.dla.mil/ or
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list before
contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1 (TO-254AA), 2 (TO-267AB, surface mount), and 3 (die) herein. Methods used for
electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3
(ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages.
3.4.1 Lead formation and finish. Lead finish shall be solderable in accordance with MIL-PRF-19500,
MIL-STD-750, and herein. Where a choice of lead formation or finish is desired, it shall be specified in the acquisition
document (see 6.2). When lead formation is performed, as a minimum, the vendor shall perform 100 percent
hermetic seal in accordance with screen 14 of table E-IV of MIL-PRF-19500 and 100 percent dc testing in
accordance with table I, subgroup 2 herein.
6
MIL-PRF-19500/596K
3.4.2 Internal construction. Multiple chip construction shall not be permitted.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation
of static charge. The following handling procedures shall be followed:
a. Devices shall be handled on benches with conductive handling devices.
b. Ground test equipment, tools, and personnel handling devices.
c. Do not handle devices by the leads.
d. Store devices in conductive foam or carriers.
e. Avoid use of plastic, rubber, or silk in MOS areas.
f. Maintain relative humidity above 50 percent, if practical.
g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to
any lead.
h. Gate must be terminated to source. R ≤ 100 kΩ, whenever bias voltage is to be applied drain to source.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500, except at the option of the manufacturer, the
country of origin and/or the manufacturers identification may be omitted from the body of the transistor.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4 and tables I and II).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein.
4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
7
MIL-PRF-19500/596K
4.3 Screening (JANS, JANTX, and JANTXV levels). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table E-IV of
MIL-PRF-19500)
(1) (2)
Measurement
JANS level
JANTX and JANTXV level
(3)
(3)
Gate stress test (see 4.3.2)
Gate stress test (see 4.3.2)
Method 3470 of MIL-STD-750. (see 4.3.3)
Method 3161 of MIL-STD-750 (see 4.3.4)
Method 3470 of MIL-STD-750. (see 4.3.3)
Method 3161 of MIL-STD-750 (see 4.3.4)
Subgroup 2 of table I herein
(3) 3c
9
IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
herein;
10
11
Method 1042 of MIL-STD-750, test condition Method 1042 of MIL-STD-750, test condition
B
B
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
Subgroup 2 of table I herein.
∆IGSSF1 = +20 nA dc or ±100 percent of initial
value, whichever is greater.
∆IGSSR1 = -20 nA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
12
13
Method 1042 of MIL-STD-750, test condition Method 1042 of MIL-STD-750, test condition
A
A or TA = +175°C and t = 48 hours
Subgroup 2 and 3 of table I herein.
Subgroup 2 of table I herein.
∆IGSSF1 = +20 nA dc or ±100 percent of initial ∆IGSSF1 = +20 nA dc or ±100 percent of initial
value, whichever is greater. value, whichever is greater.
∆IGSSR1 = -20 nA dc or ±100 percent of initial ∆IGSSR1 = -20 nA dc or ±100 percent of initial
value, whichever is greater.
value, whichever is greater.
∆IDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
∆IDSS1 = ±25 µA dc or ±100 percent of initial
value, whichever is greater.
∆rDS(on)1 = ±20 percent of initial value.
∆VGS(th)1 = ±20 percent of initial value.
∆rDS(on)1 = ±20 percent of initial value.
∆VGS(th)1 = ±20 percent of initial value.
*
*
17
Method 1081 of MIL-STD-750 (see 4.3.5)
Endpoints: Subgroup 2 of table I herein
Method 1081 of MIL-STD-750 (see 4.3.5)
Endpoints: Subgroup 2 of table I herein
(1) At the end of the test program, IGSSF1, IGSSR1, and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1, and VGS(th)1 shall be invoked.
(3) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to
be repeated in screening requirements.
8
MIL-PRF-19500/596K
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a
minimum die, shall be 100 percent probed in accordance with table I, subgroup 2 except test current shall not exceed
20 amperes.
4.3.2 Gate stress test. Apply VGS = 30 V minimum for t = 250 µs minimum.
4.3.3 Single pulse avalanche energy (EAS).
a. Peak current (IAS)............................................ID1.
b. Peak gate voltage (VGS)..................................10 V.
c. Gate to source resistor (RGS)..........................25 ≤ RGS ≤ 200 Ω.
d. Initial case temperature ..................................+25°C +10°C, -5°C.
V
− V
e. Inductance:.....................................................
mH minimum.
DD
2EAS
BR
2
VBR
I
D1
f. Number of pulses to be applied.......................1 pulse minimum.
g. Supply voltage (VDD).......................................50 V, 25 V for 100 V devices.
4.3.4 Thermal impedance. The thermal impedance measurements shall be performed in accordance with method
3161 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tSW, (and VH where appropriate).
Measurement delay time (tMD) = 30 - 60 µs max. See table II, group E, subgroup 4 herein.
4.3.5 Dielectric withstanding voltage.
*
a. Magnitude of test voltage…………………………………900V DC
b. Duration of application of test voltage…………………..15 seconds (min)
c. Points of application of test voltage………………………All leads to case (bunch connection)
d. Method of connection………………………………………Mechanical
e. Kilovolt-ampere rating of high voltage source…………..1200V/1.0 mA (min)
f. Maximum leakage current………………………………….1.0 mA
g. Voltage ramp up time……………………………………….500V/second
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein.
Electrical measurements (end-points) shall be in accordance with the inspections of table I, subgroup 2 herein.
9
MIL-PRF-19500/596K
*
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
B3
Method
1051
Conditions
Test condition G.
*
B4
1042
Test condition D; the heating cycle shall be 1 minute minimum. No
heat sink or forced air cooling on the device shall be permitted during the cycle.
B5
1042
A separate sample may be pulled for each test. Accelerated steady-state reverse
bias, test condition A, VDS = rated, TA = +175°C, t = 120 hours, read and record
V(BR)DSS (pre and post at 1 mA = ID. Read and record IDSS (pre and post). Deltas for
V
(BR)DSS shall not exceed 10 percent and IDSS shall not exceed 25 µA.
Accelerated steady-state gate bias, condition B, VGS = rated, TA = +175°C,
t = 24 hours.
B5
2037
Bond strength; test condition D.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
B2
Method
1051
Condition
Test condition G.
B3
1042
Test condition D, 2,000 cycles minimum. The heating cycle shall be 1 minute
minimum.
*
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in
accordance with the inspections of table I, subgroup 2 herein.
Subgroup
C2
Method
2036
Condition
Tension: Test condition A; weight = 10 lbs, t = 10 s (not applicable to "U" suffix
version).
C5
3161
1042
See 4.3.4, RθJC(max) shall be 1.0°C/W.
*
C6
Test condition D. The heating cycle shall be 1 minute minimum.
4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall
be in accordance with table I, subgroup 2.
4.5 Methods of inspection. Methods of inspection shall be as specified in appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in MIL-STD-750.
10
MIL-PRF-19500/596K
TABLE I. Group A inspection.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
2071
Condition
Min
Max
Subgroup 1
Visual and mechanical
inspection
Subgroup 2
Thermal impedance 2/
3161
3407
See 4.3.4
Z θ
°C/W
JC
Breakdown voltage,
drain to source
Bias condition C, VGS = 0 V, ID =
1 mA dc
V (BR)DSS
2N7218, 2N7218U
100
200
400
500
V dc
V dc
V dc
V dc
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
Gate to source voltage
(threshold)
3403
3411
3411
3413
3421
VGS(th)1
IGSSF1
IGSSR1
IDSS1
2.0
4.0
100
-100
25
V dc
nA dc
nA dc
µA dc
VDS ≥ VGS, ID = .25 mA
Gate current
Gate current
Drain current
Bias condition C, VGS = 20 V dc,
VDS = 0
Bias condition C, VGS = -20 V dc,
VDS = 0
Bias condition C, VGS = 0, VDS
80 percent of rated VDS
=
Static drain to source
on-state resistance
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
VGS = 10 V dc, condition A, pulsed
(see 4.5.1), ID = rated ID2 (see 1.3)
rDS(on)1
0.077
0.18
0.55
0.85
Ω
Ω
Ω
Ω
Static drain to source
on-state resistance
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
3421
VGS = 10 V dc, condition A, pulsed
(see 4.5.1), ID = rated ID1 (see 1.3)
rDS(on)2
0.125
0.25
0.70
0.95
Ω
Ω
Ω
Ω
See footnotes at end of table.
11
MIL-PRF-19500/596K
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
4011
Condition
Min
Max
Subgroup 2 - Continued
Forward voltage (source
drain diode)
VGS = 0, ID = rated ID1, pulsed (see
4.5.1)
VSD
1.5
V
Subgroup 3
High temperature
operation:
TC = TJ = +125°C
Gate current
Gate current
Drain current
Drain current
3411
3411
3413
3413
3403
3421
Bias condition C,
VGS = 20 V dc, VDS = 0
IGSSF2
IGSSR2
IDSS2
200
-200
1.0
nA dc
nA dc
mA dc
mA dc
V dc
Bias condition C,
VGS = -20 V dc, VDS = 0
Bias condition C, VGS = 0, VDS
100 percent of rated VDS
=
=
Bias condition C, VGS = 0, VDS
80 percent of rated VDS
IDSS3
0.25
Gate to source voltage
(threshold)
VGS(th)2
1.0
VDS ≥ VGS, ID = 0.25 mA
Static drain to source
on-state resistance
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
VGS = 10 V dc, pulsed (see 4.5.1),
ID = rated ID2 (see 1.3)
rDS(on)3
0.24
0.48
1.44
2.04
Ω
Ω
Ω
Ω
Low temperature
operation:
TC = TJ = -55°C
Gate to source voltage
(threshold)
3403
VGS(th)3
5.0
V dc
VDS ≥ VGS, ID = 0.25 mA
See footnotes at end of table.
12
MIL-PRF-19500/596K
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
3472
Condition
Min
Max
Subgroup 4
Switching time test
ID = rated ID2 (see 1.3), VGS = 10 V
dc, gate drive impedance = 9.1 Ω,
VDD = 50 percent of VBR(DSS)
Turn-on delay time
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
td(on)
21
20
25
21
ns
ns
ns
ns
Rise time
tr
2N7218, 2N7218U
105
105
92
ns
ns
ns
ns
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
73
Turn-off delay time
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
td(off)
64
58
79
72
ns
ns
ns
ns
Fall time
tf
2N7218, 2N7218U
65
67
58
51
ns
ns
ns
ns
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
Subgroup 5
Safe operating area test
(high voltage)
3474
See figure 6; tp = 10 ms, VDS = 80
percent of rated VBR(DSS), VDS
200 V maximum
=
Electrical
See table I, subgroup 2
measurements
Subgroup 6
Not applicable
See footnotes at end of table.
13
MIL-PRF-19500/596K
TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection
1/
Limits
Symbol
Unit
Method
3471
Condition
Min
Max
Subgroup 7
Gate charge
Condition B
On-state gate charge
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
Qg(on)
59
60
65
nC
nC
nC
nC
68.5
Gate to source charge
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
Qgs
16
nC
nC
nC
nC
14.6
14.0
12.5
Gate to drain charge
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
Qgd
30.7
37.6
40.5
42.4
nC
nC
nC
nC
Reverse recovery time
3473
trr
di/dt ≤ 100 A/µs, VDD ≤ 30 V,
ID = ID1, (see 1.3)
2N7218, 2N7218U
2N7219, 2N7219U
2N7221, 2N7221U
2N7222, 2N7222U
400
500
600
700
ns
ns
ns
ns
1/ For sampling plan, see MIL-PRF-19500.
2/ This test required for the following end-point measurements only:
Group B, subgroups 3 and 4 (JANS).
Group B, subgroups 2 and 3 (JANTXV).
Group C, subgroups 2 and 6.
Group E, subgroup 1.
14
MIL-PRF-19500/596K
*
TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only.
Inspection
MIL-STD-750
Conditions
Sample
plan
Method
Subgroup 1
45 devices
c = 0
Temperature cycling
1051
1071
-55 to 150°C, 500 cycles
Hermetic seal
Fine leak
As applicable.
*
Gross leak
Electrical measurements
Subgroup 2 1/
See table I, subgroup 2
45 devices
c = 0
Steady-state reverse bias
Electrical measurements
Steady-state gate bias
Electrical measurements
Subgroup 4
1042
1042
Condition A, 1,000 hours
See table I, subgroup 2
Condition B, 1,000 hours
See table I, subgroup 2
Sample size
N/A
Thermal impedance curves
Subgroup 5 2/
See MIL-PRF-19500.
3 devices
c = 0
Barometric pressure test
2N7221, 2N7221U
1001
3476
Condition C, V(ISO) = VDS
VDS = 400 V dc
VDS = 500 V dc
2N7222, 2N7222U
Subgroup 10
22 devices
c = 0
Commutating diode for safe
operating area test procedure
for measuring dv/dt during
reverse recovery of power
MOSFET transistors or
insulated gate bipolar
transistors
Test conditions shall be derived by the
manufacturer.
See footnotes at end of table.
15
MIL-PRF-19500/596K
TABLE II. Group E inspection (all quality levels) for qualification or re-qualification only - Continued.
Inspection
MIL-STD-750
Conditions
Sample
plan
Method
3469
Subgroup 11
5 devices
c = 0
Repetitive avalanche energy
Peak current IAR = ID;
peak gate voltage VGS = 10 V;
gate to source resistor, RGS 25 ≤ RGS ≤ 200
ohms
Temperature = TJ = +150°C +0, -10°C
Inductance =
V
− V
DD mH minimum
2EAR
BR
2
VBR
I
D1
Number of pulses to be applied = 3.6 X 108;
supply voltage (VDD) = 50 V, time in
avalanche = 2 µs min., 20 µs max.
frequency = 500 Hz minimum.
Electrical measurements
See table I, subgroup 2
1/ A separate sample for each test may be pulled.
2/ Not required for 2N7218, 2N7218U, 2N7219, and 2N7219U.
16
MIL-PRF-19500/596K
FIGURE 4. Thermal impedance.
17
MIL-PRF-19500/596K
FIGURE 5. Maximum drain current versus case temperature graphs.
18
MIL-PRF-19500/596K
FIGURE 6. Safe operating area.
19
MIL-PRF-19500/596K
FIGURE 6. Safe operating area - Continued.
20
MIL-PRF-19500/596K
FIGURE 6. Safe operating area - Continued.
21
MIL-PRF-19500/596K
FIGURE 6. Safe operating area - Continued.
22
MIL-PRF-19500/596K
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Intended use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead formation and finish (see 3.4.1).
d. Product assurance level and type designator.
* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail
vqe.chief@dla.mil. An online listing of products qualified to this specification may be found in the Qualified Products
Database (QPD) at http://assist.dla.mil .
6.4 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example
JANHCA2N7218) will be identified on the QML.
JANC ordering information
Manufacturer
Military PIN
59993
59993
2N7218
2N7219
2N7221
2N7222
JANHCA2N7218
JANHCA2N7219
JANHCA2N7221
JANHCA2N7222
JANKCA2N7218
JANKCA2N7219
JANKCA2N7221
JANKCA2N7222
23
MIL-PRF-19500/596K
6.5 Substitution information. Devices covered by this specification are substitutable for the manufacturer's and
user's Part or Identifying Number (PIN). This information in no way implies that manufacturer's PIN's are suitable as
a substitute for the military PIN.
Military PIN
2N7218
Manufacturer's CAGE
59993
Manufacturer's and user's PIN
IRFM 140
2N7219
59993
IRFM 240
2N7221
59993
IRFM 340
2N7222
59993
IRFM 440
2N7218U
2N7219U
2N7221U
2N7222U
59993
IRFN 140
59993
IRFN 240
59993
IRFN 340
59993
IRFN 440
6.6 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 85
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2013-005)
Review activities:
Army - MI, SM
Navy - AS, MC
Air Force - 19
NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil/ .
*
24
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