FT0814DD00TR [ETC]
SURFACE MOUNT TRIAC; 表面贴装TRIAC
| 型号： | FT0814DD00TR |
| 厂家： | 
ETC |
| 描述： | SURFACE MOUNT TRIAC |
| 文件： | 总5页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FT08...D
SURFACE MOUNT TRIAC
DPAK
(Plastic)
On-State Current
8 Amp
Gate Trigger Current
< 5 mA to < 50 mA
Off-State Voltage
200 V ÷ 600 V
MT2
MT1
This series of TRIACs uses a high performance
MT2
G
PNPN technology.
These devices are intended for AC control
applications using surface mount technology.
The high commutation performances combined with
high sensitivity, make them perfect in all applications
like solid state relays, home appliances, power tools,
small motor drives...
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL
PARAMETER
RMS On-state Current
CONDITIONS
Min.
Max.
Unit
All Conduction Angle, TC = 110 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
tp = 10 ms, Half Cycle
20 µs max.
8
A
A
IT(RMS)
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
84
80
36
ITSM
ITSM
I2t
A
A2s
IGM
Peak Gate Current
4
10
1
A
PGM
PG(AV)
di/dt
Peak Gate Dissipation
20 µs max.
W
Gate Dissipation
20 ms max.
W
IG = 2 x IGT
Tr £ 100 ns, F = 120 Hz
Critical rate of rise of on-state current
50
A/µs
Tj = 125 ºC
Tj
Tstg
TL
Operating Temperature Range
Storage Temperature Range
Lead Temperature for soldering
-40
-40
+125
+150
260
ºC
ºC
ºC
10s max.
SYMBOL
PARAMETER
VOLTAGE
Unit
V
B
D
M
Repetitive Peak Off State
Voltage
200
400
600
VDRM
VRRM
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
Electrical Characteristics
Quadrant
Unit
SYMBOL
PARAMETER
CONDITIONS
SENSITIVITY
14 16
07 08 11
(1)
35 50
Q1÷Q3 MAX
5
7
10 25
mA
mA
mA
µA
V
IGT
Gate Trigger Current
VD = 12 VDC , RL = 30W
Tj = 25 ºC
Tj = 125 ºC
Tj = 25 ºC
IDRM /IRRM
VR = VRRM ,
1
5
MAX
MAX
Off-State Leakage Current
(2)
Vto
Tj = 125 ºC
Tj = 125 ºC
0.85
Threshold Voltage
Dynamic Resistance
On-state Voltage
MAX
(2)
Rd
MAX
60
1.55
1.3
mW
V
(2)
VTM
IT = 11 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 VDC , RL = 30W, Tj = 25 ºC
VD = VDRM , RL = 3.3KW, Tj = 125 ºC
IT = 100 mA , Gate open, Tj = 25 ºC
IG = 1.2 IGT, Tj = 25 ºC
MAX
VGT
VGD
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Q1÷Q3 MAX
Q1÷Q3 MIN
MAX
V
0.2
V
(2)
IH
IL
35 50
50 80
60 80
400 250
10 15 25
mA
mA
Latching Current
Q1,Q3 MAX
10 20
25
Q2
MAX
MIN
15 30 50
20 100 200
VD = 0.67 x VDRM
,
Gate open
(2) Critical Rate of Voltage Rise
dv / dt
V/µs
T
j = 125 ºC
(2)
MIN
MIN
MIN
9
9
A/ms
3.5 5.4
9
(dv/dt)c= 0.1 V/µs
(dv/dt)c= 10 V/µs
without snubber
Tj = 125 ºC
Tj = 125 ºC
Tj = 125 ºC
(dI/dt)c
Critical Rate of Current Rise
4.5 4.5
4.5 4.5
1.8 2.8 4.5
-
-
-
Rth(j-c)
Thermal Resistance
Junction-Case
ºC/W
ºC/W
1.6
Thermal Resistance
Junction-Ambient
70
Rth(j-a)
(1) Minimum IGT is guaranted at 5% of IGT max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PART NUMBER INFORMATION
F
T
08
08
B
D
00 TR
FAGOR
SCR
PACKAGING
FORMING
CASE
VOLTAGE
CURRENT
SENSITIVITY
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
Fig. 1a: Maximum power dissipation versus
RMS on-state current (FT0807.D, FT0808.D).
Fig. 1b: Maximum power dissipation versus
RMS on-state current (FT0811.D, FT0814.D).
P (W)
P (W)
10
10
a = 180 º
a = 180 º
8
8
a = 120 º
a = 120 º
6
4
2
0
a = 90 º
6
4
2
0
a = 90 º
a = 60 º
a = 60 º
a = 30 º
a = 30 º
180 º
180 º
a
a
a
a
I
(A)
I
(A)
T(RMS)
T(RMS)
0
1
2
3
4
5
6
7
8
1
3
4
5
6
7
8
0
2
Fig. 2: Correlation between maximum power dissipation
and maximum allowable temperatures (Tamb and Tcase)
for different thermal resistances heatsink + contact.
Fig. 3: RMS on-state current versus ambient
temperature
P (W)
T case (ºC)
-110
I
(A)
T(RMS)
9
8
7
6
5
4
3
2
1
0
10
8
Rth=10 ºC/W
Rth=5 ºC/W
Rth(j-a) = Rth(j-c)
Rth=0 ºC/W
-115
6
a = 180 º
Rth=15 ºC/W
4
Rth(j-a) = 55 ºC/W
S(Cu) = 1.75 cm
-120
2
2
a = 180 º
Tamb (ºC)
-125 Tamb (ºC)
0
50
75
100
125
0
25
50
75
100 125
0
25
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 5: Relative variation of gate trigger current
and holding current versus junction temperature
(typical values).
K = [Zth(j-c) / Rth (j-c)]
1.0
I
, I (Tj) / I , I (Tj = 25 ºC)
GT
H
GT H
2.5
2.0
1.5
1.0
0.5
0.0
0.5
0.2
I
GT
I
H
tp (s)
Tj (ºC)
0.1
1E-3
1E-2
1E-1
1E+0
-40 -20
0
20 40 60 80 100 120 140
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp < 10 ms, and corresponding value of I2t.
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
I
(A). I2t (A2s)
TSM
I
(A)
TSM
500
80
70
60
50
40
30
20
10
0
Tj initial = 25 ºC
Tj initial = 25 ºC
F = 50 Hz
I
TSM
100
I2
t
Number of cycles
tp(ms)
10
1
10
100
1000
2
5
1
10
Fig. 8: On-state characteristics (maximum
values).
Fig. 9:Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35 µm).
R
(ºC/W)
I
(A)
TM
th(j-a)
100
80
60
40
20
0
100.0
10.0
Tj max
Tj = Tj max.
Vto = 0.8V
Rd = 60 mW
Tj = 25 ºC
1.0
0.1
2
)
S(Cu) (cm
V
(V)
TM
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
2
4
6
8 10 12 14 16 18 20
Jun - 02
FT08...D
SURFACE MOUNT TRIAC
DPAK TO 252-AA
PACKAGE MECHANICAL DATA
DIMENSIONS
REF.
Milimeters
Nominal
2.3 0.18
0.12
2º
8º
Min.
2.18
0
0.64
0.46
0.46
Max.
2.39
0.127
0.89
0.61
0.56
A
A1
b
0.75 0.1
A
ø1x0.15
E1
c2
E
c
c1
c2
D
D1
E
E1
e
H
L3
2º
2º
8º
8º
0.8 0.013
6.1 0.1
D1
5.97
5.21
6.35
5.20
6.22
5.52
6.73
5.46
D
H
6.58 0.14
5.36 0.1
2.28BSC
9.90 0.15
1.6
L4
2º
2º
8º
8º
L
9.40
1.40
2.55
0.46
0.89
0.64
10.41
1.78
2.74
0.58
1.27
1.02
e
b
L2
A1
4.57 Typ.
L
0.013
1.067
L1
L2
L3
L4
2.6 0.05
0.5 0.013
1.20 0.05
0.83 0.1
Marking: type number
Weight: 0.2 g
FOOT PRINT
6.7
6.7
3
3
1.6
1.6
2.3
2.3
Jun - 02
相关型号：
©2020 ICPDF网 联系我们和版权申明