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FT0816BI [ETC]

High Commutation TRIACs ; 高换向双向可控硅\n
FT0816BI
型号： FT0816BI
厂家： ETC    ETC
描述：

High Commutation TRIACs
高换向双向可控硅\n

可控硅 三端双向交流开关
文件： 总4页 (文件大小：141K)
中文：  中文翻译
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FT08...I  
HIGH COMMUTATION TRIAC  
IPAK  
(Plastic)  
On-State Current  
Gate Trigger Current  
8 Amp  
< 25 mA to < 50 mA  
Off-State Voltage  
200 V ÷ 600 V  
MT2  
This series of TRIACs uses a high performance  
PNPN technology.  
MT1  
MT2  
These devices are intended for AC control  
applications using surface mount technology.  
G
The high commutation performances combined with  
high sensitivity, make them perfect in all applications  
like solid state relays, home appliances, power tools,  
small motor drives...  
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
RMS On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
All Conduction Angle, TC = 110 ºC  
Half Cycle, 60 Hz  
8
A
A
IT(RMS)  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
84  
80  
36  
ITSM  
ITSM  
I2t  
Half Cycle, 50 Hz  
A
A2s  
tp = 10 ms, Half Cycle  
20 µs max.  
IGM  
Peak Gate Current  
4
10  
1
A
PGM  
PG(AV)  
di/dt  
Peak Gate Dissipation  
20 µs max.  
W
Gate Dissipation  
20 ms max.  
W
IG = 2 x IGT Tr £ 100 ns, F = 120 Hz  
Tj = 125 ºC  
Critical rate of rise of on-state current  
20  
A/µs  
Operating Temperature Range  
Storage Temperature Range  
Lead Temperature for soldering  
-40  
-40  
+125  
+150  
260  
ºC  
ºC  
ºC  
Tj  
Tstg  
TL  
10s max.  
SYMBOL  
PARAMETER  
VOLTAGE  
Unit  
V
B
D
M
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Jun - 02  
FT08...I  
HIGH COMMUTATION TRIAC  
Electrical Characteristics  
Quadrant  
Unit  
mA  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
11  
25  
16  
50  
14  
35  
Q1÷Q3  
MAX  
IGT  
Gate Trigger Current  
VD = 12 VDC , RL = 33W  
Tj = 25 ºC  
Tj = 125 ºC  
Tj = 25 ºC  
IDRM /IRRM  
VR = VDRM  
VR = VRRM  
,
,
1
5
mA  
µA  
V
MAX  
MAX  
MAX  
Off-State Leakage Current  
VTM  
*
VGT  
VGD  
IT = 11 Amp, tp = 380 µs, Tj = 25 ºC  
VD = 12 VDC , RL = 33W, Tj = 25 ºC  
VD = VDRM , RL = 3.3KW, Tj = 125 ºC  
IT = 100 mA , Gate open, Tj = 25 ºC  
IG = 1.2 IGT, Tj = 25 ºC  
1.55  
1.3  
0.2  
On-state Voltage  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
Holding Current  
Q1÷Q3 MAX  
V
Q1÷Q3  
MIN  
MAX  
MAX  
MAX  
MIN  
V
IH*  
IL  
25  
25  
35  
50  
60  
mA  
mA  
50  
Latching Current  
Q1,Q3  
Q2  
80  
80  
50  
VD = 0.67 x VDRM  
,
Gate open  
Critical Rate of Voltage Rise  
Critical Rate of Current Rise  
dv / dt*  
200  
400 1000  
V/µs  
Tj = 125 ºC  
9
9
MIN  
MIN  
MIN  
(dv/dt)c= 0.1 V/µs  
(dv/dt)c= 15 V/µs  
without snubber  
Tj = 125 ºC  
Tj = 125 ºC  
Tj = 125 ºC  
(di/dt)c*  
A/ms  
4.5  
4.5  
4.5  
Thermal Resistance  
Junction-Case  
Rth(j-c)  
ºC/W  
ºC/W  
1.6  
Thermal Resistance  
Junction-Ambient  
Rth(j-a)  
100  
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.  
PART NUMBER INFORMATION  
F
T
08  
11  
B
I
00 TU  
FAGOR  
TRIAC  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
CURRENT  
SENSITIVITY  
Jun - 02  
FT08...I  
HIGH COMMUTATION TRIAC  
Fig. 1: Maximum power dissipation versus  
average on-state current  
Fig. 2: Average and DC on-state current  
versus case temperature  
P (W)  
I
(A)  
T(RMS)  
10  
9
8
7
6
5
4
3
2
1
0
a = 180 º  
8
6
4
2
180 º  
a
a
I
(A)  
T(av)  
0
Tc (ºC)  
1
3
4
5
6
7
8
0
2
0
25  
50  
75  
100 125  
Fig. 3: Relative variation of thermal impedance  
junction to case versus pulse duration  
Fig. 4: Relative variation of gate trigger current  
and holding current versus junction temperature  
K = [Zth(j-c) / Rth (j-c)]  
1.0  
I
, I  
GT H, IL  
(Tj) / I , I  
GT H, IL  
(Tj = 25 ºC)  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
0.5  
0.2  
I
GT  
I
H & IL  
tp (s)  
Tj (ºC)  
0.1  
1E-3  
1E-2  
1E-1  
1E+0  
-40 -20  
0
20 40 60 80 100 120 140  
Fig. 6: Non repetitive surge peak on-state  
current for a sinusoidal pulse with width:  
tp < 10 ms, and corresponding value of I2t.  
Fig. 5: Non repetitive surge peak on-state  
current versus number of cycles  
(A). I2t (A2s)  
I
(A)  
I
TSM  
TSM  
80  
70  
60  
50  
40  
30  
20  
10  
0
500  
Tj initial = 25 ºC  
Tj initial = 25 ºC  
I
TSM  
100  
I2  
t
Number of cycles  
tp(ms)  
10  
1
10  
100  
1000  
2
5
1
10  
Jun - 02  
FT08...I  
HIGH COMMUTATION TRIAC  
Fig. 8: On-state characteristics (maximum  
values).  
I
(A)  
TM  
100.0  
10.0  
Tj max  
Vto = 0.8V  
Rd = 60 mW  
Tj =Tj max.  
Tj = 25 ºC  
1.0  
0.1  
V
(V)  
TM  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
IPAK TO 251-AA  
PACKAGE MECHANICAL DATA  
2º  
8º  
DIMENSIONS  
REF.  
Milimeters  
Nominal  
2.3 0.08  
1.067 0.01  
0.75 0.1  
0.95  
Min.  
2.19  
0.89  
0.64  
0.76  
0.46  
Max.  
2.38  
1.14  
0.89  
1.14  
0.58  
A
A1  
b
b1  
c
A
ø1x0.15  
E1  
c2  
E
L3  
2º  
2º  
8º  
8º  
8º  
D1  
D
c2  
D
D1  
E
E1  
e
L
0.8 0.013  
6.1 0.1  
H
5.97  
5.21  
6.35  
5.21  
6.22  
5.52  
6.73  
5.46  
2º  
2º  
8º  
L1  
6.58 0.14  
5.36 0.1  
2.28BSC  
9.2 0.2  
2 0.1  
e
b
L
8.89  
1.91  
0.89  
9.65  
2.28  
1.27  
L1  
L3  
b1  
A1  
Marking: type number  
Weight: 0.2 g  
c
Jun - 02  

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