首页 |元器件品牌

FT0816BH [ETC]

High Commutation TRIACs ; 高换向双向可控硅\n
FT0816BH
型号： FT0816BH
厂家： ETC    ETC
描述：

High Commutation TRIACs
高换向双向可控硅\n

可控硅 三端双向交流开关
文件： 总4页 (文件大小：146K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
FT08...H  
HIGH COMMUTATION TRIAC  
TO220-AB  
On-State Current  
Gate Trigger Current  
8 Amp  
£ 25 mA to £ 50 mA  
MT2  
Off-State Voltage  
200 V ÷ 600 V  
This series of TRIACs uses a high  
MT1  
MT2  
performance PNPN technology.  
These parts are intended for general  
purpose AC switching applications with  
highly inductive loads.  
G
Absolute Maximum Ratings, according to IEC publication No. 134  
SYMBOL  
PARAMETER  
RMS On-state Current  
CONDITIONS  
Min.  
Max.  
Unit  
All Conduction Angle, TC = 110 ºC  
Full Cycle, 60 Hz  
8
A
A
A
IT(RMS)  
ITSM  
ITSM  
Non-repetitive On-State Current  
Non-repetitive On-State Current  
Fusing Current  
84  
80  
36  
Full Cycle, 50 Hz  
tp = 10 ms, Half Cycle  
A2  
s
I2t  
Peak Gate Current  
20 µs max.  
Tj =125ºC  
Tj =125ºC  
4
1
A
W
IGM  
PG(AV)  
Average Gate Power Dissipation  
Critical rate of rise of on-state current  
I
G
= 2x IGT, tr £100ns  
50  
A/µs  
di/dt  
f= 120 Hz, Tj =125ºC  
Tj  
Operating Temperature  
Storage Temperature  
-40  
-40  
+125  
+150  
ºC  
ºC  
Tstg  
SYMBOL  
PARAMETER  
VOLTAGE  
Unit  
V
B
D
M
Repetitive Peak Off State  
Voltage  
200  
400  
600  
VDRM  
VRRM  
Jun - 02  
FT08...H  
HIGH COMMUTATION TRIAC  
Electrical Characteristics  
Quadrant  
Unit  
SYMBOL  
PARAMETER  
CONDITIONS  
SENSITIVITY  
11  
25  
16  
50  
14  
35  
(1)  
Q1÷Q3  
mA  
mA  
mA  
µA  
V
MAX  
IGT  
Gate Trigger Current  
VD = 12 VDC , RL = 30W  
Tj = 25 ºC  
Tj = 125 ºC  
Tj = 25 ºC  
IDRM /IRRM  
VR = VRRM  
,
1
5
MAX  
MAX  
MAX  
MAX  
MAX  
MAX  
Off-State Leakage Current  
(2)  
Vto  
Tj = 125 ºC  
Tj = 125 ºC  
0.85  
Threshold Voltage  
Dynamic Resistance  
On-state Voltage  
(2)  
Rd  
50  
1.55  
1.3  
mW  
V
(2)  
VTM  
IT = 11 Amp, tp = 380 µs, Tj = 25 ºC  
VGT  
VGD  
Gate Trigger Voltage  
Gate Non Trigger Voltage  
Holding Current  
VD = 12 VDC , RL = 30W, Tj = 25 ºC  
Q1÷Q3  
V
0.2  
V
D = VDRM , RL = 3.3KW, Tj = 125 ºC  
Q1÷Q3 MIN  
MAX  
V
(2)  
IT = 100 mA , Gate open, Tj = 25 ºC  
IG = 1.2 IGT, Tj = 25 ºC  
IH  
IL  
25  
40  
35  
50  
mA  
mA  
50  
Latching Current  
Q1,Q3  
Q2  
MAX  
MAX  
MIN  
70  
80  
50  
60  
VD = 0.67 x VDRM  
,
Gate open  
(2)  
Critical Rate of Voltage Rise  
Critical Rate of Current Rise  
dv / dt  
200  
400  
1000  
V/µs  
Tj = 125 ºC  
(2)  
-
-
-
-
MIN  
MIN  
MIN  
-
-
(dv/dt)c= 0.1 V/µs  
(dv/dt)c= 10 V/µs  
without snubber  
Tj = 125 ºC  
Tj = 125 ºC  
Tj = 125 ºC  
(dI/dt)c  
A/ms  
4
4.5  
7
Rth(j-c)  
Thermal Resistance  
Junction-Case  
ºC/W  
ºC/W  
1.6  
Thermal Resistance  
Junction-Ambient  
60  
Rth(j-a)  
(1) Minimum IGT is guaranted at 5% of IGT max.  
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.  
PART NUMBER INFORMATION  
F
T
08  
11  
B
H
00 TU  
FAGOR  
TRIAC  
PACKAGING  
FORMING  
CASE  
VOLTAGE  
CURRENT  
SENSITIVITY  
Jun - 02  
FT08...H  
HIGH COMMUTATION TRIAC  
Fig. 1: Maximum power dissipation versus  
RMS on-state curren (full cycle).  
Fig. 2: RMS on-state current versus case  
temperature (full cycle).  
I
(A)  
T(RMS)  
P (W)  
10  
10  
9
8
8
7
6
5
4
3
2
1
6
4
2
I
(A)  
T(RMS)  
Tc (ºC)  
0
0
0
1
2
3
4
5
6
7
8
0
25  
50  
75  
100  
125  
Fig. 4: On-state characteristics (maximum  
values)  
Fig. 3: : Relative variation of thermal  
impedance versus pulse duration.  
I
(A)  
K=[Zth / Rth]  
TM  
100  
10  
1
1E+0  
Zth(j-c)  
Tj max  
1E-1  
Zth(j-a)  
Tj = 25 ºC  
Tj max  
Vto = 0.85V  
Rt = 35mW  
V
(V)  
tp (s)  
1E-2  
TM  
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
1E-3  
1E-2  
1E-1  
1E+0 1E+1 1E+2 5E+2  
Fig. 5: Surge peak on-state current versus  
number of cycles  
Fig. 6: Non-repetitive surge peak on-state  
current for a sinusoidal pulse with width  
tp<10ms, and corresponding value of I  
2t.  
(A), I2 t (A2s)  
I
(A)  
I
TSM  
TSM  
90  
80  
Tj initial = 25 ºC  
1000  
100  
10  
t=20ms  
One cycle  
60  
40  
20  
0
I
dl/dt limitation  
50A/µs  
TSM  
Non repetitive  
Tj initial = 25 ºC  
I2t  
Repetitive  
Tc = 100 ºC  
Number of cycles  
tp (ms)  
10.00  
1
10  
100  
1000  
0.01  
0.10  
1.00  
Jun - 02  
FT08...H  
HIGH COMMUTATION TRIAC  
Fig. 8: Relative variation of critical rate of  
decrease of main current versus junction  
temperature  
Fig. 7: Relative variation of gate trigger  
current, holding current and latching versus  
junction temperature (typical values)  
(dI/dt) [Tj]/(dI/dc) [Tj specified]  
I
I
I [Tj]/I  
I
I .[Tj=25ºC]  
c
c
GT, H, L  
GT, H, L  
2.5  
2.0  
1.5  
1.0  
0.5  
0
6
5
4
3
2
1
0
I
GT  
IH&IL  
Tj(ºC)  
Tj(ºC)  
-40 -20  
0
20 40 60 80 100120140  
0
25  
50  
75  
100  
125  
TO-220AB (Plastic)  
PACKAGE MECHANICAL DATA  
DIMENSIONS  
Milimeters  
Nominal  
REF.  
c
B
b2  
Min.  
Max.  
A
a1  
a2  
B
b1  
b2  
C
c1  
c2  
e
F
I
I4  
L
15.20  
15.90  
L
3.75  
F
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
15.80  
2.65  
1.14  
1.14  
14.00  
10.40  
0.88  
1.32  
4.60  
0.70  
2.72  
2.70  
6.60  
3.85  
16.80  
2.95  
1.70  
1.70  
øI  
A
14  
c2  
a1  
13  
12  
a2  
16.40  
2.60  
b1  
M
I2  
I3  
M
c1  
e
Jun - 02  

相关型号：

FT0816BI

 High Commutation TRIACs
ETC

FT0816DD

 High Commutation TRIACs
ETC

FT0816DD00TR

 SURFACE MOUNT TRIAC
ETC

FT0816DH

 High Commutation TRIACs
ETC

FT0816DI

 High Commutation TRIACs
ETC

FT0816MD

 High Commutation TRIACs
ETC

FT0816MD00TR

 SURFACE MOUNT TRIAC
ETC

FT0816MH

 High Commutation TRIACs
ETC

FT0816MI

 High Commutation TRIACs
ETC

FT09P0G1

 D Subminiature Connector, 9 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
MOLEX

FT09P0G2

 D Subminiature Connector, 9 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
MOLEX

FT09P0G3

 D Subminiature Connector, 9 Contact(s), Male, Solder Terminal, Plug, ROHS COMPLIANT
MOLEX
©2020 ICPDF网 联系我们和版权申明