FS10VS9 [ETC]


型号：	FS10VS9
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 10A I(D) \| TO-263AB 晶体管\| MOSFET \| N沟道\| 450V V（ BR ） DSS \| 10A I（ D） \| TO- 263AB\n 晶体晶体管
文件：	总4页 (文件大小：200K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

Power Field-Effect Transistor, 10A I(D), 30V, 0.141ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 60V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

POWEREX

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 60V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

Power Field-Effect Transistor, 10A I(D), 150V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN

MITSUBISHI

ETC