DTC114EH [ETC]
Transistors ; 晶体管\n
ETC 
DTC114EM / DTC114EE / DTC114EUA
DTC114ECA / DTC114EKA / DTC114ESA
Transistors
Digital transistors (built-in resistors)
DTC114EM / DTC114EE / DTC114EUA /
DTC114ECA / DTC114EKA / DTC114ESA
!Features
!Equivalent circuit
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to
allow negative biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
OUT
R1
IN
R2
GND
OUT
3) Only the on/off conditions need to be set for operation, making device
design easy.
IN
GND
!Structure
NPN digital transistor (with built-in resistors)
!External dimensions (Units : mm)
1.6 0.2
DTC114EM
DTC114EE
1.2
0.2 0.8 0.2
1.0 0.1
0.50.5
0.7 0.1
(
)
2
+0.1
+0.1
0.2
−0.05
0.2
(3)
0.55 0.1
−0.05
(
)
1
(1) (2)
0~0.1
0.15Max.
(1) IN
(2) GND
(3) OUT
(3)
(1) GND
(2) IN
ROHM
: VMT3
+0.1
0.3
Abbreviated symbol : 24
−0.05
0.15 0.05
ROHM
:
EMT3
(3) OUT
Abbreviated symbol : 24
2.0 0.2
DTC114EUA
DTC114ECA
2.9
1.9
0.9 0.1
0.7 0.1
1.3 0.1
0.95
0.65 0.65
0.2
0.45
0.95 0.95
(1)
(2)
( )
2
( )
1
0~0.1
0~0.1
( )
3
(3)
0.15
+0.1
−0
(1) GND
(2) IN
(3) OUT
0.3
0.15 0.05
(1) GND
(2) IN
ROHM
EIAJ
:
UMT3
All terminals have same dimensions
0.4
:
SC-70
Each lead has same dimensions
ROHM
:
SST3
(3) OUT
Abbreviated symbol : 24
Abbreviated symbol : 24
4
0.2
2 0.2
2.9 0.2
1.9 0.2
0.95 0.95
DTC114EKA
DTC114ESA
+0.2
1.1
−0.1
0.8 0.1
(2)
(1)
0~0.1
+
0.15
0.45
−
0.05
(3)
+0.1
+
0.45
−
0.15
+
0.4
0.1
0.15
(1) GND
(2) IN
(3) OUT
2.5
+0.1
0.4
0.5
0.05
−0.06
−
−0.05
5
(1) GND
(2) OUT
(3) IN
ROHM
EIAJ
:
SMT3
All terminals have same dimensions
:
SC-59
ROHM
EIAJ
:
SPT
Abbreviated symbol : 24
:
SC-72
(1) (2) (3)
DTC114EM / DTC114EE / DTC114EUA
DTC114ECA / DTC114EKA / DTC114ESA
Transistors
!Absolute maximum ratings (Ta=25°C)
Limits(DTC114E
)
Parameter
Symbol
Unit
M
E
UA
50
CA
KA
SA
Supply voltage
Input voltage
V
CC
IN
V
V
V
−10~+40
I
O
50
Output current
mA
I
C(Max.)
Pd
100
Power dissipation
150
200
300
mW
°C
Junction temperature
Storage temperature
Tj
150
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
Max.
0.5
−
Unit
V
Conditions
=100µA
=10mA
=10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
V
I(off)
I(on)
−
3
−
−
V
CC=5V, I
=0.3V, I
/I
O
Input voltage
V
V
O
O
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
0.88
0.5
−
V
mA
µA
−
I
O I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I
=0V
G
I
30
7
−
O
O
R1
10
1
13
kΩ
−
−
−
R
2
/R
1
0.8
−
1.2
−
Transition frequency
f
T
250
MHz
VCE=10V, I
E
=−5mA, f=100MHz
∗
∗ Transition frequency of the device
!Packaging specifications
Package
VMT3
Taping
T2L
EMT3
UMT3
Taping
T106
SST3
Taping
T116
SMT3
Taping
T146
SPT
Taping
TP
Packaging type
Code
Taping
TL
Basic ordering
unit (pieces)
8000
3000
3000
3000
3000
5000
Type
DTC114EM
DTC114EE
DTC114EUA
DTC114ECA
DTC114EKA
DTC114ESA
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
DTC114EM / DTC114EE / DTC114EUA
DTC114ECA / DTC114EKA / DTC114ESA
Transistors
!Electrical characteristic curves
10m
5m
100
1k
V
O
=0.3V
V
CC=5V
VO=5V
50
20
500
200
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
500µ
10
5
100
50
Ta=−40°C
25°C
100°C
200µ
100µ
50µ
2
20
1
10
5
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I (A)
O
Fig.4 Output voltage vs. output
current
相关型号：
DTC114EKAT147
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
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