DTC114EKA [WILLAS]
Digital Transistors (Built-in Resistors); 数字晶体管（内置电阻）
| 型号： | DTC114EKA |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | Digital Transistors (Built-in Resistors) |
| 文件： | 总3页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Digital Transistors (Built-in Resistors)
DTC114EM/DTC114EE/DTC114EUA
DTC114EKA /DTC114ECA/DTC114ESA
DIGITAL TRANSISTOR (NPN)
·Equivalent Circuit
FEATURES
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors(see equivalent circuit)
The bias resistors consist of thin-film resistors with complete isolation
to allow positive biasing of the input.They also have the advantage of
almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making device design easy
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
PIN CONNENCTIONS and MARKING
DTC114EM
SOT-723
DTC114EE
SOT-523
1. IN
1. IN
2. GND
3. OUT
2. GND
3. OUT
MARKING:24
DTC114EUA
MARKING:24
DTC114EKA
SOT-323
SOT-23-3L
1. IN
1. IN
2. GND
3. OUT
2. GND
3. OUT
MARKING:24
DTC114ECA
MARKING:24
DTC114ESA
SOT-23
TO-92S
1. IN
1.GND
2.OUT
3.IN
2. GND
3. OUT
MARKING:24
2012-05
WILLAS ELECTRONIC CORP.
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Limits(DTC114E□)
UA KA
Symbol
Parameter
Unit
M
E
CA
SA
VCC
VIN
IO
Supply Voltage
50
V
V
Input Voltage
-10～+40
50
Output Current
mA
mA
mW
ICM
PD
Tj
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
100
100
150
200
300
150
℃
℃
Tstg
-55～+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Conditions
VCC=5V,IO=100µA
Min
Typ
Max
Unit
V
0.5
Input voltage
VO=0.3V,IO=10mA
IO/II=10mA/0.5mA
VI=5V
3
V
Output voltage
Input current
0.3
0.88
0.5
V
mA
μA
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
IO(off)
GI
VCC=50V,VI=0
VO=5V,IO=5mA
30
7
R1
10
1
13
kΩ
R2/R1
fT
0.8
1.2
VO=10V,IO=5mA,f=100MHz
250
MHz
2012-05
WILLAS ELECTRONIC CORP.
Typical Characteristics
DTC114EXX
OFF Characteristics
ON Characteristics
10
100
VCC=5V
VO=0.3V
Ta=100℃
25℃
3
1
30
10
Ta=25℃
100℃
0.3
0.1
3
1
0.03
0.01
0.3
0.1
0.0
0.4
0.8
1.2
1.6
2.0
0.1
0.3
1
3
10
30
100
INPUT VOLTAGE VI(OFF) (V)
OUTPUT CURRENT IO (mA)
VO(ON) —— IO
GI —— IO
1
1000
IO/II=20
VO=5V
Ta=100℃
25℃
300
100
0.3
0.1
Ta=100℃
25℃
30
10
0.03
0.01
3
1
3
0.3
3
1
10
30
100
0.1
1
10
30
100
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
PD —— Ta
CO —— VR
10
8
400
350
300
250
200
150
100
50
f=1MHz
Ta=25℃
DTC114ESA
6
DTC114EUA/KA/CA
DTC114EE
4
DTC114EM
2
0
0
0
4
8
12
16
20
0
25
50
75
100
125
150
REVERSE BIAS VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
2012-05
WILLAS ELECTRONIC CORP.
相关型号：
DTC114EKAT147
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
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