DTC114EKA [ETL]
Digital transistors (built-in resistors); 数字晶体管(内置电阻)![DTC114EKA](http://pdffile.icpdf.com/pdf1/p00113/img/icpdf/DTC114EKA_612883_icpdf.jpg)
型号: | DTC114EKA |
厂家: | ![]() |
描述: | Digital transistors (built-in resistors) |
文件: | 总2页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to
allow positive biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
DTC114EKA
DTC114ECA
3) Only the on/ off conditions need to be set for operation, making device design
easy.
•
Structure
+
2.9 0.2
0.2
PNP digital transistor (with built-in resistors)
•Equivalentcircuit
+
1.1 +-
0.1
1.9 0.2
+
0.95 0.95
+
0.8 0.1
(2)
(1)
0 ~ 0.1
(3)
R1
OUT
(1) GND
(2) IN
IN
0.1
0.06
0.15 +-
0.1
0.05
R2
0.4 +-
(3) OUT
GND(+)
OUT
All terminals have same dimensions
DTA114EKA
IN
GND(+)
EIAJ: SC— 59
+
2.9 0.2
0.2
0.1
+
0.95 +-
1.9 0.2
+
0.95 0.95
+
0.45 0.1
(2)
(1)
0 ~ 0.1
(3)
0.2Min
(1) GND
(2) IN
0.1
0.06
0.15 +-
0.1
0.05
0.4 +-
(3) OUT
All terminals have same dimensions
DTA114ECA
EIAJ: SOT—23
Absolute maximum ratings(Ta=25 °C)
•
Parameter
symbol
limits
unit
Supply voltage
Input voltage
V
–50
–10~+40
50
V
V
cc
V
IN
I O
I C(Max.)
Pd
Output current
mA
100
Power dissipation
200
mW
°C
Junction temperature
Storage temperature
T j
150
T stg
–55~+150
°C
P11–1/2
DTC114EKA DTC114ECA
Elecrical characteristics(Ta=25°C)
•
Parameter
symbol
Min.
—
3
Typ.
—
Max.
0.5
—
Unit
V
Conditions
V
VCC= 5V,IO= 100µA
VO= 0.3V,IO= 10mA
I O/ I I = 10mA / 0.5mA
I(off)
Input voltage
V I(on)
V O(on)
I I
—
Output Voltage
—
—
—
30
7
0.1
—
0.3
0.88
0.5
—
V
Input current
mA
µA
—
V = 5V
I
Output current
I O(off)
G I
—
V CC= 50V,V I = 0 V
DC current gain
—
V O= 5V, I O= 5mA
Input resistance
R 1
10
1
13
KΩ
—
—
—
Resistance ratio
R 2 / R 1
0.8
—
1.2
—
Transition frequency
*Transition frequency of the device
f
250
MHz
V CE= 10V, I E = –5mA, f=100MHz*
T
ELECTRICAL CHARACTERISTIC CURVES
-100
-10m
-5m
V
O = – 0.3V
V
CC= – 5 V
-50
-20
-2m
T
A = 100°C
25°C
–40°C
-1m
-500µ
-10
-5
-200µ
T
A = –40°C
25°C
100°C
-2
-100µ
-50µ
-20µ
-1
-0.5
-0.2
-10µ
-5µ
-2µ
-0.1
-1µ
-100µ-200µ -500µ -1m -2m
-5m -10m -20m
-50m -100m
0
–0.5
–1.0
–1.5
–2.0
–2.5
–3.0
OUTPUT CURRENT: I O (A)
INPUT VOLTAGE: V I(ON) (V)
Figure 1. Input voltage vs.output current
(ON characteristics)
Figure 2. Output current vs.input voltage
(OFF characteristics)
-1
1K
I
O / I I = 20
V
O = – 5 V
-0.5
-0.2
500
200
T
A = 100°C
25°C
–40°C
T
A = 100°C
25°C
–40°C
-0.1
100
50
-0.05
-0.02
20
-0.01
-.005
10
5
-.002
2
1
-.001
-100µ-200µ -500µ -1m -2m
-5m -10m -20m
-50m -100m
-100µ-200µ -500µ -1m -2m
-5m -10m -20m
-50m -100m
OUTPUT CURRENT: I O (A)
OUTPUT CURRENT: I O (A)
Figure 4. Output voltage vs.output current
Figure 3. DC current gain vs.output current
P11–2/2
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DTC114EKAT147
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHM
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