DSS13UTR [ETC]

SCHOTTKY 30V SOD-123FL;
DSS13UTR
型号: DSS13UTR
厂家: ETC    ETC
描述:

SCHOTTKY 30V SOD-123FL

文件: 总4页 (文件大小:321K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSS12U  
THRU  
DSS125U  
Technical Data  
Data Sheet N1873, Rev. A  
DSS12U THRU DSS125U  
SINGLE PHASE 1.0AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
The plastic package carries Underwriters  
Laboratory Flammability Classification 94V-0  
Metal silicon junction, majority carrier conduction  
Low power loss, high efficiency  
High temperature soldering guaranteed: 260/10°C  
seconds,0.375"(9.5mm) lead length, 5 lbs. (2.3kg)  
tension  
This is a Pb − Free Device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
SOD-123FL  
Circuit Diagram  
Mechanical Data  
Case: SOD-123FL, molded plastic  
Terminals: Plated leads, solderable per MIL-STD-750,  
Method 2026  
Polarity: Color band dentes cathode end  
Mounting Position: Any  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
DSS  
12U  
DSS  
13U  
DSS  
14U  
DSS  
15U  
DSS  
16U  
DSS  
18U  
DSS  
DSS  
DSS  
DSS  
Symbol  
110U 115U 120U 125U  
Characteristic  
Units  
D12U D13U D14U D15U D16U D18U D110U D115U D120U D125U  
Code  
VRRM  
VRWM  
VDC  
20  
20  
20  
30  
30  
30  
40  
40  
40  
50  
50  
50  
60  
60  
60  
80  
80  
80  
100 150 200 250  
100 150 200 250  
100 150 200 250  
V
V
V
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
RMS Reverse Voltage  
VRMS  
IF(AV)  
14  
21  
28  
35  
42  
56  
70  
105 140 175  
V
A
Average Rectified Output Current at TL=90  
1.0  
40  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on Rated load(JEDEC Method)  
IFSM  
A
I2t Rating for Fusing (t < 8.3ms)  
I2t  
6.640  
A2s  
V
Forward Voltage per element @IF=1.0A  
VF  
0.50  
110  
0.67  
0.80  
0.90  
0.05  
0.92  
0.1  
10  
Peak Reverse Current TA=25 ℃  
IR  
mA  
at rated DC blocking voltage TA=100 ℃  
5
Typical Junction Capacitance (Note 1)  
CJ  
80  
pF  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
DSS12U  
THRU  
DSS125U  
Technical Data  
Data Sheet N1873, Rev. A  
Ratings and Characteristics Curves  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
DSS12U  
THRU  
DSS125U  
Technical Data  
Data Sheet N1873, Rev. A  
Mechanical Dimensions SOD-123FL(Inches/Millimeters)  
Ordering Information  
Marking Diagram  
Device  
Package  
Shipping  
DSS12U  
THRU  
DSS125U  
SOD-123FL  
(Pb-Free)  
3000pcs / reel  
For information on tape and reel specifications, including part  
orientation and tape sizes, please refer to our tape and reel  
packaging specification.  
D12U  
= Marking Code  
Carrier Tape Specification SOD-123FL  
Millimeters  
SYMBOL  
Min.  
Max.  
A
B
C
d
1.95  
3.85  
1.35  
1.50  
2.15  
4.05  
1.55  
1.60  
E
F
P
P0  
P1  
1.65  
3.40  
3.90  
3.90  
1.90  
1.85  
3.60  
4.10  
4.10  
2.10  
W
7.90  
8.30  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   
DSS12U  
THRU  
DSS125U  
Technical Data  
Data Sheet N1873, Rev. A  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales  
department for the latest version of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement .  
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or  
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd  
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,  
products or circuits described in the datasheets.  
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any  
secondary damage resulting from use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics  
(Nanjing) Co., Ltd.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC  
- Sangdest Microelectronics (Nanjing) Co., Ltd.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations..  
China - Germany - Korea - Singapore - United States   
http://www.smc-diodes.com - sales@ smc-diodes.com   

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