BT136X_SERIES [ETC]
Triacs ; 三端双向可控硅\n
| 型号： | BT136X_SERIES |
| 厂家： | 
ETC |
| 描述： | Triacs
|
| 文件： | 总7页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Triacs
BT136X series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Passivated triacs in a full pack plastic
envelope, intended for use in
SYMBOL PARAMETER
MAX.
MAX.
800
UNIT
applications
requiring
high
BT136X-
BT136X-
600
600F
bidirectional transient and blocking
voltage capability and high thermal
cycling
performance.
Typical
VDRM
Repetitive peak off-state
voltages
600
800
V
applications include motor control,
industrial and domestic lighting,
heating and static switching.
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak on-state
current
4
25
4
25
A
A
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
main terminal 1
case
T2
T1
2
main terminal 2
gate
3
G
1
2 3
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
-600
-800
800
VDRM
Repetitive peak off-state
voltages
-
-
6001
IT(RMS)
ITSM
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; Ths ≤ 92 ˚C
full sine wave; Tj = 25 ˚C prior to
surge
4
A
t = 20 ms
-
-
-
25
27
3.1
A
A
t = 16.7 ms
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
t = 10 ms
A2s
ITM = 6 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
T2+ G+
-
50
50
50
10
2
5
5
0.5
150
125
A/µs
A/µs
A/µs
A/µs
A
T2+ G-
-
T2- G-
-
T2- G+
-
IGM
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
VGM
PGM
PG(AV)
Tstg
Tj
-
V
-
-
W
over any 20 ms period
W
-40
-
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
June 2001
1
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Cisol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
-
-
2500
V
three terminals to external
heatsink
waveform;
R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz
heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Rth j-a
Thermal resistance
junction to heatsink
full or half cycle
with heatsink compound
without heatsink compound
in free air
-
-
-
-
-
55
5.5
7.2
-
K/W
K/W
K/W
Thermal resistance
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT136X-
VD = 12 V; IT = 0.1 A
T2+ G+
...
...F
IGT
Gate trigger current
Latching current
Holding current
-
-
-
-
5
8
35
35
35
70
25
25
25
70
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
11
30
IL
VD = 12 V; IGT = 0.1 A
T2+ G+
-
-
-
-
-
7
16
5
7
5
20
30
20
30
15
20
30
20
30
15
mA
mA
mA
mA
mA
T2+ G-
T2- G-
T2- G+
IH
VD = 12 V; IGT = 0.1 A
VT
On-state voltage
IT = 5 A
-
-
1.4
0.7
0.4
1.70
1.5
-
V
V
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A;
Tj = 125 ˚C
0.25
ID
Off-state leakage current VD = VDRM(max)
;
-
0.1
0.5
mA
Tj = 125 ˚C
June 2001
2
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136X series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT136X-
VDM = 67% VDRM(max)
...
...F
dVD/dt
dVcom/dt
tgt
Critical rate of rise of
off-state voltage
;
100
50
250
50
2
-
-
-
V/µs
V/µs
µs
Tj = 125 ˚C; exponential
waveform; gate open
circuit
Critical rate of change of
commutating voltage
VDM = 400 V; Tj = 95 ˚C;
IT(RMS) = 4 A;
-
-
-
-
dIcom/dt = 1.8 A/ms; gate
open circuit
Gate controlled turn-on
time
ITM = 6 A; VD = VDRM(max);
IG = 0.1 A; dIG/dt = 5 A/µs
June 2001
3
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136X series
Ptot / W
8
Ths(max) / C
IT(RMS) / A
5
4
3
2
1
0
81
86.5
92
7
92 C
= 180
120
1
6
97.5
5
4
3
2
1
0
90
60
103
30
108.5
114
119.5
125
0
1
2
3
4
5
-50
0
50
100
150
IT(RMS) / A
Ths / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS)
versus heatsink temperature Ths.
,
IT(RMS) / A
12
ITSM / A
1000
I
TSM
time
I
T
10
8
T
Tj initial = 25 C max
100
6
dIT/dt limit
4
T2- G+ quadrant
2
10
10us
0
100us
1ms
T / s
10ms
100ms
0.01
0.1
surge duration / s
1
10
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Ths ≤ 92˚C.
VGT(Tj)
VGT(25 C)
ITSM / A
30
25
20
15
10
5
1.6
I
TSM
time
I
T
1.4
1.2
1
T
Tj initial = 25 C max
0.8
0.6
0.4
0
1
10
100
1000
-50
0
50
Tj / C
100
150
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
June 2001
4
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136X series
IT / A
IGT(Tj)
IGT(25 C)
12
10
8
Tj = 125 C
Tj = 25 C
3
T2+ G+
T2+ G-
T2- G-
T2- G+
typ
max
2.5
2
Vo = 1.27 V
Rs = 0.091 ohms
6
1.5
1
4
2
0.5
0
0
-50
0
50
Tj / C
100
150
0
0.5
1
1.5
VT / V
2
2.5
3
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Zth j-hs (K/W)
10
IL(Tj)
IL(25 C)
with heatsink compound
3
without heatsink compound
2.5
2
unidirectional
1
bidirectional
1.5
1
t
P
D
0.1
p
t
0.5
0
0.01
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
10s
-50
0
50
Tj / C
100
150
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
Fig.11. Transient thermal impedance Zth j-hs, versus
pulse width tp.
versus junction temperature Tj.
dVcom/dt (V/us)
1000
IH(Tj)
IH(25C)
3
off-state dV/dt limit
BT136 SERIES
2.5
2
100
BT136...F SERIES
1.5
1
10
0.5
0
dIcom/dt = 5.1 3.9
A/ms
3
2.3 1.8 1.4
100
1
-50
0
50
Tj / C
100
150
150
50
0
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
versus junction temperature Tj.
June 2001
5
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136X series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2001
6
Rev 1.400
Philips Semiconductors
Product specification
Triacs
BT136X series
DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2
PRODUCT
DEFINITIONS
STATUS3
Objective data
Development
This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice
Preliminary data
Qualification
Production
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
June 2001
7
Rev 1.400
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