BT137-500 [COMSET]
TRIACS; 双向可控硅
| 型号： | BT137-500 |
| 厂家： | 
COMSET SEMICONDUCTOR |
| 描述： | TRIACS |
| 文件： | 总3页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BT137 Series
TRIACS
FEATURE
Glass passivated triacs in a plastic TO220 package.
They are intended for use in applications requiring high
bidirectional transient and blocking voltage capability and
high thermal cycling performance.
Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Value
Symbol
VDRM
Ratings
Unit
BT137-500 BT137-600 BT137-800
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
500
500
600
800
800
V
VRRM
IT(RMS)
ITSM
600
8
RMS on-state current
A
A
Non-repetitive peak on-
state current
65
5
PGM
Peak gate power
W
PG(AV)
Tstg
Average gate power
0.5
W
Storage temperature range
Operating junction
temperature
-45 to +150
°C
Tj
110
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
R∂j-mb
R∂JA
Thermal resistance junction to mounting base
Thermal resistance junction to ambient
≤ 2
≤ 60
°C/W
26/09/2012
COMSET SEMICONDUCTORS
1 | 3
BT137 Series
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VDRM
Ratings
Test Condition(s)
Min Typ Max Unit
BT137-500 500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Repetitive peak off-state
voltage
ID = 0.1 mA
ID = 0.5 mA
BT137-600 600
BT137-800 800
BT137-500 500
BT137-600 600
BT137-800 800
V
Repetitive peak reverse
voltage
VRRM
-
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
-
-
-
-
-
-
-
-
-
-
-
-
10
10
10
25
1.5
1.5
1.5
1.8
45
60
45
60
VD = 12 V
RL = 100 Ω
IGT
Gate trigger current
Gate trigger voltage
mA
V
VD = 12 V
RL = 100 Ω
VGT
VD = 12 V
GT = 100 mA
IL
Latching current
Holding current
mA
mA
I
IH
IT = 200 mA, IGT = 50 mA
-
-
50
VD = VDRM max
Tj = 125°C
IT = 20 A
ID
Off-state leakage current
On-state voltage
-
-
-
-
0.5
1.6
mA
V
VT
VDM = 67% VDRMmax
Tj = 125°C
Critical rate of rise of
off-state voltage
dVD/dt
100
250
-
V/µs
Exponential waveform;
gate open circuit
VD = 400 V; Tj = 95 °C
dIcom/dt = 3.6 A/ms; IT = 8 A
gate open circuit
Critical rate of rise of
dVCOM/dt change commutatating
-
-
20
2
-
-
V/µs
µs
current
Gate controlled turn-on
time
ITM = 12 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
tgt
26/09/2012
COMSET SEMICONDUCTORS
2 | 3
BT137 Series
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Main Terminal 1
Main Terminal 2
Gate
Main Terminal 2
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
26/09/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
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