BCP53-10T1 [ETC]
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | SOT-223 ; 晶体管| BJT | PNP | 80V V( BR ) CEO | 1.5AI ( C) | SOT- 223\n![BCP53-10T1](http://pdffile.icpdf.com/pdf1/p00008/img/icpdf/BCP53_38315_icpdf.jpg)
型号: | BCP53-10T1 |
厂家: | ![]() |
描述: | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | SOT-223
|
文件: | 总4页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BCP53T1 Series
Preferred Devices
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
http://onsemi.com
• High Current: 1.5 Amps
• NPN Complement is BCP56
MEDIUM POWER
HIGH CURRENT
SURFACE MOUNT
PNP TRANSISTORS
• The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
• Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel.
COLLECTOR 2,4
• Device Marking:
BCP53T1 = AH
BCP53–10T1 = AH–10
BCP53–16T1 = AH–16
BASE
1
EMITTER 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Value
–80
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
MARKING DIAGRAM
4
–100
–5.0
1.5
1
2
3
AHxxx
I
C
SOT–223
CASE 318E
STYLE 1
Total Power Dissipation
P
D
@ T = 25°C (Note 1.)
1.5
12
Watts
mW/°C
A
AHxxx = Device Code
Derate above 25°C
xxx
= –10 or –16
Operating and Storage
Temperature Range
T , T
–65 to
+150
°C
J
stg
ORDERING INFORMATION
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Device
Package
SOT–223
SOT–223
SOT–223
Shipping
Thermal Resistance,
Junction to Ambient
(surface mounted)
R
83.3
°C/W
θJA
BCP53T1
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
BCP53–10T1
BCP53–16T1
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
November, 2000 – Rev. 2
BCP53T1/D
BCP53T1 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (I = –100 µAdc, I = 0)
V
V
–100
–80
–100
–5.0
–
–
–
–
–
–
–
–
–
Vdc
Vdc
C
E
(BR)CBO
Collector-Emitter Breakdown Voltage (I = –1.0 mAdc, I = 0)
C
B
(BR)CEO
Collector-Emitter Breakdown Voltage (I = –100 µAdc, R
= 1.0 kohm)
V
–
Vdc
C
BE
(BR)CER
(BR)EBO
Emitter-Base Breakdown Voltage (I = –10 µAdc, I = 0)
V
–
Vdc
E
C
Collector-Base Cutoff Current (V
CB
= –30 Vdc, I = 0)
I
–100
–10
nAdc
µAdc
E
CBO
Emitter-Base Cutoff Current (V
= –5.0 Vdc, I = 0)
I
EBO
–
EB
C
ON CHARACTERISTICS
DC Current Gain (I = –5.0 mAdc, V
= –2.0 Vdc) All Part Types
h
FE
25
40
63
100
25
–
–
–
–
–
–
–
C
CE
= –2.0 Vdc)
(I = –150 mAdc, V
BCP53T1
BCP53–10T1
BCP53–16T1
250
160
250
–
C
CE
(I = –500 mAdc, V
= –2.0 Vdc) All Part Types
C
CE
Collector-Emitter Saturation Voltage (I = –500 mAdc, I = –50 mAdc)
V
CE(sat)
–
–
–
–
–0.5
–1.0
Vdc
Vdc
C
B
Base-Emitter On Voltage (I = –500 mAdc, V
C
= –2.0 Vdc)
V
BE(on)
CE
DYNAMIC CHARACTERISTICS
Current-Gain – Bandwidth Product
f
T
–
50
–
MHz
(I = –10 mAdc, V
CE
= –5.0 Vdc, f = 35 MHz)
C
TYPICAL ELECTRICAL CHARACTERISTICS
500
500
V
CE
= 2 V
300
200
100
50
V
CE
= 2 V
100
50
20
20
1
3
5
10
30 50 100
300 500 1000
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Current Gain Bandwidth Product
1
0.8
0.6
0.4
0.2
0
120
110
100
90
V
@ I /I = 10
C B
(BE)sat
80
V
@ V = 2 V
CE
(BE)on
C
ib
70
60
50
40
30
20
10
C
V
@ I /I = 10
C B
ob
(CE)sat
0
1
10
100
1000
2
4
6
8
10 12
14
16
18
20
0
I , COLLECTOR CURRENT (mA)
C
V, VOLTAGE (VOLTS)
Figure 3. Saturation and “ON” Voltages
Figure 4. Capacitances
http://onsemi.com
2
BCP53T1 Series
INFORMATION FOR USING THE SOT–223 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.15
3.8
0.079
2.0
0.248
6.3
SOT–223
0.091
0.091
2.3
2.3
0.079
2.0
mm
inches
0.059
1.5
0.059
1.5
0.059
1.5
SOT–223 POWER DISSIPATION
The power dissipation of the SOT–223 is a function of
the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power dissipa-
tion. Power dissipation for a surface mount device is deter-
the equation for an ambient temperature T of 25°C, one
can calculate the power dissipation of the device which in
this case is 1.5 watts.
A
150°C – 25°C
83.3°C/W
mined byT
, the maximum rated junction temperature
of the die, Rθ , the thermal resistance from the device
J(max)
P
=
= 1.50 watts
D
JA
junction to ambient; and the operating temperature, T . Us-
ing the values provided on the data sheet for the SOT–223
A
The 83.3°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve
a power dissipation of 1.5 watts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad . Using a board material such as
Thermal Clad, a higher power dissipation of 1.6 watts can
be achieved using the same footprint.
package, P can be calculated as follows.
D
T
– T
A
J(max)
P
=
D
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied dur-
ing cooling
* Soldering a device without preheating can cause exces-
sive thermal shock and stress which can result in damage
to the device.
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
http://onsemi.com
3
BCP53T1 Series
PACKAGE DIMENSIONS
SOT–223
CASE 318E–04
ISSUE K
A
F
NOTES:
ąă1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
ąă2. CONTROLLING DIMENSION: INCH.
4
2
INCHES
DIM MIN MAX
MILLIMETERS
S
B
MIN
6.30
3.30
1.50
0.60
2.90
2.20
MAX
6.70
3.70
1.75
0.89
3.20
2.40
0.100
0.35
2.00
1.05
10
1
3
A
B
C
D
F
0.249
0.130
0.060
0.024
0.115
0.087
0.263
0.145
0.068
0.035
0.126
0.094
D
G
H
J
L
0.0008 0.0040 0.020
G
0.009
0.060
0.033
0
0.014
0.078
0.041
10
0.24
1.50
0.85
0
J
K
L
C
M
S
_
_
_
_
0.08 (0003)
0.264
0.287
6.70
7.30
M
H
K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Thermal Clad is a trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
BCP53T1/D
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