首页 |元器件品牌

BCP53-10TA [ZETEX]

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin;
BCP53-10TA
型号： BCP53-10TA
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

晶体 晶体管 局域网
文件： 总1页 (文件大小：46K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
SOT223 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
BCP53  
ISSUE 3 – AUGUST 1995  
✪
FEATURES  
*
*
Suitable for AF drivers and output stages  
High collector current and Low VCE(sat)  
C
COMPLEMENTARY TYPE – BCP56  
E
C
PARTMARKING DETAILS – BCP53  
BCP53 – 10  
B
BCP53 – 16  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
-100  
-80  
-5  
UNIT  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
-1.5  
-1  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
2
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -100  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=-100µA  
IC=- 10mA *  
IE=-10µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
-80  
-5  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-100  
-20  
nA  
µA  
V
CB=-30V  
VCB=-30V, Tamb=150°C  
Emitter Cut-Off Current IEBO  
-10  
VEB=-5V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.5  
V
IC=-500mA, IB=-50mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
-1.0  
250  
V
IC=-500mA, VCE=-2V*  
Static Forward Current hFE  
Transfer Ratio  
40  
25  
IC=-150mA, VCE=-2V*  
IC=-500mA, VCE=-2V*  
IC=-150mA, VCE=-2V*  
IC=-150mA, VCE=-2V*  
BCP53-10 63  
BCP53-16 100  
100  
160  
160  
250  
Transition Frequency  
fT  
125  
MHz  
IC=-50mA, VCE=-10V,  
f=100MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
3 - 15  

相关型号：

BCP53-10TC

 Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
DIODES

BCP53-10TF

 BCP53-10T/SOT223/SC-73
ETC

BCP53-10TX

 TRANS PNP 80V 1A SOT223
ETC

BCP53-16

 PNP medium power transistors
NXP

BCP53-16

 PNP Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON

BCP53-16

 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
ZETEX

BCP53-16

 LOW POWER PNP TRANSISTOR
STMICROELECTR

BCP53-16

 80 V, 1 A PNP medium power transistorProduction
NEXPERIA

BCP53-16,115

 TRANS PNP 80V 1A SOT223
ETC

BCP53-16,135

 80 V, 1 A PNP medium power transistor SC-73 4-Pin
NXP

BCP53-16-TAPE-7

 TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
NXP

BCP53-16/T1

 TRANSISTOR MEDIUM POWER
ETC
©2020 ICPDF网 联系我们和版权申明