BCP53-10T1G [ONSEMI]
PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT; PNP硅外延晶体管中功率高电流表面贴装
| 型号： | BCP53-10T1G |
| 厂家： | 
ONSEMI |
| 描述： | PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT |
| 文件： | 总5页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP53 Series
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT−223 package
which is designed for medium power surface mount applications.
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• High Current
• NPN Complement is BCP56
• The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering,
eliminating the possibility of damage to the die
MEDIUM POWER HIGH
CURRENT SURFACE MOUNT
PNP TRANSISTORS
• Device Marking:
COLLECTOR 2, 4
BCP53T1 = AH
BCP53−10T1 = AH−10
BCP53−16T1 = AH−16
1
BASE
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
EMITTER 3
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
4
1
AYW
XXXXXG
G
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
3
C
SOT−223
CASE 318E
STYLE 1
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
−80
Unit
Vdc
Vdc
Vdc
Adc
1
V
CEO
V
CBO
V
EBO
−100
−5.0
1.5
A
Y
W
= Assembly Location
= Year
= Work Week
I
C
XXXXX = Specific Device Code
G
= Pb−Free Package
Total Power Dissipation
P
D
@ T = 25°C (Note 1)
1.5
12
W
mW/°C
A
(*Note: Microdot may be in either location)
Derate above 25°C
Operating and Storage
Temperature Range
T , T
−65 to +150
°C
ORDERING INFORMATION
J
stg
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
BCP53T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
SBCP53−10T1G SOT−223
(Pb−Free)
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
1000/Tape & Reel
4000/Tape & Reel
BCP53−10T1G
SOT−223
(Pb−Free)
THERMAL CHARACTERISTICS
SBCP53−10T1G SOT−223
(Pb−Free)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
R
83.3
°C/W
BCP53−16T1G
SOT−223
(Pb−Free)
q
JA
SBCP53−16T1G SOT−223
(Pb−Free)
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
T
L
260
10
°C
s
BCP53−16T3G
SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 10
BCP53T1/D
BCP53 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Base Breakdown Voltage
(I = −100 mAdc, I = 0)
V
Vdc
Vdc
(BR)CBO
(BR)CEO
(BR)CER
(BR)EBO
−100
−80
−100
−5.0
−
−
−
−
−
−
−
−
−
C
E
Collector−Emitter Breakdown Voltage
(I = −1.0 mAdc, I = 0)
V
V
V
C
B
Collector−Emitter Breakdown Voltage
(I = −100 mAdc, R = 1.0 kW)
Vdc
−
C
BE
Emitter−Base Breakdown Voltage
(I = −10 mAdc, I = 0)
Vdc
−
E
C
Collector−Base Cutoff Current
(V = −30 Vdc, I = 0)
I
nAdc
mAdc
CBO
−100
−10
CB
E
Emitter−Base Cutoff Current
(V = −5.0 Vdc, I = 0)
I
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = −5.0 mAdc, V = −2.0 Vdc)
C
CE
All Part Types
(I = −150 mAdc, V = −2.0 Vdc)
25
−
−
C
CE
BCP53, SBCP53
BCP53−10, SBCP53−10
BCP53−16, SBCP53−16
40
63
100
−
−
−
250
160
250
(I = −500 mAdc, V = −2.0 Vdc)
All Part Types
C
CE
25
−
−
−
−
−
Collector−Emitter Saturation Voltage
V
Vdc
Vdc
CE(sat)
(I = −500 mAdc, I = −50 mAdc)
−0.5
−1.0
C
B
Base−Emitter On Voltage
(I = −500 mAdc, V = −2.0 Vdc)
V
BE(on)
−
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = −10 mAdc, V = −5.0 Vdc, f = 35 MHz)
−
50
−
C
CE
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2
BCP53 Series
TYPICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
200
180
IC/IB = 10
BCP53, −10, −16
150°C, 5 V
150°C, 2 V
+150°C
160
140
120
100
80
−55°C
+25°C
25°C, 5 V
25°C, 2 V
−55°C, 5 V
−55°C, 2 V
60
0.4
40
0.2
0
20
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
10
10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (A)
C
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. DC Current Gain vs. Collector
Current (BCP53)
180
300
250
200
150
100
150°C, 5 V
150°C, 2 V
150°C, 5 V
150°C, 2 V
160
140
120
100
80
25°C, 5 V
25°C, 2 V
25°C, 5 V
25°C, 2 V
−55°C, 5 V
−55°C, 2 V
−55°C, 5 V
−55°C, 2 V
60
40
50
0
20
0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 3. DC Current Gain vs. Collector
Current (BCP53−10)
Figure 4. DC Current Gain vs. Collector
Current (BCP53−16)
1.2
1.2
1.1
1.0
0.9
IC/IB = 10
BCP53, −10
IC/IB = 10
BCP53 −16
1.1
1.0
0.9
0.8
0.7
0.6
−55°C
−55°C
0.8
0.7
0.6
+25°C
+25°C
0.5
0.4
0.5
0.4
+150°C
+150°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 5. BCP53, −10 Base Emitter Saturation
Voltage vs. Collector Current
Figure 6. BCP53−16 Base Emitter Saturation
Voltage vs. Collector Current
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3
BCP53 Series
TYPICAL CHARACTERISTICS
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
1.2
BCP53, −10
Vce = 2 V
BCP53 −16
Vce = 2 V
1.1
1.0
0.9
−55°C
0.8
−55°C
0.7
+25°C
0.6
0.5
+25°C
+150°C
0.4
0.4
0.3
0.3
0.2
+150°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 7. BCP53, −10 Base Emitter Turn−On
Voltage vs. Collector Current VBE(on)
Figure 8. BCP53−16 Base Emitter Turn−On
Voltage vs. Collector Current
1.0
110
100
BCP53, −10, −16
IC = 1.0 A
IC = 1.5 A
BCP53−10
BCP53
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
IC = 500 mA
90
80
70
60
IC = 100 mA
BCP53−16
50
40
0.1
0
0.001
0.01
0.1
1
0
1
2
3
4
5
I , BASE CURRENT (A)
b
VOLTAGE (V)
Figure 9. BCP53, −10, −16 Saturation Region
Figure 10. Input Capacitance
25
20
10
1
100 ms
1 s
10 ms
1 ms
BCP53−10
15
10
BCP53
CONTINUOUS THERMAL LIMIT
0.1
BCP53−16
5
0
SINGLE PULSE TEST AT T
= 25°C
amb
0.01
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
VOLTAGE (V)
Vce, COLLECTOR EMITTER VOLTAGE (V)
Figure 11. Output Capacitance
Figure 12. Standard Operating Area
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4
BCP53 Series
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
ꢀꢁ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
ꢀꢁ2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
q
A
0.08 (0003)
STYLE 1:
A1
L
PIN 1. BASE
2. COLLECTOR
3. EMITTER
L1
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BCP53T1/D
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