APT13GP120BD1 [ETC]

Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family ; 电压： 1200V VF /的VCE（on ）： 3.6V ID（续）： 13安培|超高速IGBT系列\n

APT13GP120BD1


型号：	APT13GP120BD1
厂家：	ETC
描述：	Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps\|Ultrafast IGBT Family 电压： 1200V VF /的VCE（on ）： 3.6V ID（续）： 13安培\|超高速IGBT系列\n 晶体晶体管功率控制瞄准线双极性晶体管栅局域网
文件：	总7页 (文件大小：86K)
下载：	下载PDF数据表文档文件

APT13GP120BDF1

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT13GP120BDF1

Insulated Gate Bipolar Transistor

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0 MICROSEMI

APT13GP120BDQ1

POWER MOS 7 IGBT

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27 ADPOW

APT13GP120BDQ1G

POWER MOS 7 IGBT

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25 ADPOW

APT13GP120BDQ1G

Power Semiconductors Power Modules

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15 MICROSEMI

APT13GP120BG

POWER MOS 7 IGBT

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12 ADPOW

APT13GP120BG

POWER MOS 7 IGBT

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28 ADPOW

APT13GP120BSC

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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0 ADPOW

APT13GP120K

POWER MOS 7 IGBT

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33 ADPOW

APT13GP120K

Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family

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30 ETC

APT13GP120KG

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 MICROSEMI

APT13GP120S

POWER MOS 7 IGBT

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13 ADPOW

APT13GP120S

POWER MOS 7 IGBT

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14 ADPOW

APT13GP120SG

POWER MOS 7 IGBT

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5 ADPOW

APT13GP120SG

POWER MOS 7 IGBT

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16 ADPOW

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