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元器件品牌
APT13GP120BDF1
[MICROSEMI]
Insulated Gate Bipolar Transistor;
元器件型号：
APT13GP120BDF1
生产厂家：
MICROSEMI CORPORATION
描述和应用：
Insulated Gate Bipolar Transistor
局域网 栅 瞄准线 功率控制 晶体管
PDF文件：
总9页 (文件大小：194K)
下载文档：
下载PDF数据表文档文件
型号参数：APT13GP120BDF1参数
查看货源
APT13GP120BDQ1
POWER MOS 7 IGBT
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27
ADPOW
APT13GP120BDQ1G
POWER MOS 7 IGBT
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25
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APT13GP120BDQ1G
Power Semiconductors Power Modules
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15
MICROSEMI
APT13GP120BG
POWER MOS 7 IGBT
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12
ADPOW
APT13GP120BG
POWER MOS 7 IGBT
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28
ADPOW
APT13GP120BSC
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN
Warning
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156
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0
ADPOW
APT13GP120K
POWER MOS 7 IGBT
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33
ADPOW
APT13GP120K
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family
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ETC
APT13GP120KG
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
Warning
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156
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0
MICROSEMI
APT13GP120S
POWER MOS 7 IGBT
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13
ADPOW
APT13GP120S
POWER MOS 7 IGBT
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156
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14
ADPOW
APT13GP120SG
POWER MOS 7 IGBT
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5
ADPOW
APT13GP120SG
POWER MOS 7 IGBT
Warning
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156
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16
ADPOW
APT14050JVFR
POWER MOS V FREDFET
Warning
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156
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41
ADPOW
APT14050JVFR
POWER MOS V FREDFET
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156
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16
ADPOW
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