APT13GP120BSC [ADPOW]

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN;
APT13GP120BSC
型号: APT13GP120BSC
厂家: ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述:

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

双极性晶体管
文件: 总6页 (文件大小:409K)
下载:  下载PDF数据表文档文件

APT13GP120K

POWER MOS 7 IGBT

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33 ADPOW

APT13GP120K

Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family

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30 ETC

APT13GP120KG

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 MICROSEMI

APT13GP120S

POWER MOS 7 IGBT

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13 ADPOW

APT13GP120S

POWER MOS 7 IGBT

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14 ADPOW

APT13GP120SG

POWER MOS 7 IGBT

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5 ADPOW

APT13GP120SG

POWER MOS 7 IGBT

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16 ADPOW

APT14050JVFR

POWER MOS V FREDFET

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41 ADPOW

APT14050JVFR

POWER MOS V FREDFET

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16 ADPOW

APT14F100B

N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns

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26 MICROSEMI

APT14F100B_09

N-Channel FREDFET

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20 MICROSEMI

APT14F100S

N-Channel FREDFET 1000V, 14A, 1.00ヘ Max, trr ÷240ns

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13 MICROSEMI

APT14M100B

N-Channel MOSFET

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25 MICROSEMI

APT14M100B

N-Channel MOSFET

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16 MICROSEMI

APT14M100B_09

N-Channel MOSFET

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10 MICROSEMI