2SD2484 [ETC]
;
| 型号： | 2SD2484 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总5页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD2484
Silicon NPN Epitaxial
Application
TO-92MOD.
Low frequency power amplifier
Features
• Low saturation voltage
V
= 0.1 V typ. (at I = 1 A, I = 50 mA)
CE(sat)
C B
• Large current capacitance
I = 2 A
C
1. Emitter
2. Collector
3. Base
3
2
1
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to base voltage
V
50
V
CBO
———————————————————————————————————————————
Collector to emitter voltage
V
50
V
CEO
———————————————————————————————————————————
Emitter to base voltage
V
6
V
EBO
———————————————————————————————————————————
Collector current
I
2
A
C
———————————————————————————————————————————
Collector peak current
ic(peak)*
3
A
———————————————————————————————————————————
Collector power dissipation
P
0.9
W
C
———————————————————————————————————————————
Junction temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
Note: * PW ≤ 10 ms, duty cycle ≤20 %
2SD2484
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Collector to base breakdown
V
50
—
—
V
I = 10 µA,
(BR)CBO
C
voltage
I = 0
E
———————————————————————————————————————————
Collector to emitter breakdown
V
50
—
—
V
I = 1 mA,
(BR)CEO
C
voltage
R
= ∞
BE
———————————————————————————————————————————
Emitter to base breakdown
V
6
—
—
V
I = 10 µA
(BR)EBO
E
voltage
I
= 0
C
———————————————————————————————————————————
Collector to base cutoff current
I
—
—
1.0
µA
V
= 40 V,
CBO
CB
I = 0
E
———————————————————————————————————————————
Collector to emitter cutoff current I
—
—
5.0
µA
V
= 40 V,
CEO
CE
R
= ∞
BE
———————————————————————————————————————————
Emitter to base cutoff current
I
—
—
1.0
µA
V
= 5 V,
EBO
EB
I
= 0
C
———————————————————————————————————————————
DC current transfer ratio
h
120
—
300
V
= 2 V,
FE1
CE
I
= 1.5 A*
C
———————————————————————————————————————————
DC current transfer ratio
h
40
—
—
V
= 2 V,
FE2
CE
I
= 5 A*
C
———————————————————————————————————————————
Collector to emitter saturation
V
—
—
0.2
V
I =1 A*
CE(sat)
C
voltage
I = 50 mA
B
———————————————————————————————————————————
Base to emitter saturation
V
—
—
1.2
V
I =1 A*
BE(sat)
C
voltage
I = 50 mA
B
———————————————————————————————————————————
Note: * pulse test
2SD2484
Area of Safe Operation
Maximum Collector Power Dissipation Curve
1.6
10
ic(peak)
3
1
1.2
0.8
0.4
I (max)
C
0.3
0.1
0.03
0.01
Ta = 25 °C
1 shot pulse
0
0.1 0.3
1
3
10
30
100
50
100
150
200
Ambient Temperature Ta (°C)
Collector to Emitter Voltage
V
(V)
CE
Typical Output Characteristics
20 mA 18 mA
DC Current Transfer Ratio vs.
Collector Current
2.0
1.6
1.2
0.8
0.4
1000
300
75 °C
25 °C
6 mA
4 mA
100
Ta = –25 °C
30
10
2 mA
Pulse test
= 2 V
V
CE
I
= 0
B
Tc = 25 °C
1.6 2.0
0
0.4
0.8
1.2
0.3
0.003 0.01 0.03
0.1
1
3
Collector to Emitter Voltage V (V)
CE
Collector Current
I
(A)
C
2SD2484
Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
vs. Base Current
10
3
Pulse test
Ta = 25 °C
V
BE(sat)
Ta=–25°C
1
3
1
75°C
25°C
0.3
0.1
25°C
I
= 2 A
1 A
C
75°C
0.5 A
0.3
0.1
V
CE(sat)
Ta=–25°C
0.03
0.01
Pulse test
0.03
0.01
I
= 20 I
B
C
0.003
0.3
0.003 0.01 0.03
0.1
1
3
1
3
10
30
100 300 1000
Collector Current I (A)
C
Base Current I (mA)
B
Collector Output Capacitance vs.
Collector to Base Voltage
Gain Bandwidth Product vs.
Collector Current
100
1000
300
30
10
100
30
10
Pulse test
3
1
V
= 2 V
CE
I
= 0
E
Ta = 25 °C
3
1
f = 1 MHz
Ta = 25 °C
1
3
10
30
100
(V)
0.3
0.03 0.01 0.3
0.1
1
3
Collector Current
I
(A)
Collector to Base Voltage V
C
CB
2SD2484
Typical Transfer Characteristics
2.0
1.6
1.2
0.8
0.4
Pulse test
= 2 V
V
CE
Ta = 25 °C
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
(V)
BE
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