2SD2488P [ISC]
Transistor;
| 型号： | 2SD2488P |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2488
DESCRIPTION
·With TO-3PN package
·DARLINGTON
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
200
200
5
UNIT
V
Open base
V
Open collector
V
15
A
IB
Base current
1
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
130
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2488
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=30mA ;IB=0
200
IC=10A ;IB=10mA
IC=10A ;IB=10mA
VCB=200V IE=0
2.5
3.0
V
V
100
μA
μA
IEBO
VEB=5V; IC=0
100
hFE
DC current gain
IC=10A ; VCE=4V
IE=0 ; VCB=10V;f=1MHz
IE=-2A ; VCE=12V
5000
30000
Cob
Output capacitance
120
70
pF
fT
Transition frequency
MHz
hFE Classifications
O
P
Y
5000-12000
6500-20000
15000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2488
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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