2SD2486R [ETC]
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FP ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 4A I（C ） | TO- 220FP\n
| 型号： | 2SD2486R |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220FP
|
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD2486
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
10.0±0.2
5.5±0.2
4.2±0.2
Features
■
2.7±0.2
●
High forward current transfer ratio hFE which has satisfactory
linearity
φ3.1±0.1
●
Low collector to emitter saturation voltage VCE(sat)
●
Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
1.4±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
+0.2
–0.1
0.5
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.8±0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
60
2.54±0.25
60
V
7
V
5.08±0.5
1
2
3
8
A
1:Base
IC
4
A
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
Base current
IBP
2
A
Collector power TC=25°C
25
PC
W
dissipation
Ta=25°C
2
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
10
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 60V, IE = 0
VEB = 7V, IC = 0
C = 10mA, IB = 0
IEBO
10
Collector to emitter voltage
VCEO
I
60
500
60
*
hFE1
VCE = 2V, IC = 0.8A
1000
2000
Forward current transfer ratio
hFE2
VCE = 2V, IC = 2A
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = 2A, IB = 50mA
0.5
1.5
V
V
IC = 2A, IB = 50mA
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = 10V, IC = 0.5A, f = 10MHz
70
0.5
3.6
1.1
MHz
µs
IC = 2A, IB1 = 50mA, IB2 = –50mA,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
R
500 to 1200 800 to 2000
1
Power Transistors
2SD2486
PC — Ta
IC — VCE
VCE(sat) — IC
30
3.0
2.5
2.0
1.5
1.0
0.5
0
100
IB=5.0mA
IC/IB=40
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
4.0mA
30
10
(1)
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
25
20
15
10
5
3.0mA
2.5mA
TC=100˚C
2.0mA
1.5mA
3
1
1.0mA
25˚C
(2)
0.3
0.1
–25˚C
0.5mA
(3)
(4)
0.03
0.01
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01 0.03
0.1
0.3
1
3
10
(
)
(
V
)
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) — IC
hFE — IC
fT — IC
100
100000
10000
IC/IB=40
VCE=2V
VCE=10V
f=10MHz
TC=25˚C
30
10
30000
3000
1000
10000
25˚C
3
1
3000
1000
300
100
TC=100˚C
25˚C
TC=–25˚C
100˚C
–25˚C
0.3
0.1
300
100
30
10
0.03
0.01
30
10
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
(
A
)
(
A
)
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
ton, tstg, tf — IC
Area of safe operation (ASO)
10000
100
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40 (IB1=–IB2
VCC=50V
IE=0
f=1MHz
TC=25˚C
Non repetitive pulse
TC=25˚C
3000
1000
30
10
)
30
10
TC=25˚C
ICP
IC
t=1ms
300
100
3
1
3
1
tstg
10ms
tf
DC
ton
30
10
0.3
0.1
0.3
0.1
3
1
0.03
0.01
0.03
0.01
0.1
0.3
1
3
10
30
100
0
1
2
3
4
5
1
3
10
30
100 300 1000
(
V
)
(
A
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
Collector current IC
2
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