2SD1934R [ETC]
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92 ; 晶体管| BJT | NPN | 20V V( BR ) CEO | 5A I(C ) | TO- 92\n型号: | 2SD1934R |
厂家: | ETC |
描述: | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-92
|
文件: | 总3页 (文件大小:49K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Transistor
2SD1934
Silicon NPN epitaxial planer type
For low-frequency power amplification
For stroboscope
Unit: mm
5.0±0.2
4.0±0.2
Features
■
●
Low collector to emitter saturation voltage VCE(sat)
.
●
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
●
Allowing supply with the radial taping.
0.7±0.1
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
0.45+–00..115
1.27
0.45+–00..115
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
40
1.27
20
V
7
V
1:Emitter
2:Collector
3:Base
TO–92NL Package
1
2 3
8
A
2.54±0.15
IC
5
A
Collector power dissipation
Junction temperature
Storage temperature
PC
1
W
˚C
˚C
Tj
150
Tstg
–55 ~ +150
Electrical Characteristics (Ta=25˚C)
■
Parameter
Symbol
ICBO
Conditions
min
typ
max
0.1
Unit
µA
µA
V
Collector cutoff current
Emitter cutoff current
VCB = 10V, IE = 0
IEBO
VEB = 7V, IC = 0
0.1
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = 1mA, IB = 0
20
7
IE = 10µA, IC = 0
V
*1
hFE1
hFE2
VCE = 2V, IC = 0.5A*2
VCE = 2V, IC = 2A*2
230
150
600
1
Forward current transfer ratio
Collector to emitter saturation voltage VCE(sat)
IC = 3A, IB = 0.1A*2
VCB = 6V, IE = –50mA, f = 200MHz
VCB = 20V, IE = 0, f = 1MHz
V
MHz
pF
Transition frequency
fT
150
Collector output capacitance
Cob
50
*2 Pulse measurement
*1
h
Rank classification
FE1
Rank
hFE1
Q
R
230 ~ 380
340 ~ 600
1
Transistor
2SD1934
PC — Ta
IC — VCE
IC — VBE
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
2.0
1.6
1.2
0.8
0.4
0
6
5
4
3
2
1
0
Ta=25˚C
IB=7mA
VCE=2V
25˚C
Ta=75˚C
–25˚C
6mA
5mA
4mA
3mA
2mA
1mA
0
20 40 60 80 100 120 140 160
0
0.4
0.8
1.2
1.6
2.0
2.4
0
0.4
0.8
1.2
1.6
2.0
(
)
(
V
)
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IE
10
600
400
350
300
250
200
150
100
50
IC/IB=30
VCB=6V
Ta=25˚C
VCE=2V
3
1
500
400
300
200
100
0
Ta=75˚C
25˚C
0.3
0.1
Ta=75˚C
25˚C
–25˚C
–25˚C
0.03
0.01
0.003
0.001
0
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
( )
A
(
A
)
( )
Emitter current IE A
Collector current IC
Collector current IC
Cob — VCB
100
80
60
40
20
0
IE=0
f=1MHz
Ta=25˚C
1
3
10
30
100
( )
V
Collector to base voltage VCB
2
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2001 MAR
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