2SD1935-CT7 [KEXIN]
NPN Transistors;
| 型号： | 2SD1935-CT7 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1935
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Large current capacity.
● Low collector to emitter saturation voltage.
● Complimentary to 2SB1295
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
15
Unit
V
VCBO
VCEO
VEBO
15
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
800
3
mA
A
I
CP
P
C
200
150
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 1 mA， RBE= ∞
= 100μA， I = 0
CB= 12 V , I = 0
EB= 4V , I =0
=5 mA, I =0.5mA
Min
15
15
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
25
uA
I
C
I
I
I
C
B
10
100
0.9
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
mV
V
C
=400 mA, I
=400 mA, I
B
=20mA
=20mA
200
1.2
900
V
C
B
V
V
V
V
CE= 2V, I
CE= 2V, I
C
= 50mA
135
80
hFE
C= 800mA
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
E=0,f=1MHz
10
pF
f
CE= 2V, I = 50mA
C
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1935-CT5
135-270
CT5
2SD1935-CT6
200-400
CT6
2SD1935-CT7
300-600
CT7
2SD1935-CT8
450-900
CT8
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1935
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1935
■ Typical Characterisitics
3
www.kexin.com.cn
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