2SD1935 [KEXIN]
NPN Epitaxial Planar Silicon Transistors; NPN外延平面硅晶体管
| 型号： | 2SD1935 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Epitaxial Planar Silicon Transistors |
| 文件： | 总1页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors
2SD1935
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Large current capacity.
Low collector to emitter saturation voltage.
Very small-sized package permitting sets to be made
smaller and slimer.
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
15
15
V
5
V
0.8
3
A
Collector current (pulse)
Collector dissipation
ICP
A
PC
200
mW
Jumction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Symbol
Testconditons
Min
135
Typ
Max
100
100
900
Unit
nA
ICBO
IEBO
hFE
fT
VCB = 12V , IE = 0
VEB = 4V , IC = 0
nA
VCE = 2V , IC = 50mA
VCE = 2V , IC = 50mA
VCB = 10V , f = 1MHz
Gain bandwidth product
Output capacitance
200
10
MHz
pF
mV
mV
V
Cob
Collector-emitter saturation voltage
VCE(sat) IC = 5mA , IB = 0.5mA
VCE(sat) IC = 400mA , IB = 20mA
VBE(sat) IC = 400mA , IB =20mA
V(BR)CBO IC = 10ìA , IE = 0
10
25
200
1.2
100
0.9
Base-to-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Emitter-to-base breakdown voltage
15
15
5
V
V
IC = 1mA , RBE =
IE = 10ìA , IC = 0
V(BR)CEO
V(BR)EBO
V
hFE Classification
CT
Marking
Rank
hFE
5
6
7
8
135 270
200 400
300 600
450 900
1
www.kexin.com.cn
相关型号：
©2020 ICPDF网 联系我们和版权申明