2SC5707TP [ETC]
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-251VAR ; 晶体管| BJT | NPN | 50V V（ BR ） CEO | 8A I（C ） | TO- 251VAR\n
| 型号： | 2SC5707TP |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-251VAR
|
| 文件： | 总5页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6913
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2040 / 2SC5707
High Current Switching Applications
Applications
Package Dimensions
unit : mm
•
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
2045B
[2SA2040 / 2SC5707]
Features
6.5
5.0
4
2.3
0.5
• Adoption of FBET, MBIT process.
•
Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
0.85
0.7
1.2
0.6
0.5
1 : Base
2 : Collector
3 : Emitter
1
2
3
4 : Collector
SANYO : TP
2.3
2.3
Package Dimensions
unit : mm
2044B
[2SA2040 / 2SC5707]
6.5
2.3
5.0
4
0.5
0.5
0.85
1
2
3
1 : Base
0.6
1.2
0 to 0.2
2 : Collector
3 : Emitter
4 : Collector
2.3
2.3
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30101 TS IM TA-3233 No.6913-1/5
2SA2040/2SC5707
Specifications
Note*( ) : 2SA2040
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
(--50)80
(--50)80
(--)50
(--)6
CBO
V
V
CES
CEO
EBO
V
V
V
V
I
C
(--)8
A
Collector Current (Pulse)
Base Current
I
(--)11
(--)2
A
CP
I
B
A
1.0
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
15
Junction Temperature
Storage Temperature
Tj
Tstg
150
−55 to +150
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
typ
max
I
V
V
V
V
V
=(--)40V, I =0
(--)0.1
(--)0.1
560
µA
µA
CBO
CB
EB
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
I
=(--)4V, I =0
C
EBO
h
FE
=(--)2V, I =(--)500mA
200
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)10V, I =(--)500mA
C
(290)330
(50)28
MHz
pF
mV
mV
V
T
Cob
=(--)10V, f=1MHz
I
I
=(--)3.5A, I =(--)175mA
(--230)160 (--390)240
(--240)110 (--400)170
C
B
Collector-to-Emitter Saturation Voltage
V
V
(sat)
(sat)
CE
=(--)2A, I =(--)40mA
C
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
IC=(--)2A, IB=(--)40mA
(--)0.83
(--)1.2
BE
V
I
C
I
C
I
C
=(--)10µA, I =0
(--50)80
80
V
(BR)CBO
E
V
=(--)100µA, R =∞
BE
V
(BR)CES
(BR)CEO
(BR)EBO
V
V
=(--)1mA, R =∞
BE
(--)50
(--)6
V
I =(--)10µA, I =0
E
V
C
t
See specified test circuit.
See specified test circuit.
See specified test circuit.
(40)30
(225)420
25
ns
ns
ns
on
Storage Time
t
stg
Fall Time
t
f
Swicthing Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
I
B2
OUTPUT
INPUT
R
B
R
L
V
R
+
+
50Ω
100µF
470µF
V
= --5V
V
=25V
CC
BE
20I = --20I = I =2.5A
B1 B2
C
For PNP, the polarity is reversed.
No.6913-2/5
2SA2040/2SC5707
I
-- V
--90mA
--80mA
--70mA
I
-- V
C CE
C
CE
7
--7
--6
--5
--4
--3
--2
2SA2040
90mA
6
5
4
3
2
--60mA
--10mA
--1
0
1
0
I =0
I =0
B
B
2SC5707
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, V
-- V IT00206
Collector-to-Emitter Voltage, V
-- V IT00207
CE
CE
I
-- V
I
-- V
C BE
C
BE
8
7
6
5
4
3
2
--8
--7
--6
--5
--4
--3
--2
2SA2040
2SC5707
V
= --2V
V
=2V
CE
CE
1
0
--1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT00209
IT00208
Base-to-Emitter Voltage, V
BE
-- V
Base-to-Emitter Voltage, V -- V
BE
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SA2040
= --2V
2SC5707
7
5
7
5
V
V
=2V
CE
CE
Ta=75°C
3
2
3
2
25°C
--25°C
--25°C
100
7
100
7
5
5
3
2
3
2
10
0.01
10
2
3
5
7
2
3
5
7
2
3
5 7
10
IT00211
2
3
5
7
2
3
5
7
2
3
5 7
0.1
1.0
--0.01
--0.1
--1.0
--10
IT00210
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
CE
C
CE
C
--1000
1000
2SA2040
2SC5707
/ I =20
7
5
7
5
I
/ I =20
I
C
B
C
B
3
2
3
2
100
--100
7
5
7
5
3
2
3
2
10
--10
7
5
7
5
3
2
3
2
--1.0
--0.01
1.0
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
IT00212
0.1
1.0
10
IT00214
Collector Current, I -- A
Collector Current, I -- A
C
C
No.6913-3/5
2SA2040/2SC5707
V
(sat) -- I
V
(sat) -- I
CE
CE
C
C
10000
--10000
2SC5707
/ I =50
2SA2040
7
5
7
5
I
I
/ I =50
C
B
C
B
3
2
3
2
--1000
1000
7
5
7
5
3
2
3
2
--100
100
7
5
7
5
25°C
3
2
3
2
25°C
--10
--0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
IT00213
0.1
1.0
10
IT00215
Collector Current, I -- A
Collector Current, I -- A
V
(sat) -- CI
V
(sat) -- CI
BE
C
BE
C
--10000
10000
2SA2040
2SC5707
7
5
7
5
I
/ I =50
I
/ I =50
C
B
C
B
3
2
3
2
--1000
1000
Ta= --25°C
75°C
Ta= --25°C
75°C
7
5
7
5
25°C
25°C
3
2
3
2
100
--100
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
IT00217
--0.01
--0.1
--1.0
--10
IT00216
0.01
0.1
1.0
Collector Current, I -- A
Collector Current, I -- A
C
C
Cob -- V
Cob -- V
CB
CB
5
5
2SA2040
f=1MHz
2SC5707
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
7
5
7
5
3
2
3
2
5
7
2
3
5
7
2
3
5
7
2
3
5
5
7
2
3
5
7
2
3
5
7
2
3
5
--0.1
--1.0
--10
0.1
1.0
10
Collector-to-Base Voltage, V
-- V
IT00218
Collector-to-Base Voltage, V
-- V
IT00219
CB
CB
f
-- I
f
-- I
T C
T
C
1000
1000
2SC5707
=10V
2SA2040
7
5
7
5
V
V
= --10V
CE
CE
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
5
7
2
3
5
7
2
3
5
7
2
3
5 7
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.01
0.1
1.0
10
IT00221
--0.01
--0.1
--1.0
--10
IT00220
Collector Current, I -- A
Collector Current, I -- A
C
C
No.6913-4/5
2SA2040/2SC5707
A S O
P
-- Ta
C
2
1.2
I =11A
CP
100ms
10ms
2SA2040 / 2SC5707
10
7
5
I =8A
C
1.0
0.8
0.6
0.4
3
2
1.0
7
5
3
2
0.1
7
5
2SA2040 / 2SC5707
Tc=25°C
Single Puls
0.2
0
3
2
For PNP, the minus sign(--)is omitted
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
20
40
60
80
100
120
140
160
1.0
10
100
IT02971
IT02972
Collector-to-Emitter Voltage, V
-- V
Ambient Temperature, Ta -- °C
CE
P
-- Tc
C
18
2SA2040 / 2SC5707
16
15
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
IT02973
Case Temperature, Tc -- °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2001. Specifications and information herein are subject to
change without notice.
PS No.6913-5/5
相关型号：
2SC5712(TE12L,ZF)
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA
©2020 ICPDF网 联系我们和版权申明