2SC5710FA [ETC]
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 9A I(C) | TO-252VAR ; 晶体管| BJT | NPN | 30V V（ BR ） CEO | 9A I（C ） | TO- 252VAR\n
| 型号： | 2SC5710FA |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 9A I(C) | TO-252VAR
|
| 文件： | 总5页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENN6915
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2044 / 2SC5710
DC / DC Converter Applications
Package Dimensions
Applications
•
Relay drivers, lamp drivers, motor drivers, strobes.
unit : mm
2045B
[2SA2044 / 2SC5710]
Features
6.5
5.0
4
• Adoption of FBET and MBIT processes.
2.3
0.5
•
Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
0.85
0.7
1.2
0.6
0.5
1 : Base
2 : Collector
3 : Emitter
1
2
3
4 : Collector
SANYO : TP
2.3
2.3
unit : mm
2044B
[2SA2044 / 2SC5710]
6.5
2.3
5.0
4
0.5
0.5
0.85
1
2
3
0.6
1 : Base
1.2
0 to 0.2
2 : Collector
3 : Emitter
4 : Collector
2.3
2.3
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52101 TS IM TA-3249 No.6915-1/5
2SA2044 / 2SC5710
Specifications
( ) : 2SA2044
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
Conditions
Ratings
Unit
V
V
CBO
V
CEO
V
EBO
(--30)40
(--)30
(--)6
V
V
I
C
(--)9
A
Collector Current (Pulse)
Base Current
I
(--)12
(--)1.2
1
A
CP
I
B
A
W
W
°C
°C
Collector Dissipation
P
C
Tc=25°C
15
Junction Temperature
Storage Temperature
Tj
Tstg
150
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Collector Cutoff Current
Symbol
Conditions
Unit
min
typ
max
I
V
V
V
V
V
=(--)30V, I =0
(--)0.1
(--)0.1
560
µA
µA
CBO
CB
EB
CE
CE
CB
E
Emitter Cutoff Current
DC Current Gain
I
=(--)4V, I =0
C
EBO
h
FE
=(--)2V, I =(--)500mA
200
C
Gain-Bandwidth Product
Output Capacitance
f
=(--)10V, I =(--)500mA
C
(290)320
(52)40
MHz
pF
mV
mV
V
T
Cob
=(--)10V, f=1MHz
I
C
I
C
I
C
I
C
I
C
=(--)4A, I =(--)200mA
(
-- 200)180
-- 170)130
(--)0.85
(
-- 340)270
-- 290)195
(--)1.2
B
Collector-to-Emitter Saturation Voltage
V
V
(sat)
(sat)
CE
=(--)2.5A, I =(--)50mA
(
(
B
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
=(--)2.5A, I =(--)50mA
B
BE
V
V
V
=(--)10µA, I =0
(--30)40
(--)30
(--)6
V
(BR)CBO
(BR)CEO
(BR)EBO
E
=(--)1mA, R =∞
BE
V
I =(--)10µA, I =0
E
V
C
t
See specified test circuit.
See specified test circuit.
See specified test circuit.
30
(190)320
15
ns
ns
ns
on
Storage Time
t
stg
Fall Time
t
f
Swicthing Time Test Circuit
I
B1
PW=20µs
D.C.≤1%
OUTPUT
I
B2
INPUT
R
B
V
R
R
L
+
+
50Ω
100µF
= --5V
470µF
V
V
=12V
CC
BE
I
=20I = --20I =2.5A
C B1 B2
For PNP, the polarity is reversed.
No.6915-2/5
2SA2044 / 2SC5710
I
-- V
I
-- V
C CE
C
CE
8
--8
--7
--6
--5
--4
--3
--2
2SA2044
90mA
80mA
--90mA
7
6
5
--80mA
20mA
10mA
--30mA
4
3
--20mA
2
--10mA
1
--1
0
I =0
B
I =0
B
2SC5710
0
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
0.4
0.8
1.2
1.6
2.0
IT00188
IT00189
Collector-to-Emitter Voltage, V
CE
-- V
Collector-to-Emitter Voltage, V
CE
-- V
I
-- V
I
-- V
C BE
C
BE
--8
--7
--6
--5
--4
8
7
6
5
4
2SC5710
=2V
2SA2044
= --2V
V
CE
V
CE
25°C
25°C
--3
--2
3
2
--1
0
1
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT00191
Base-to-Emitter Voltage, V
BE
-- V
IT00190
Base-to-Emitter Voltage, V
BE
-- V
h
FE
-- I
h
FE
-- I
C
C
1000
1000
2SA2044
= --2V
2SC5710
7
5
7
5
V
V
CE
=2V
CE
Ta=75°C
--25°C
Ta=75°C
25°C
--25°C
3
2
3
2
25°C
100
100
7
5
7
5
3
2
3
2
10
--0.01
10
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--10
IT00192
0.1
1.0
10
--0.1
--1.0
Collector Current, I -- A
IT00193
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
CE C
CE
C
--1000
1000
2SA2044
2SC5710
7
5
7
5
I
C
/ I =20
B
I
C
/ I =20
B
3
2
3
2
--100
100
7
5
7
5
3
2
3
2
25°C
10
--10
25°C
7
5
7
5
3
2
3
2
--1.0
1.0
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.01
--0.1
--1.0
--10
IT00194
0.1
1.0
10
IT00196
Collector Current, I -- A
Collector Current, I -- A
C
C
No.6915-3/5
2SA2044 / 2SC5710
V
(sat) -- I
C
V
(sat) -- I
CE
CE
C
--1000
1000
2SC5710
/ I =50
2SA2044
7
5
7
I
I
/ I =50
C
B
C
B
5
3
2
3
2
--100
100
7
5
7
5
25°C
3
2
3
2
25°C
--10
--0.01
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
IT00195
0.01
0.1
1.0
10
IT00197
Collector Current, I -- A
Collector Current, I -- A
C
C
V
(sat) -- I
V
(sat) -- I
BE
C
BE
C
--10
10
2SC5710
2SA2044
7
5
7
5
I
/ I =50
I
/ I =50
C
B
C
B
3
2
3
2
--1.0
1.0
Ta= --25°C
75°C
7
5
7
5
75°C
25°C
25°C
3
2
3
2
--0.1
--0.01
0.1
0.01
2
3
5
7
2
3
5
7
2
3
5 7
10
IT00199
2
3
5
7
2
3
5
7
2
3
5 7
--10
0.1
1.0
--0.1
--1.0
Collector Current, I -- A
Collector Current, I -- A
C
IT00198
C
Cob -- V
Cob -- V
CB
CB
5
5
2SA2044
f=1MHz
2SC5710
f=1MHz
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
7
5
7
5
3
2
3
2
5
7
2
3
5
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5 7
--0.1
--1.0
--10
--100
IT00200
0.1
1.0
10
100
IT00201
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
-- V
CB
CB
f
-- I
f
-- I
C
T
C
T
1000
1000
2SC5710
2SA2044
7
5
7
5
V
=10V
V
CE
= --10V
CE
3
2
3
2
100
100
7
5
7
5
3
2
3
2
10
10
5
7
2
3
5
7
2
3
5
7
2
3
5
7
5
7
2
3
5
7
2
3
5
7
2
3
5 7
0.01
0.1
1.0
10
IT00203
--0.01
--0.1
--1.0
--10
IT00202
Collector Current, I -- A
Collector Current, I -- A
C
C
No.6915-4/5
2SA2044 / 2SC5710
A S O
P
-- Ta
C
1.2
3
2
2SA2044 / 2SC5710
10ms
100ms
1ms
I =12A
CP
10
7
5
1.0
0.8
0.6
0.4
I =9A
C
3
2
1.0
7
5
3
2
0.1
7
5
2SA2044 / 2SC5710
Tc=25°C
Single pulse
0.2
0
3
2
For PNP, minus sign is omitted
0.01
0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
0.1
1.0
10
-- V IT03039
Ambient Temperature, Ta -- °C
Collector-to-Emitter Voltage, V
IT03040
CE
P
-- Tc
C
18
2SA2044 / 2SC5710
16
15
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT03041
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2001. Specifications and information herein are subject
to change without notice.
PS No.6915-5/5
相关型号：
2SC5712(TE12L,ZF)
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
TOSHIBA
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