2SC5712 [TOSHIBA]
TOSHIBA Transistor Silicon NPN Epitaxial Type; 东芝晶体管NPN硅外延型
| 型号： | 2SC5712 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type |
| 文件： | 总5页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC5712
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5712
Industrial Applications
Unit: mm
High-Speed Switching Applications
DC-DC Converter Applications
DC-AC Converter Applications
•
•
•
High DC current gain: h
= 400 to 1000 (I = 0.3 A)
C
FE
Low collector-emitter saturation voltage: V
= 0.14 V (max)
CE (sat)
High-speed switching: t = 120 ns (typ.)
f
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
100
80
V
V
CBO
V
CEX
CEO
EBO
Collector-emitter voltage
V
V
50
Emitter-base voltage
7
V
DC
Collector current
Pulse
I
3.0
5.0
300
1.0
2.5
150
C
A
I
CP
JEDEC
JEITA
―
Base current
I
mA
W
B
SC-62
2-5K1A
DC
P
C
Collector power
TOSHIBA
dissipation
(Note)
t = 10 s
Weight: 0.05 g (typ.)
Junction temperature
T
°C
°C
j
Storage temperature range
T
−55 to 150
stg
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Symbol
Test Condition
= 100 V, I = 0
Min
Typ.
Max
Unit
I
V
V
100
100
nA
nA
V
CBO
CB
EB
E
Emitter cut-off current
I
= 7 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= 10 mA, I = 0
50
400
200
C
B
h
h
(1)
(2)
V
V
= 2 V, I = 0.3 A
1000
FE
CE
CE
C
DC current gain
= 2 V, I = 1 A
FE
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
V
I
I
= 1 A, I = 20 mA
0.14
1.10
V
V
CE (sat)
BE (sat)
C
C
B
V
= 1 A, I = 20 mA
B
C
V
= 10 V, I = 0, f = 1 MHz
13
40
500
120
pF
ob
CB
E
t
See Figure 1 circuit diagram.
r
∼
−
Switching time
V
I
30 V, R = 30 Ω
ns
Storage time
Fall time
t
CC
L
stg
= −I = 33.3 mA
t
f
B1
B2
1
2001-12-17
2SC5712
Marking
V
CC
20 µs
2 A
I
I
I
B1
B1
B2
Output
Input
B2
I
Duty cycle < 1%
Figure 1 Switching Time Test Circuit
& Timing Chart
2
2001-12-17
2SC5712
I
– V
h
– I
C
CE
FE C
4
3
2
1
0
10000
1000
100
Common emitter
Common emitter
Ta = 25°C
V
CE
= 2 V
Single nonrepetitive
pulse
Single nonrepetitive
pulse
70
60
50
Ta = 100°C
40
30
25
20
−55
10
5
2
I
= 1 mA
B
10
0.001
0.01
0.1
1
0
0.2
0.4
0.6
0.8
(V)
1
Collector current
I
(A)
C
Collector-emitter voltage
V
CE
V
– I
V
– I
BE (sat) C
CE (sat)
C
1
0.1
100
10
1
Common emitter
β = 50
Common emitter
I
/I = 50
C B
Single nonrepetitive
pulse
Single nonrepetitive
pulse
25
Ta = 100°C
−55
25
−55
0.01
Ta = 100°C
0.001
0.1
0.001
0.01
0.1
1
0.001
0.01
0.1
1
Collector current
I
C
(A)
Collector current
I
C
(A)
V
– I
C
BE
3
2
1
0
Common emitter
= 2 V
Single nonrepetitive
pulse
V
CE
Ta = 100°C
25
−55
0
0.4
0.8
1.2
(A)
1.6
Collector current
I
C
3
2001-12-17
2SC5712
r
th
– t
w
1000
100
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
(s)
w
Safe Operating Area
10
1
I
max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 µs♦
C
10 µs♦
I
max (continuous)
C
10 s♦*
100 ms♦*
DC operation *
(Ta = 25°C)
♦: Single nonrepetitive pulse
Ta = 25°C
0.1
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1
1
10
V
100
Collector-emitter voltage
(V)
CE
4
2001-12-17
2SC5712
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
5
2001-12-17
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