2SC2396F [ETC]
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92 ; 晶体管| BJT | NPN | 60V V（ BR ） CEO | 100MA I（C ） | TO- 92\n
| 型号： | 2SC2396F |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-92
|
| 文件： | 总5页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2396, 2SC2543, 2SC2544
Silicon NPN Epitaxial
ADE-208-1062A (Z)
2nd. Edition
Mar. 2001
Application
•
Low frequency amplifier
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SC2396, 2SC2543, 2SC2544
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
2SC2396
60
2SC2543
90
2SC2544
120
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
60
90
120
V
5
5
5
V
100
–100
400
150
100
–100
400
150
100
mA
mA
mW
°C
Emitter current
IE
–100
400
Collector power dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
–55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC2396
2SC2543
2SC2544
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
V(BR)CBO 60
—
—
—
—
—
—
90
90
5
—
—
—
—
—
—
120
120
5
—
—
—
—
—
—
V
V
V
IC = 10 µA, IE = 0
breakdown voltage
Collector to emitter
breakdown voltage
V(BR)CEO 60
IC = 1 mA,
RBE = ∞
Emitter to base
V(BR)EBO
5
IE = 10 µA, IC = 0
breakdown voltage
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE
—
—
—
—
0.1
0.1
—
—
—
—
—
0.1
0.1
—
—
—
—
—
0.1
0.1
800
µA VCB = 50 V, IE = 0
µA VEB = 2 V, IC = 0
—
1
*
250
1200 250
1200 250
VCE = 12 V,
IC = 2 mA
Collector to emitter
saturation voltage
VCE(sat)
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
0.2
—
—
—
—
—
—
—
—
0.2
—
—
—
V
V
IC = 10 mA,
IB = 1 mA
Base to emitter voltage VBE
0.6
90
3.0
0.6
90
3.0
0.6
90
3.0
VCE = 12 V,
IC = 2 mA
Gain bandwidth product fT
MHz VCE = 12 V,
IC = 2 mA
Collector output
capacitance
Cob
pF VCB = 10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SC2396, 2SC2543 and 2SC2544 are grouped by hFE1 as follows.
D
E
F
2SC2396, 2SC2543
2SC2544
250 to 500 400 to 800 600 to 1200
250 to 500 400 to 800
—
See characteristic curves of 2SC2545, 2SC2546 and 2SC2547.
2
2SC2396, 2SC2543, 2SC2544
Maximum Collector Dissipation Curve
600
400
200
50
100
150
0
Ambient Temperature Ta (°C)
3
2SC2396, 2SC2543, 2SC2544
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.60 Max
0.55Max
0.5Max
1.27
2.54
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
0.25 g
Mass (reference value)
4
2SC2396, 2SC2543, 2SC2544
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5
相关型号：
2SC2396FRR
Small Signal Bipolar Transistor, 0.1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92(1), 3 PIN
HITACHI
2SC2404TMG
RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
PANASONIC
©2020 ICPDF网 联系我们和版权申明