2SA743B [ETC]

BJT ; BJT\n
2SA743B
型号: 2SA743B
厂家: ETC    ETC
描述:

BJT
BJT\n

晶体 晶体管 放大器 局域网
文件: 总7页 (文件大小:31K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SA743, 2SA743A  
Silicon PNP Epitaxial  
ADE-208-853 (Z)  
1st. Edition  
Sep. 2000  
Application  
Low frequency power amplifier complementary pair with 2SC1212 and 2SC1212A  
Outline  
TO-126 MOD  
1. Emitter  
2. Collector  
3. Base  
1
2
3
Absolute Maximum Ratings (Ta = 25°C)  
Ratings  
Item  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
2SA743  
2SA743A  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
–50  
–80  
–50  
–80  
V
–4  
–4  
V
–1  
–1  
A
Collector power dissipation  
PC  
0.75  
0.75  
W
PC*1  
8
8
Junction temperature  
Tj  
150  
150  
°C  
°C  
Storage temperature  
Tstg  
–55 to +150  
–55 to +150  
Note: 1. Value at TC = 25°C.  
2SA743, 2SA743A  
Electrical Characteristics (Ta = 25°C)  
2SA743  
2SA743A  
Item  
Symbol Min Typ Max Min Typ Max Unit Test conditions  
Collector to base  
breakdown voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
–50  
–50  
–4  
–80  
–80  
–4  
120  
V
IC = –1 mA, IE = 0  
IC = –10 mA, RBE = ∞  
IE = –1 mA, IC = 0  
Collector to emitter  
breakdown voltage  
V
Emitter to base  
breakdown voltage  
V
Collector cutoff current ICER  
–20  
µA  
VCE = –50 V, RBE = 1  
kΩ  
ICER  
DC current tarnsfer ratio hFE*1  
hFE  
–20  
200  
VCE = –80 V, RBE = 1  
kΩ  
60  
20  
120 200  
60  
20  
VCE = –4 V, IC = –50  
mA  
VCE = –4 V, IC = –1 A  
(pulse)  
Base to emitter voltage VBE  
–0.65 –1.0  
–0.75 –1.5  
–0.65 1.0  
V
V
VCE = –4 V, IC = –50  
mA  
Collector to emitter  
saturation voltage  
VCE(sat)  
–0.75 –1.5  
IC = –1 A, IB = –0.1 A  
Gain bandwidth product fT  
120  
120  
MHz VCE = –4 V, IC = –30  
mA  
Note: 1. The 2SA743 and 2SA743A is grouped by hFE as follows.  
B
C
60 to 120  
100 to 200  
2
2SA743, 2SA743A  
Maximum Collector Dissipation Curve  
0.75 W  
Maximum Collector Dissipation Curve  
0.8  
0.6  
0.4  
0.2  
8
6
4
2
0
50  
100  
150  
200  
0
50  
100  
150  
200  
Case temperature TC (°C)  
Ambient temperature Ta (°C)  
Typical Output Characteristics (2)  
Typical Output Charactristics (1)  
1.0  
0.8  
0.6  
0.4  
0.2  
–200  
–160  
–120  
–80  
TC = 25°C  
T
C = 25°C  
–40  
IB = 0  
–3  
Collector to emitter voltage VCE (V)  
IB = 0  
–30  
0
–1  
–2  
–4  
–5  
0
–10  
–20  
–40  
–50  
Collector to emitter voltage VCE (V)  
3
2SA743, 2SA743A  
DC Currnet Transfer Ratio vs.  
Collector Current  
Typical Transfer Characteristics  
180  
160  
140  
120  
100  
80  
VCE = –4 V  
Pulse  
–1.0  
–0.5  
TC = 75°C  
VCE = –4 V  
Pulse  
–0.2  
–0.1  
25  
–0.05  
–25  
–0.02  
–0.01  
60  
–0.010.02 –0.05 –0.1 –0.2  
–0.5 –1.0  
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2  
Base to emitter voltage VBE (V)  
Collector current IC (A)  
4
2SA743, 2SA743A  
Package Dimensions  
5
2SA743, 2SA743A  
Package Dimensions  
Unit: mm  
8.0 ± 0.5  
2.7 ± 0.4  
+0.15  
φ
3.1–0.1  
120°  
1.1  
0.8  
2.29 ± 0.5  
2.29 ± 0.5 0.55  
1.2  
Hitachi Code  
JEDEC  
TO-126 Mod  
EIAJ  
Mass (reference value)  
0.67 g  
6
2SA743, 2SA743A  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
Asia  
: http://semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
: http://sicapac.hitachi-asia.com  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
179 East Tasman Drive, Dornacher Straβe 3  
Hitachi Europe GmbH  
Electronic Components Group  
Hitachi Asia Ltd.  
Hitachi Tower  
16 Collyer Quay #20-00,  
Singapore 049318  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower,  
San Jose,CA 95134  
D-85622 Feldkirchen, Munich  
World Finance Centre,  
Tel: <1> (408) 433-1990 Germany  
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
Tel : <65>-538-6533/538-8577  
Fax : <65>-538-6933/538-3877  
URL : http://www.hitachi.com.sg  
Harbour City, Canton Road  
Tsim Sha Tsui, Kowloon,  
Hong Kong  
Tel : <852>-(2)-735-9218  
Fax : <852>-(2)-730-0281  
URL : http://www.hitachi.com.hk  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Hitachi Asia Ltd.  
(Taipei Branch Office)  
4/F, No. 167, Tun Hwa North Road,  
Hung-Kuo Building,  
Taipei (105), Taiwan  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 585160  
Tel : <886>-(2)-2718-3666  
Fax : <886>-(2)-2718-8180  
Telex : 23222 HAS-TP  
URL : http://www.hitachi.com.tw  
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.  
Colophon 2.0  
7

相关型号:

ETC

2SA744

isc Silicon PNP Power Transistor
ISC

2SA744

Silicon PNP Power Transistors
SAVANTIC

2SA744

Silicon PNP Power Transistors
JMNIC

2SA745

isc Silicon PNP Power Transistor
ISC

2SA745

Silicon PNP Power Transistors
SAVANTIC

2SA745

Silicon PNP Power Transistors
JMNIC

2SA745A

isc Silicon PNP Power Transistor
ISC

2SA745A

Silicon PNP Power Transistors
SAVANTIC

2SA745A

Silicon PNP Power Transistors
JMNIC

2SA746

2SA746
PANASONIC

2SA746

Silicon PNP Power Transistors
SAVANTIC