06035G473ZAT2A [ETC]

KONDENSATOR 470NF 50V 10ST ; KONDENSATOR 470nF的50V 10ST\n
06035G473ZAT2A
型号: 06035G473ZAT2A
厂家: ETC    ETC
描述:

KONDENSATOR 470NF 50V 10ST
KONDENSATOR 470nF的50V 10ST\n

电容器 PC
文件: 总46页 (文件大小:650K)
下载:  下载PDF数据表文档文件

06035G473Z-MR

CAP. 47NF MINIREEL 500PCS

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16 ETC

06035G683ZAT4A

Capacitor, Ceramic, Chip, General Purpose, 0.068uF, 50V, +80-20%, Y5V, 0603 (1608 mm), Sn/NiBar, -30º ~ +85ºC, 13" Reel

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0 AVX

06035J0R1PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 20% +Tol, 20% -Tol, -/+30ppm/Cel TC, 0.0000001uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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0 AVX

06035J0R3PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 6.6667% +Tol, 6.6667% -Tol, -/+30ppm/Cel TC, 0.0000003uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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0 AVX

06035J0R4BBS

Heterostructure Field Effect Transistor (GaAs HFET)

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1 NXP

06035J0R4PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 5% +Tol, 5% -Tol, -/+30ppm/Cel TC, 0.0000004uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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0 AVX

06035J0R6BS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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2 NXP

06035J0R6PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 3.3333% +Tol, 3.3333% -Tol, -/+30ppm/Cel TC, 0.0000006uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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0 AVX

06035J0R7BBS

Heterostructure Field Effect Transistor (GaAs HFET)

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2 NXP

06035J0R8BBS

Heterostructure Field Effect Transistor (GaAs HFET)

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1 NXP

06035J0R8BS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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1 NXP

06035J0R9BS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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1 NXP

06035J100GBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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1 NXP

06035J100GBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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0 NXP

06035J1R2BBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 8.3333% +Tol, 8.3333% -Tol, -/+30ppm/Cel TC, 0.0000012uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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1 AVX