06035J0R6PBSTR [AVX]
Film Capacitor, Silicon Dioxide And Nitride, 50V, 3.3333% +Tol, 3.3333% -Tol, -/+30ppm/Cel TC, 0.0000006uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT;
| 型号： | 06035J0R6PBSTR |
| 厂家： | 
AVX CORPORATION |
| 描述： | Film Capacitor, Silicon Dioxide And Nitride, 50V, 3.3333% +Tol, 3.3333% -Tol, -/+30ppm/Cel TC, 0.0000006uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT 电容器 |
| 文件： | 总25页 (文件大小：1245K) |
| 下载： | 下载PDF数据表文档文件 |
06035J0R7BBS
Heterostructure Field Effect Transistor (GaAs HFET)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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2
NXP
06035J0R8BBS
Heterostructure Field Effect Transistor (GaAs HFET)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NXP
06035J0R8BS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NXP
06035J0R9BS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NXP
06035J100GBS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NXP
06035J100GBS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
NXP
06035J1R2BBSTR
Film Capacitor, Silicon Dioxide And Nitride, 50V, 8.3333% +Tol, 8.3333% -Tol, -/+30ppm/Cel TC, 0.0000012uF, Surface Mount, 0603, CHIP, ROHS COMPLIANTWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
AVX
06035J1R8BBS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NXP
06035J1R8BBS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
NXP
06035J1R8BS
Gallium Arsenide CATV Integrated Amplifier ModuleWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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1
NXP
06035J1R8BS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
2
NXP
06035J2R0BBS
Heterostructure Field Effect Transistor (GaAs HFET)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
2
NXP
06035J2R2BBS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1
NXP
06035J2R2BBS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
NXP
06035J2R2BS
Heterojunction Bipolar Transistor Technology (InGaP HBT)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
3
NXP
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