06035J2R0BBS [NXP]

Heterostructure Field Effect Transistor (GaAs HFET);


型号：	06035J2R0BBS
厂家：	NXP
描述：	Heterostructure Field Effect Transistor (GaAs HFET)
文件：	总15页 (文件大小：468K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Document Number: MMH3111NT1

Rev. 4.1, 10/2014

Freescale Semiconductor

Technical Data

Heterostructure Field Effect

Transistor (GaAs HFET)

MMH3111NT1

Broadband High Linearity Amplifier

The MMH3111NT1 is a general purpose amplifier that is internally

input and output prematched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 250 to 4000 MHz such as cellular,

PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

250--4000 MHz, 12 dB

22.5 dBm

GaAs HFET GPA

Features



Frequency: 250 to 4000 MHz

P1dB: 22.5 dBm @ 900 MHz

Small--Signal Gain: 12 dB @ 900 MHz

Third Order Output Intercept Point: 44 dBm @ 900 MHz

Single 5 V Supply

Internally Prematched to 50 Ohms

Internally Biased

Cost--effective SOT--89 Surface Mount Plastic Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900

Symbol MHz

2140 3500

MHz MHz Unit

Characteristic

300

Small--Signal Gain

(S21)

-- 1 4

22.5

11.3

-- 1 5

-- 1 9

-- 1 6

-- 1 4

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

Storage Temperature Range

Junction Temperature

stg

--65 to +150

150

C

Output Return Loss

(S22)

Power Output @1dB

Compression

dBm

Third Order Output

Intercept Point

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit tuned

for specified frequency.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



37.5

Case Temperature 95C, 5 Vdc, 150 mA, no RF applied

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

Table 4. Electrical Characteristics (V = 5 Vdc, 900 MHz, T = 25C, 50 ohm system, in Freescale Application Circuit)

Characteristic

Symbol

Min

Typ

Max

—

Unit

Small--Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

IRL

ORL

P1dB

OIP3

—

-- 1 4

22.5

—

Power Output @ 1dB Compression

Third Order Output Intercept Point

Noise Figure

—

dBm

—

3.2

150

—

Supply Current

120

—

190

—

Supply Voltage

Table 5. Functional Pin Description

Number

Pin Function

Ground

RF /DC Supply

out

Figure 1. Functional Diagram

Table 6. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD 22--A114)

Machine Model (per EIA/JESD 22--A115)

Charge Device Model (per JESD 22--C101)

Table 7. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22--A113, IPC/JEDEC J--STD--020

260

C

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

S11

-- 1 0

-- 2 0

S22

-- 4 0 C

= 85C

25C

-- 3 0

= 5 Vdc

-- 4 0

3.5

f, FREQUENCY (GHz)

Figure 2. Small--Signal Gain (S21) versus

Frequency

Figure 3. Input/Output Loss versus Frequency

= 5 Vdc

900 MHz

1960 MHz

2140 MHz

2600 MHz

3500 MHz

= 5 Vdc

0.5

1.5

2.5

, OUTPUT POWER (dBm)

f, FREQUENCY (GHz)

out

Figure 4. Small--Signal Gain versus Output

Power

Figure 5. P1dB versus Frequency

160

140

120

100

= 5 Vdc, 10 dBm per Tone

Two--Tone Measurements, 1 MHz Tone Spacing

, DRAIN VOLTAGE (V)

f, FREQUENCY (GHz)

Figure 6. Drain Current versus Drain Voltage

Figure 7. Third Order Output Intercept Point

versus Frequency

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

= 5 Vdc, f = 900 MHz, 10 dBm per Tone

Two--Tone Measurements, 1 MHz Tone Spacing

f = 900 MHz, 10 dBm per tone

Two--Tone Measurements, 1 MHz Tone Spacing

-- 4 0

4.2

4.4

4.6

4.8

-- 2 0

2 0

4 0

6 0

8 0

100

, DRAIN VOLTAGE (V)

T, TEMPERATURE (_C)

Figure 8. Third Order Output Intercept Point

versus Drain Voltage

Figure 9. Third Order Output Intercept Point

versus Case Temperature

-- 2 5

-- 3 0

= 5 Vdc

f = 900 MHz

1 MHz Tone Spacing

-- 3 5

-- 4 0

-- 4 5

-- 5 0

-- 5 5

-- 6 0

-- 6 5

-- 7 0

120

125

130

135

140

145

150

, OUTPUT POWER (dBm)

T , JUNCTION TEMPERATURE (C)

out

NOTE: The MTTF is calculated with V = 5 Vdc, I = 150 mA

Figure 10. Third Order Intermodulation versus

Output Power

Figure 11. MTTF versus Junction Temperature

-- 3 0

-- 4 0

-- 5 0

-- 6 0

-- 7 0

= 5 Vdc, f = 2140 MHz

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF

= 5 Vdc

f, FREQUENCY (GHz)

, OUTPUT POWER (dBm)

out

Figure 12. Noise Figure versus Frequency

Figure 13. Single--Carrier W--CDMA Adjacent

Channel Power Ratio versus Output Power

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM APPLICATION CIRCUIT: 800--1900 MHz

SUPPLY

OUTPUT

INPUT

DUT

0.347 x 0.058 Microstrip

0.068 x 0.058 Microstrip

0.418 x 0.058 Microstrip

0.089 x 0.058 Microstrip

0.172 x 0.058 Microstrip

PCB

0.403 x 0.058 Microstrip

0.086 x 0.058 Microstrip

0.261 x 0.058 Microstrip

Getek Grade ML200C, 0.031,  = 4.1

Figure 14. 50 Ohm Test Circuit Schematic

S21

S11

S22

-- 1 0

-- 2 0

-- 3 0

-- 4 0

MMG30XX

Rev 2

= 5 Vdc

600

800

1000

1200

1400

1600

1800

2000

f, FREQUENCY (MHz)

Figure 15. S21, S11 and S22 versus Frequency

Figure 16. 50 Ohm Test Circuit Component Layout

Table 8. 50 Ohm Test Circuit Component Designations and Values

Part

Description

47 pF Chip Capacitors

Part Number

06035J470BBS

Manufacturer

AVX

C1, C2

0.1 F Chip Capacitor

1 F Chip Capacitor

0.7 pF Chip Capacitor

0.4 pF Chip Capacitor

56 nH Chip Inductor

12 nH Chip Inductor

0 Ω, 1/10 W Chip Resistor

C0603C104J5RAC

C0603C105J5RAC

06035J0R7BBS

Kemet

AVX

12105J0R4BBS

AVX

HK160856NJ--T

Taiyo Yuden

Vishay

HK160812NJ--T

CRCW06030000FKEA

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM APPLICATION CIRCUIT: 1900--2200 MHz

SUPPLY

OUTPUT

INPUT

DUT

0.347 x 0.058 Microstrip

0.068 x 0.058 Microstrip

0.507 x 0.058 Microstrip

0.172 x 0.058 Microstrip

0.403 x 0.058 Microstrip

0.086 x 0.058 Microstrip

0.261 x 0.058 Microstrip

PCB

Getek Grade ML200C, 0.031,  = 4.1

Figure 17. 50 Ohm Test Circuit Schematic

S21

-- 1 0

-- 2 0

-- 3 0

S11

S22

MMG30XX

Rev 2

= 5 Vdc

1800

1900

2000

2100

2200

2300

f, FREQUENCY (MHz)

Figure 18. S21, S11 and S22 versus Frequency

Figure 19. 50 Ohm Test Circuit Component Layout

Table 9. 50 Ohm Test Circuit Component Designations and Values

Part

Description

0.01 F Chip Capacitors

Part Number

06035J470BBS

Manufacturer

AVX

C1, C2

0.1 F Chip Capacitor

1 F Chip Capacitor

0.7 pF Chip Capacitor

0.4 pF Chip Capacitor

56 nH Chip Inductor

0 Ω, 1/10 W Chip Resistor

C0603C104J5RAC

C0603C105J5RAC

06035J0R7BBS

Kemet

AVX

12105J0R4BBS

AVX

HK160856NJ--T

Taiyo Yuden

Vishay

CRCW06030000FKEA

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM APPLICATION CIRCUIT: 2500--3800 MHz

SUPPLY

OUTPUT

INPUT

DUT

0.347 x 0.058 Microstrip

0.489 x 0.058 Microstrip

0.086 x 0.058 Microstrip

0.097 x 0.058 Microstrip

0.075 x 0.058 Microstrip

0.403 x 0.058 Microstrip

0.347 x 0.058 Microstrip

PCB

Getek Grade ML200C, 0.031,  = 4.1

Figure 20. 50 Ohm Test Circuit Schematic

S21

S11

-- 1 0

-- 2 0

-- 3 0

-- 4 0

-- 5 0

S22

MMG30XX

Rev 2

= 5 Vdc

2400

2700

3000

3300

3600

3900

f, FREQUENCY (MHz)

Figure 21. S21, S11 and S22 versus Frequency

Figure 22. 50 Ohm Test Circuit Component Layout

Table 10. 50 Ohm Test Circuit Component Designations and Values

Part

Description

2 pF Chip Capacitors

Part Number

06035J2R0BBS

Manufacturer

AVX

C1, C2

0.1 F Chip Capacitor

1 F Chip Capacitor

0.8 pF Chip Capacitor

0.4 pF Chip Capacitor

56 nH Chip Inductor

0 Ω, 1/10 W Chip Resistor

C0603C104J5RAC

C0603C105J5RAC

06035J0R8BBS

Kemet

AVX

06035J0R4BBS

AVX

HK160856NJ--T

Taiyo Yuden

Vishay

CRCW06030000FKEA

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

Table 11. Common Source S--Parameters (V = 5 Vdc, T = 25C, 50 Ohm System)

MHz

 

|S |

 

100

150

0.329

0.324

0.322

0.318

0.315

0.313

0.315

0.317

0.319

0.322

0.325

0.329

0.332

0.336

0.339

0.344

0.347

0.351

0.355

0.358

0.362

0.367

0.371

0.375

0.380

0.385

0.391

0.395

0.398

0.401

0.404

0.407

0.410

0.413

0.416

0.419

0.422

0.425

0.428

0.432

0.433

0.434

0.435

--36.383

--37.554

--38.791

--40.072

--41.580

--43.457

--45.793

--48.163

--50.730

--53.308

--55.918

--58.706

--61.512

--64.233

--67.096

--69.960

--72.823

--75.724

--78.553

--81.424

--84.459

--87.372

--90.300

--93.201

--96.015

--98.765

--101.218

--103.291

--105.591

--108.116

--110.631

--113.324

--116.074

--118.856

--121.692

--124.469

--127.201

--130.044

--132.901

--135.666

--138.396

--138.893

--139.420

--139.934

--140.473

4.365

4.337

4.313

4.288

4.266

4.239

4.217

4.196

4.175

4.154

4.136

4.116

4.098

4.078

4.059

4.040

4.019

4.001

3.983

3.964

3.944

3.924

3.903

3.883

3.861

3.837

3.815

3.793

3.773

3.752

3.731

3.710

3.691

3.672

3.654

3.633

3.613

3.592

3.570

3.547

3.525

3.519

3.515

3.509

3.506

165.300

163.880

162.387

160.990

159.673

158.172

156.531

154.804

153.014

151.195

149.346

147.439

145.565

143.660

141.719

139.799

137.852

135.896

133.947

131.996

130.038

128.069

126.129

124.163

122.219

120.287

118.370

116.530

114.664

112.769

110.886

108.972

107.070

105.143

103.215

101.291

99.367

0.116

0.117

0.118

0.119

0.120

4.544

0.161

0.154

0.147

0.143

0.137

0.133

0.130

0.129

0.130

0.131

0.132

0.133

0.132

0.131

0.129

0.128

0.126

0.124

0.123

0.122

0.121

0.120

0.118

0.117

0.115

0.113

0.111

0.110

0.108

0.106

0.104

0.103

--47.926

--47.482

--46.993

--46.565

--46.090

--45.522

--45.093

--44.795

--45.225

--45.763

--46.206

--46.966

--47.749

--48.671

--49.880

--51.046

--52.269

--53.492

--54.989

--56.508

--57.950

--59.716

--61.319

--63.068

--64.878

--66.432

--67.493

--68.218

--69.287

--70.746

--72.539

--74.765

--77.175

--79.613

--82.165

--84.722

--87.462

--90.359

--93.223

--96.005

--99.124

--99.644

--100.212

--100.854

--101.491

3.571

250

2.612

300

1.903

350

1.012

400

0.371

450

--1.047

--2.355

--3.521

--4.643

--5.686

--6.700

--7.693

--8.616

--9.581

--10.489

--11.398

--12.312

--13.198

--14.093

--14.998

--15.903

--16.821

--17.713

--18.623

--19.497

--20.349

--21.202

--22.024

--22.896

--23.793

--24.719

--25.638

--26.594

--27.518

--28.483

--29.461

--30.414

--31.362

--32.353

--33.317

--33.518

--33.707

--33.908

--34.094

500

550

600

650

700

750

800

850

900

950

1000

1050

1100

1150

1200

1250

1300

1350

1400

1450

1500

1550

1600

1650

1700

1750

1800

1850

1900

1950

2000

2050

2100

2150

2160

2170

2180

2190

97.431

95.510

93.588

91.656

91.287

90.904

90.532

90.142

(continued)

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

50 OHM TYPICAL CHARACTERISTICS

Table 11. Common Source S--Parameters (V = 5 Vdc, T = 25C, 50 Ohm System) (continued)

MHz

 

|S |

 

2200

2250

2300

2350

2400

2450

2500

2550

2600

2650

2700

2750

2800

2850

2900

2950

3000

3050

3100

3150

3200

3250

3300

3350

3400

3450

3500

3550

3600

0.436

0.440

0.444

0.448

0.452

0.457

0.461

0.465

0.469

0.473

0.476

0.480

0.483

0.487

0.490

0.494

0.498

0.501

0.505

0.508

0.511

0.514

0.517

0.519

0.522

0.524

0.527

0.528

0.531

--141.015

--143.664

--146.130

--148.573

--150.891

--153.231

--155.588

--157.929

--160.182

--162.557

--164.863

--167.206

--169.520

--171.820

--173.992

--176.195

--178.278

179.789

177.950

176.155

174.401

172.667

170.842

169.000

167.181

165.308

163.438

161.590

159.691

3.502

3.480

3.456

3.433

3.408

3.384

3.360

3.337

3.312

3.290

3.268

3.246

3.223

3.201

3.180

3.157

3.136

3.114

3.092

3.071

3.051

3.031

3.010

2.990

2.970

2.950

2.930

2.911

2.892

89.764

87.853

85.964

84.098

82.262

80.399

78.562

76.708

74.886

73.042

71.221

69.393

67.572

65.747

63.945

62.155

60.357

58.599

56.836

55.112

53.377

51.656

49.907

48.184

46.458

44.716

43.003

41.291

39.560

0.120

--34.293

--35.279

--36.278

--37.227

--38.193

--39.165

--40.131

--41.119

--42.109

--43.087

--44.100

--45.119

--46.143

--47.132

--48.134

--49.132

--50.131

--51.092

--52.074

--53.076

--54.062

--55.020

--55.996

--56.970

--57.975

--59.010

--60.024

--61.051

--62.060

0.102

0.100

0.099

0.097

0.094

0.093

0.091

0.090

0.089

0.088

0.087

0.086

0.085

0.084

0.085

0.086

0.087

0.089

0.090

0.093

0.095

--102.102

--105.319

--108.673

--111.868

--115.093

--118.343

--121.666

--125.028

--128.277

--131.582

--134.657

--137.722

--140.631

--143.444

--146.347

--149.433

--152.745

--156.274

--160.030

--163.912

--167.662

--171.336

--175.010

--178.505

177.850

174.447

170.925

167.846

164.966

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

1.90

3.00

45

4.35

1.25

0.70

0.85

1.50

Figure 23. PCB Pad Layout for SOT--89A

M3111N

YYWW

Figure 24. Product Marking

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

PACKAGE DIMENSIONS

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes



AN1955: Thermal Measurement Methodology of RF Power Amplifiers

AN3100: General Purpose Amplifier and MMIC Biasing

Software

.s2p File

Development Tools



Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to

Software & Tools on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

Nov. 2007

Apr. 2008



Initial Release of Data Sheet

Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings,

p. 1



Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis

(ACPR) unit of measure to dBc, p. 5

Updated Part Numbers in Tables 8, 9, 10, Component Designations and Values, to latest RoHS compliant

part numbers, pp. 6, 7, 8

Apr. 2010

Jan. 2011



Changed Maximum Ratings table value for RF input power from 10 to 20 dBm as a result of

improvements made in the measurement method and the capability of the device, p. 1



Added .s2p File availability to Product Software, p. 15

Corrected temperature at which ThetaJC is measured from 25C to 95C and added “no RF applied” to

Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no

RF signal applied, p. 1



Removed I bias callout from applicable graphs as bias is not a controlled value, pp. 4--8

Removed I bias callout from Table 11, Common Source S--Parameters heading as bias is not a

controlled value, pp. 9--10



Added Printed Circuit Boards availability to Development Tools, p. 15

Sept. 2012

Replaced the PCB Pad Layout drawing, the package isometric and mechanical outline for Case 1514--02

(SOT--89) with Case 2142--01 (SOT--89) as a result of the device transfer from a Freescale wafer fab to an

external GaAs wafer fab and new assembly site. The new assembly and test site’s SOT--89 package has

slight dimensional differences, pp. 1, 11--14. Refer to PCN13337, GaAs Fab Transfer.



Table 6, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD

ratings are characterized during new product development but are not 100% tested during production. ESD

ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive

devices, p. 3



Added Fig. 24, Product Marking, p. 11

Added AN3100, General Purpose Amplifier and MMIC Biasing to Product Documentation, Application

Notes, p. 15

4.1

Oct. 2014



Revised Fig. 24, Product Marking, p. 10

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

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E 2007--2008, 2010--2012, 2014 Freescale Semiconductor, Inc.

MMH3111NT1

Document Number: MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

Rev. 4.1, 10/2014

06035J2R0BBS [NXP]

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