06035G683ZAT4A [AVX]

Capacitor, Ceramic, Chip, General Purpose, 0.068uF, 50V, +80-20%, Y5V, 0603 (1608 mm), Sn/NiBar, -30º ~ +85ºC, 13" Reel;
06035G683ZAT4A
型号: 06035G683ZAT4A
厂家: AVX CORPORATION    AVX CORPORATION
描述:

Capacitor, Ceramic, Chip, General Purpose, 0.068uF, 50V, +80-20%, Y5V, 0603 (1608 mm), Sn/NiBar, -30º ~ +85ºC, 13" Reel

电容器
文件: 总3页 (文件大小:444K)
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06035J0R1PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 20% +Tol, 20% -Tol, -/+30ppm/Cel TC, 0.0000001uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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-
0 AVX

06035J0R3PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 6.6667% +Tol, 6.6667% -Tol, -/+30ppm/Cel TC, 0.0000003uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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0 AVX

06035J0R4BBS

Heterostructure Field Effect Transistor (GaAs HFET)

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1 NXP

06035J0R4PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 5% +Tol, 5% -Tol, -/+30ppm/Cel TC, 0.0000004uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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-
0 AVX

06035J0R6BS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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-
2 NXP

06035J0R6PBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 3.3333% +Tol, 3.3333% -Tol, -/+30ppm/Cel TC, 0.0000006uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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-
0 AVX

06035J0R7BBS

Heterostructure Field Effect Transistor (GaAs HFET)

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-
2 NXP

06035J0R8BBS

Heterostructure Field Effect Transistor (GaAs HFET)

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-
1 NXP

06035J0R8BS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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-
1 NXP

06035J0R9BS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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1 NXP

06035J100GBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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1 NXP

06035J100GBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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-
0 NXP

06035J1R2BBSTR

Film Capacitor, Silicon Dioxide And Nitride, 50V, 8.3333% +Tol, 8.3333% -Tol, -/+30ppm/Cel TC, 0.0000012uF, Surface Mount, 0603, CHIP, ROHS COMPLIANT

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-
1 AVX

06035J1R8BBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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-
1 NXP

06035J1R8BBS

Heterojunction Bipolar Transistor Technology (InGaP HBT)

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-
0 NXP