ELM33412CA-S [ELM-TECH]
Single N-channel MOSFET; 单N沟道MOSFET
| 型号： | ELM33412CA-S |
| 厂家： | 
ELM Technology Corporation |
| 描述： | Single N-channel MOSFET |
| 文件： | 总4页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Single N-channel MOSFET
ELM33412CA-S
■General description
■Features
ELM33412CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=20V
• Id=6A
• Rds(on) < 24mΩ (Vgs=4.5V)
• Rds(on) < 32mΩ (Vgs=2.5V)
• Rds(on) < 50mΩ (Vgs=1.8V)
■Maximum absolute ratings
Parameter
Symbol
Limit
Unit
V
Note
Gate-source voltage
Vgs
±8
Ta=25°C
Ta=70°C
6
Continuous drain current
Id
A
5
25
Pulsed drain current
Avalanche current
Avalanche energy
Idm
Ias
A
A
3
21
L=0.1mH
Ta=25°C
Ta=70°C
Eas
22
mJ
1.0
Power dissipation
Pd
W
0.6
Junction and storage temperature range
Tj, Tstg
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
Max.
130
Unit
°C/W
Note
Maximum junction-to-ambient
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
Pin No.
Pin name
1
2
3
GATE
SOURCE
DRAIN
G
1
2
S
4 - 1
Single N-channel MOSFET
ELM33412CA-S
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
20
V
Vds=16V, Vgs=0V
Idss
1
Zero gate voltage drain current
μA
Vds=10V, Vgs=0V, Tj=70°C
10
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=10V
Vgs=4.5V, Id=6A
±100 nA
0.5
30
0.8
1.0
V
A
1
1
18
21
29
9
24
Static drain-source on-resistance
Rds(on) Vgs=2.5V, Id=5A
Vgs=1.8V, Id=4A
32 mΩ
50
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=5V, Id=6A
Vsd If=6A, Vgs=0V
Is
S
1
1
1
V
A
1.4
Ciss
1030
176
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=10V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
126
Qg
13.2
2.0
4.0
7
nC
nC
nC
ns
2
2
2
2
2
2
2
Gate-source charge
Qgs Vgs=4.5V, Vds=10V, Id=6A
Gate-drain charge
Qgd
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=4.5V, Vds=10V, Id≈6A
13
ns
Turn-off delay time
td(off) Rgen=6Ω
52
ns
Turn-off fall time
tf
16
ns
Body diode reverse recovery time
Body diode reverse recovery charge
trr
14.1
4.0
ns
If=6A, dl/dt=100A/μs
Qrr
nC
NOTE :
1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
Single N-channel MOSFET
ELM33412CA-S
■Typical electrical and thermal characteristics
Outut Characteristics
Transfer Characteristics
VDS, Drain-To-Source Voltage(V)
VGS, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
Caacitance Characteristic
VDS, Drain-To-Source Voltage(V)
TJ , Junction Temperature(�C)
Gate charge Characteristics
Source-Drain Diode Forward Voltage
Qg , Total Gate Charge(nC)
VSD, Source-To-Drain Voltage(V)
4 - 3
Single N-channel MOSFET
ELM33412CA-S
Safe Operating Area
Single Pulse Maximum Power Dissipation
VDS, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Resonse Curve
T
1
, Square Wave Pulse Duration[sec]
4 - 4
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