ELM33413CA-S [ELM-TECH]
Single P-channel MOSFET; 单P沟道MOSFET
| 型号： | ELM33413CA-S |
| 厂家： | 
ELM Technology Corporation |
| 描述： | Single P-channel MOSFET |
| 文件： | 总4页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Single P-channel MOSFET
ELM33413CA-S
■General description
■Features
ELM33413CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=-30V
• Id=-4A
• Rds(on) < 64mΩ (Vgs=-4.5V)
• Rds(on) < 80mΩ (Vgs=-2.5V)
• Rds(on) < 120mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Symbol
Limit
-30
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±
12
V
Ta=25°C
Ta=70°C
-4.0
-3.0
Continuous drain current
Pulsed drain current
Id
Idm
A
A
-20
3
Ta=25°C
Ta=70°C
1.25
Power dissipation
Pd
W
°C
0.80
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
75
Max.
100
Unit
°C/W
Note
Maximum junction-to-ambient
Steady-state
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
Pin No.
Pin name
GATE
1
2
3
SOURCE
DRAIN
G
1
2
S
4 - 1
Single P-channel MOSFET
ELM33413CA-S
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Vgs=0V, Id=-250μA
-30
V
Vds=-24V, Vgs=0V
Idss
-1
Zero gate voltage drain current
μA
Vds=-20V, Vgs=0V, Tj=125°C
-10
±
±
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs= 12V
100 nA
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V, Id=-4A
Rds(on) Vgs=-2.5V, Id=-3A
Vgs=-1.8V, Id=-2A
Gfs Vds=-5V, Id=-4A
Vsd Is=-1A, Vgs=0V
Is
-0.45 -0.80 -1.20
-20
V
A
1
1
55
62
90
12
64 mΩ
80 mΩ
120 mΩ
S
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Input capacitance
1
1
-1.2
-1.6
-3
V
A
A
Ism
3
Ciss
950
115
75
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
9.4
2.0
nC
nC
nC
ns
2
2
2
2
2
2
2
Vgs=-4.5V, Vds=-15V
Gate-source charge
Qgs
Id=-4A
Qgd
Gate-drain charge
3.0
Turn-on delay time
td(on)
6.3
Turn-on rise time
tr
Vgs=-4.5V, Vds=-10V
3.2
ns
Turn-off delay time
td(off) Id≈-1A, Rgen=6Ω
tf
38.0
12.0
ns
Turn-off fall time
ns
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
Single P-channel MOSFET
ELM33413CA-S
■Typical electrical and thermal characteristics
Typical Electrical Characteristics
On-Resistance Variation with
On-Region Characteristics.
Drain Current and Gate Voltage.
15
2
-3.0V
-2.5V
V
GS= -4.5V
V
GS= -2.0V
-3.5V
1.8
1.6
1.4
1.2
1
12
9
6
3
-2.5V
-2.0V
-1.5V
-3.0V
-3.5V
-4.5V
0.8
0
0
1
2
3
4
0
3
6
9
12
15
-VGS, Drain to Source Voltage(V)
-ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
On-Resistance Variation with Temperature.
0.22
1.4
1.3
1.2
I
D
= -4A
ID= -2A
V
GS= -4.5V
0.18
0.14
0.1
1.1
1
TA= 125°C
0.9
0.8
0.7
TA= 25°C
0.06
0.02
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, Junction Temperature(°C)
-VGS, Gate to Source Voltage(V)
Body Diode Forword Voltage Variation
with Source Current and Temperature.
Transfer Characteristics.
10
8
10
1
V
DS= -5V
V
GS= 0V
TA= -55°C
25°C
125°C
TA= 125°C
25°C
-55°C
6
4
2
0.1
0.01
0.001
0
0.0001
0.5
1
1.5
2
2.5
0
0.2
0.4
0.6
0.8
1
1.2
V
GS, Gate to Source Voltage(V)
V
SD, Body Diode Forward Voltage(V)
4 - 3
Single P-channel MOSFET
ELM33413CA-S
Gate-Charge Characteristics
Capacitance Characteristics
5
4
3
2
1
0
1400
1200
1000
f = 1MHz
I
D
= -4A
V
DS= -10V
V
GS= 0 V
-15V
C
iss
800
600
400
200
0
C
oss
C
rss
0
5
10
15
20
25
30
0
2
4
6
8
10
12
-VDS, Drain to Source Voltage (V)
Q
g Gate Charge(nC)
Single Pulse Maximum Power Dissipation.
Maxmum Safe Operating Area.
100
50
SINGLE PULSE
R�JA=100°C/W
40
30
10
1
100 s
ꢀ
LIMIT
RDS(ON)
TA=25°C
1ms
10ms
100ms
1s
20
10
0
DC
V
GS =-10V
SINGLE PULSE
R�JA=100°C/W
TA=25°C
0.1
0.01
0.001
0.01
0.1
1
10
100
0.1
1
10
100
Single Pulse Time(SEC)
-VDS,Drain-Source Voltage(V)
Transisent Thermal Response Curve.
1
D=0.5
0.2
0.1
0.5
0.2
0.1
R�JA(t) = r(t) * R�ꢀꢁ
R�JA=100°C/W
0.05
0.05
0.02
0.01
0.02
0.01
t1
Single Pulse
t2
0.005
TJ
-TA=P*R�JA(t)
Duty Cycle, D= t1/ t2
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t1 Time(SEC)
4 - 4
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