ELM33415CA-S [ELM-TECH]
Single P-channel MOSFET; 单P沟道MOSFET
| 型号： | ELM33415CA-S |
| 厂家： | 
ELM Technology Corporation |
| 描述： | Single P-channel MOSFET |
| 文件： | 总4页 (文件大小：361K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Single P-channel MOSFET
ELM33415CA-S
■General description
■Features
ELM33415CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
• Vds=-20V
• Id=-3.5A
• Rds(on) < 51mΩ (Vgs=-4.5V)
• Rds(on) < 61mΩ (Vgs=-2.5V)
• Rds(on) < 71mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Symbol
Limit
-20
Unit
V
Note
Drain-source voltage
Gate-source voltage
Vds
Vgs
±8
V
Ta=25°C
Ta=70°C
-3.5
Continuous drain current
Pulsed drain current
Id
Idm
A
A
-2.8
-21
3
Ta=25°C
Ta=70°C
1.0
Power dissipation
Pd
W
°C
0.6
Junction and storage temperature range
Tj, Tstg
-55 to 150
■Thermal characteristics
Parameter
Symbol
Rθja
Typ.
Max.
Unit
°C/W
Note
Maximum junction-to-ambient
120
■Pin configuration
■Circuit
D
SOT-23(TOP VIEW)
3
Pin No.
Pin name
GATE
1
2
3
SOURCE
DRAIN
G
1
2
S
4 - 1
Single P-channel MOSFET
ELM33415CA-S
■Electrical characteristics
Ta=25°C
Parameter
Symbol
Condition
Min. Typ. Max. Unit Note
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Vgs=0V, Id=-250μA
-20
V
Vds=-16V, Vgs=0V
Idss
-1
Zero gate voltage drain current
μA
Vds=-10V, Vgs=0V, Tj=70°C
-10
Gate-body leakage current
Gate threshold voltage
On state drain current
Igss Vds=0V, Vgs=±8V
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Vgs=-4.5V, Id=-3.5A
±100 nA
-0.45 -0.60 -0.90
-21
V
A
1
1
40
48
60
17
51 mΩ
61 mΩ
71 mΩ
S
Static drain-source on-resistance
Rds(on) Vgs=-2.5V, Id=-3.5A
Vgs=-1.8V, Id=-2.0A
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Gfs Vds=-5V, Id=-3.5A
Vsd If=-3.5A, Vgs=0V
Is
1
1
-1.3
-3.5
V
A
Ciss
1180
185
117
pF
pF
pF
Output capacitance
Coss Vgs=0V, Vds=-10V, f=1MHz
Crss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Qg
16.7
1.8
4.6
20
nC
nC
nC
ns
2
2
2
2
2
2
2
Vgs=-4.5V, Vds=-10V
Gate-source charge
Qgs
Id=-3.5A
Qgd
Gate-drain charge
Turn-on delay time
td(on)
Turn-on rise time
tr
Vgs=-4.5V, Vds=-10V
36
ns
Turn-off delay time
td(off) Id≈-3.5A, Rgen=3.3Ω
tf
45
ns
Turn-off fall time
62
ns
Body diode reverse recovery time
Body diode reverse recovery charge
trr
30
ns
If=-3.5A, dl/dt=100A/μs
Qrr
14
nC
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4 - 2
Single P-channel MOSFET
ELM33415CA-S
■Typical electrical and thermal characteristics
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4 - 3
Single P-channel MOSFET
ELM33415CA-S
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4 - 4
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