SI-A1125_13 [DIOTEC]
High Voltage Silicon Rectifier Diodes; 高压硅整流二极管
| 型号： | SI-A1125_13 |
| 厂家： | 
DIOTEC SEMICONDUCTOR |
| 描述： | High Voltage Silicon Rectifier Diodes |
| 文件： | 总2页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SI-A1125/500-6 ... SI-A8000/3600-1.8
SI-A1125/500-6 ... SI-A8000/3600-1.8
High Voltage Silicon Rectifier Diodes
Silizium-Hochspannungs-Gleichrichterdioden
Version 2013-03-11
Nominal current
Nennstrom
6...1.8 A
1125...8000 V
Ø 55 x 23 [mm]
125 g
Alternating input voltage
Eingangswechselspannung
55
Hockey-puck plastic case
Hockey-puck Kunststoffgehäuse
16
Weight approx.
Gewicht ca.
Polarity: Cathode to stud
Polarität: Kathode am Außengewinde
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
SI-A 3000/1350-2.5
M 8
Standard packaging bulk
Standard Lieferform lose im Karton
Dimensions - Maße [mm]
Maximum ratings
Grenzwerte
Type 1)
Typ 1)
Rated DC voltage
Anschlussgleichspg.
VRD [V]
Alternat. input voltage
Eingangswechselspg.
VVRMS [V]
Rep. peak reverse voltage
Period. Spitzensperrspg.
VRRM [V]
SI-A1125/500-6
SI-A1750/775-4
SI-A3000/1350-2.5
SI-A8000/3600-1.8
500
775
1125
1750
3000
8000
3200
4800
1350
3600
8000
24000
Maximum ratings, TA = 50°C
Grenzwerte, TA = 50°C
Type
Typ
Max. average fwd. current
Peak fwd. surge current
Stoßstrom
Rating for fusing
Grenzlastintegral
i2t [A2s] (t<10 ms)
Dauergrenzstrom
IFRM [A]
IFSM [A] 2)
SI-A1125/500-6
SI-A1750/775-4
SI-A3000/1350-2.5
SI-A8000/3600-1.8
6.0
4.0
2.5
1.8
300
200
200
100
450
200
200
50
1
2
SI-A and SI-E are identical devices – Si-A und SI-E sind identische Bauteile
For one 50 Hz half sine-wave – Für eine 50 Hz Sinus-Halbwelle
© Diotec Semiconductor AG
http://www.diotec.com/
1
SI-A1125/500-6 ... SI-A8000/3600-1.8
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M8
< 72 lb.in.
< 8 Nm
Characteristics
Kennwerte
Type
Typ
Forward voltage
Durchlass-Spannung
VF [V] at/bei IF [A]
Tj = 25°C
Leakage current
Sperrstrom
IR [µA] at / bei VRRM
Tj = 25°C
Leakage current
Sperrstrom
IR [mA] at / bei VRRM
Tj = 150°C
SI-A1125/500-6
SI-A1750/775-4
SI-A3000/1350-2.5
SI-A8000/3600-1.8
< 3
< 4
6
< 5
< 5
< 5
< 5
< 1
< 1
< 1
< 1
4
< 6
2.5
1.8
< 15
Cascade connection by screwing on top of each other:
Kaskadierbar durch Aufeinanderschrauben:
SI-A 3000/1350-2.5
SI-A 3000/1350-2.5
SI-A 3000/1350-2.5
SI-A 3000/1350-2.5
2
http://www.diotec.com/
© Diotec Semiconductor AG
相关型号：
SI-B14000/1800-1.8
Rectifier Diode, 1 Phase, 1 Element, 1.8A, 12000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
DIOTEC
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