ZXTN618MATA [DIODES]
20V NPN LOW SATURATION TRANSISTOR; 20V NPN低饱和晶体管
| 型号： | ZXTN618MATA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V NPN LOW SATURATION TRANSISTOR |
| 文件： | 总7页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXTN618MA
20V NPN LOW SATURATION TRANSISTOR
Features and Benefits
Mechanical Data
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•
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Case: DFN2020B-3
•
•
•
•
•
•
•
•
•
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BVCEO > 20V
IC = 4.5A Continuous Collector Current
Case Material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal Package Height: 0.6mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
Low Saturation Voltage (150mV max @ 1A)
RSAT = 47 mΩ for a low equivalent On-Resistance
hFE specified up to 6A for high current gain hold up
Low profile 0.6mm high package for thin applications
RθJA efficient, 60% lower than SOT23
4mm2 footprint, 50% smaller than SOT23
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
•
•
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MOSFET Gate Driving
DC-DC Converters
Charging circuits
Power switches
Motor Control
DFN2020B-3
C
B
E
Device Symbol
Top View
Bottom View
Bottom View
Pin-Out
Ordering Information
Product
ZXTN618MATA
Marking
SB
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
Marking Information
SB = Product Type Marking code
SB
Top View
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
1 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN618MA
Maximum Ratings @TA = 25°C unless otherwise specified
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Limit
40
20
7
Unit
Collector-Emitter Voltage
Emitter-Base Voltage
V
Peak Pulse Current
12
4.5
5
(Note 3)
Continuous Collector Current
(Note 4)
Base Current
A
IC
IB
1
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1.5
12
2.45
19.6
83
Unit
(Note 3)
(Note 4)
W
mW/°C
Power Dissipation
Linear Derating Factor
PD
(Note 3)
(Note 4)
(Note 5)
Thermal Resistance, Junction to Ambient
Rθ
JA
51
16.8
°C/W
°C
Thermal Resistance, Junction to Lead
Rθ
JL
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
3. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t ≤ 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
2 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN618MA
Thermal Characteristics
2.0
1.5
1.0
0.5
0.0
VCE(SAT)
10
Limited
10 sqcm
Single
oz Cu
1
Tamb=25°C
DC
1s
100ms
10ms
0.1
1ms
100us
Single Pulse, Tamb=25°C
1
0.01
0.1
10
0
25
50
75
100
125
150
VCE Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
225
200
175
150
125
100
75
10 sqcm
Single
oz Cu
80
60
40
20
0
Tamb=25°C
D=0.5
1oz copper
Single Pulse
D=0.05
D=0.1
D=0.2
50
25
2oz copper
10
0
0.1
100µ 1m 10m 100m
1
10
100
1k
1
100
Pulse Width (s)
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Transient Thermal Impedance
3.5
Tamb=25°C
Tj max=150°C
Continuous
2oz copper
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1oz copper
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
3 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN618MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
40
20
7
Typ
100
27
8.2
-
Max
-
Unit
V
Test Condition
IC = 100 µA
-
V
IC = 10 mA
IE = 100 µA
VCB = 30V
VEB = 6V
-
V
-
100
100
100
nA
nA
nA
Emitter Cutoff Current
-
-
IEBO
Collector Emitter Cutoff Current
-
-
ICES
VCES = 16V
I
I
C = 10mA, VCE = 2V
C = 200mA, VCE = 2V
200
300
200
100
400
450
360
180
-
-
-
-
Static Forward Current Transfer Ratio (Note 6)
Collector-Emitter Saturation Voltage (Note 6)
-
hFE
IC = 2A, VCE = 2V
I
C = 6A, VCE = 2V
I
C =0.1A, IB = 10mA
-
-
-
-
-
8
90
115
190
210
15
IC = 1A, IB = 10mA
C = 2A, IB = 50mA
IC =3A, IB = 100mA
C =4.5A, IB = 125mA
150
135
250
300
mV
VCE(sat)
I
I
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
-
-
-
0.88
0.98
23
0.97
1.07
30
V
V
VBE(on)
VBE(sat)
Cobo
IC = 4.5A, VCE = 2V
IC = 4.5A, IB = 125mA
VCB = 10V. f = 1MHz
pF
V
CE = 10V, IC = 50mA,
f = 100MHz
CC = 10V, IC = 3A
B1 = IB2 = 10mA
Transition Frequency
100
140
-
MHz
fT
Turn-On Time
Turn-Off Time
-
-
170
400
-
-
ns
ns
ton
toff
V
I
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
4 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN618MA
Typical Electrical Characteristics
0.25
0.20
0.15
0.10
0.05
0.00
IC/IB=50
Tamb=25°C
100m
100°C
25°C
IC/IB=100
10m
IC/IB=50
-55°C
IC/IB=10
1m
1m
10m
100m
1
10
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
630
540
450
360
270
180
90
VCE=2V
IC/IB=50
1.0
0.8
0.6
0.4
1.2
100°C
1.0
0.8
0.6
0.4
0.2
0.0
25°C
-55°C
25°C
-55°C
100°C
100m
0
1m
10m
100m
1
10
1m
10m
1
10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
VCE=2V
1.0
0.8
0.6
0.4
-55°C
25°C
100°C
100m
1m
10m
1
10
IC Collector Current (A)
VBE(ON) v IC
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
5 of 7
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December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN618MA
Package Outline Dimensions
A3
A
DFN2020B-3
Dim Min Max Typ
SEATING PLANE
A1
A
A1
A3
b
0.57 0.63 0.60
0
⎯
0.05 0.02
0.152
D
⎯
D2
Z
0.20 0.30 0.25
D
1.95 2.075 2.00
L
D2 1.22 1.42 1.32
D4 0.56 0.76 0.66
D4
e
E
E2
E4
L
0.65
⎯
⎯
E
E2
1.95 2.075 2.00
0.79 0.99 0.89
0.48 0.68 0.58
0.25 0.35 0.30
E4
b
Z
0.225
⎯
⎯
e
e
All Dimensions in mm
Suggested Pad Layout
X
Y1
Dimensions Value (in mm)
C
G
X
X1
Y
Y1
Y2
1.30
0.24
0.35
1.52
1.09
0.47
0.50
Y
G
X1
Y2
C
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
6 of 7
www.diodes.com
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXTN618MA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
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Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-
critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
ZXTN618MA
Document Number DS31890 Rev. 4 – 2
7 of 7
www.diodes.com
December 2010
© Diodes Incorporated
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