ZXTN649F [DIODES]
NPN LOW VCE(sat) TRANSISTOR IN SOT-23; NPN低VCE （ sat）的晶体管SOT- 23
| 型号： | ZXTN649F |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN LOW VCE(sat) TRANSISTOR IN SOT-23 |
| 文件： | 总7页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Features
Mechanical Data
•
•
•
•
•
•
Case: SOT-23
•
•
•
•
•
•
•
•
•
•
BVCEO > 25V
BVCBO > 35V
IC(cont) = 3A Continuous Currrent
Case material: molded Plastic. “Green” molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
V
R
CE(sat) < 120mV @ 1A
CE(sat) = 77 mΩ
PD = 0.725W
6A Peak Pulse Current
25V Forward Blocking Voltage
Complementary part number ZXTP749F
Lead, Halogen and Antimony Free, RoHS Compliant
(Note 1)
Weight: 0.008 grams (approximate)
•
“Green” Devices (Note 2)
Applications
•
•
•
MOSFET gate drivers
Power switches
Motor control
SOT-23
Top View
Device symbol
Pin Configuration
Ordering Information
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTN649FTA
1N7
7
8mm
3000
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.‘s “Green” Policy can be found on our website at http://www.diodes.com
Marking Information
1N7 = Product type Marking Code
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www.diodes.com
October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
35
25
7
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current (Note 3)
Peak Pulse Current
3
A
6
A
ICM
Base Current
500
mA
IB
Thermal Characteristics
Characteristic
Symbol
Value
725
Unit
mW
Power Dissipation at TA = 25°C (Note 4)
PD
172
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Lead @ TA = 25°C
Operating and Storage Temperature Range
°C/W
Rθ
JA
79
°C/W
°C
Rθ
JL
-55 to +150
TJ, TSTG
Notes:
3. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. For device mounted on FR4 PCB measured at t ≤ 2 Secs.
2 of 7
www.diodes.com
October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Thermal Characteristics and Derating information
3 of 7
www.diodes.com
October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
Min
35
25
7
Typ
110
35
Max
Unit
V
Test Condition
IC = 100 µA
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
V
IC = 10 mA
IE = 100 µA
8.1
V
V
CB = 28V
50
0.5
nA
µA
Collector Cutoff Current
Emitter Cutoff Current
< 1
< 1
ICBO
IEBO
VCB = 28V, Tamb=100 °C
VEB = 5.6V
50
nA
I
I
C = 100mA, VCE = 2V
C = 1A, VCE = 2V
200
175
155
50
320
280
250
85
500
Static Forward Current Transfer Ratio (Note 5)
hFE
IC = 2A, VCE = 2V
I
I
IC = 3A, IB = 300mV
IC = 1A, VCE = 2V
IC = 1A, IB = 100mV
C = 6A, VCE = 2V
C =1A, IB = 100mV
70
200
120
300
mV
mV
Collector-Emitter Saturation Voltage (Note 5)
VCE(sat)
Base-Emitter Turn-On Voltage (Note 5)
Base-Emitter Saturation Voltage (Note 5)
780
900
850
mV
mV
VBE(on)
VBE(sat)
1000
Notes:
5. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
4 of 7
www.diodes.com
October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Typical Characteristics
5 of 7
www.diodes.com
October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
Package Outline Dimensions
A
SOT-23
Dim
A
B
C
D
F
G
H
J
K
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013 0.10
0.903 1.10
-
0.45
0.085 0.18
0° 8°
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
C
B
2.05
3.00
1.83
2.90
0.05
1.00
0.400
0.55
0.11
-
H
G
M
K
J
K1
D
K1
L
M
-
F
L
0.61
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
C
E
X
6 of 7
www.diodes.com
October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
A Product Line of
Diodes Incorporated
ZXTN649F
NPN LOW VCE(sat) TRANSISTOR IN SOT-23
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life
support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
7 of 7
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October 2009
© Diodes Incorporated
ZXTN649F
Document Number DS31900 Rev. 2 - 2
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