ZXTN620MATA [DIODES]
80V NPN LOW SATURATION TRANSISTOR; 80V NPN低饱和晶体管
| 型号： | ZXTN620MATA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 80V NPN LOW SATURATION TRANSISTOR |
| 文件： | 总7页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXTN620MA
80V NPN LOW SATURATION TRANSISTOR
Features and Benefits
Mechanical Data
•
•
•
•
•
•
•
Case: DFN2020B-3
•
•
•
•
•
•
•
•
•
•
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BVCEO > 80V
IC = 3.5A Continuous Collector Current
Low Saturation Voltage (185mV max @ 1A)
RSAT = 68 mΩ for a low equivalent On-Resistance
Case Material: Molded Plastic. “Green” Molding Compound.
Terminals: Pre-Plated NiPdAu leadframe.
Nominal Package Height: 0.6mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
hFE specified up to 5A for high current gain hold up
Low profile 0.6mm high package for thin applications
RθJA efficient, 60% lower than SOT23
4mm2 footprint, 50% smaller than SOT23
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
•
•
•
MOSFET Gate Driving
DC–DC Converters
Charging circuits
Motor Control
Power switches
DFN2020B-3
C
B
E
Top View
Device Symbol
Bottom View
Pin-Out
Bottom View
Ordering Information
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXTN620MATA
SE
7
8
3000
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
Marking Information
SE = Product Type Marking code
SE
Top View
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN620MA
Maximum Ratings @TA = 25°C unless otherwise specified
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Limit
100
80
Unit
Collector-Emitter Voltage
Emitter-Base Voltage
V
7
Peak Pulse Current
5
(Note 3)
(Note 4)
3.5
3.8
1
Continuous Collector Current
A
IC
IB
Base Current
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1.5
12
2.45
19.6
83
Unit
(Note 3)
(Note 4)
W
mW/°C
Power Dissipation
Linear Derating Factor
PD
(Note 3)
(Note 4)
(Note 5)
Thermal Resistance, Junction to Ambient
Rθ
JA
51
16.8
°C/W
°C
Thermal Resistance, Junction to Lead
Rθ
JL
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
3. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
4. Same as note (3), except the device is measured at t ≤ 5 sec.
5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN620MA
Thermal Characteristics
2.0
1.5
1.0
0.5
0.0
VCE(SAT)
10
Limited
10 sqcm
Single
1oz Cu
1
Tamb=25°C
DC
1s
100ms
10ms
0.1
1ms
100us
10
Single Pulse, Tamb=25°C
1
0.01
0.1
100
0
25
50
75
100
125
150
VCE Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
225
200
175
150
125
100
75
10 sqcm
Single
1oz Cu
80
60
40
20
0
D=0.5
1oz copper
Single Pulse
D=0.05
D=0.1
D=0.2
50
25
2oz copper
10
0
0.1
100µ 1m 10m 100m
1
10
100
1k
1
100
Pulse Width (s)
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Transient Thermal Impedance
3.5
Tamb=25°C
Tj max=150°C
Continuous
2oz copper
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1oz copper
0.1
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN620MA
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
100
Typ
180
110
8.2
-
Max
-
Unit
V
Test Condition
IC = 100 µA
80
7
-
-
V
IC = 10 mA
IE = 100 µA
VCB = 80V
VEB = 6V
VCE = 65V
-
V
100
100
100
nA
nA
nA
Emitter Cutoff Current
-
-
IEBO
Collector Emitter Cutoff Current
-
-
ICES
I
C = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
C = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
C = 3A, VCE = 2V
IC = 5A, VCE = 2V
200
300
110
60
20
-
450
450
170
90
30
10
-
900
I
-
-
-
-
Static Forward Current Transfer Ratio (Note 6)
-
hFE
I
I
I
C = 0.1A, IB = 10mA
C = 0.5A, IB = 50mA
-
-
-
-
-
15
45
145
160
240
20
60
185
200
340
Collector-Emitter Saturation Voltage (Note 6)
mV
VCE(sat)
IC = 1A, IB = 20mA
C = 1.5A, IB = 50mA
I
IC = 3.5A, IB = 300mA
IC = 3.5A, VCE = 2V
IC = 3.5A, IB = 300mA
VCB = 10V. f = 1MHz
Base-Emitter Turn-On Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
Output Capacitance
-
-
-
0.96
1.09
11.5
1.05
1.175
18
V
V
VBE(on)
VBE(sat)
Cobo
pF
VCE = 10V, IC = 50mA,
f = 100MHz
Transition Frequency
100
160
-
MHz
fT
Turn-On Time
Turn-Off Time
-
-
86
-
-
ns
ns
ton
toff
V
CC = 10V, IC = 1A
1128
IB1 = IB2 = 25mA
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN620MA
Typical Electrical Characteristics
0.25
0.20
0.15
0.10
0.05
0.00
IC/IB=50
Tamb=25°C
100m
100°C
25°C
IC/IB=10
IC/IB=20
IC/IB=50
IC/IB=100
10m
-55°C
1m
1m
10m
100m
1
10
1m
10m
100m
1
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
630
540
450
360
270
180
90
VCE=2V
IC/IB=50
1.0
0.8
0.6
0.4
100°C
25°C
-55°C
25°C
-55°C
100°C
100m
0
10
1m
10m
100m
1
1m
10m
1
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
VCE=2V
1.0
0.8
0.6
0.4
0.2
-55°C
25°C
100°C
1m
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN620MA
Package Outline Dimensions
DFN2020B-3
Dim Min Max Typ
A3
A
SEATING PLANE
A
A1
A3
b
0.57 0.63 0.60
A1
0
⎯
0.05 0.02
0.152
⎯
D
0.20 0.30 0.25
1.95 2.075 2.00
D2
D
Z
D2 1.22 1.42 1.32
D4 0.56 0.76 0.66
L
D4
e
E
0.65
⎯
⎯
1.95 2.075 2.00
0.79 0.99 0.89
0.48 0.68 0.58
0.25 0.35 0.30
E
E2
E2
E4
L
E4
Z
0.225
⎯
⎯
b
All Dimensions in mm
e
e
Suggested Pad Layout
X
Y1
Y
Dimensions Value (in mm)
C
G
1.30
0.24
0.35
1.52
1.09
0.47
0.50
X
X1
Y
G
X1
Y2
Y1
Y2
C
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
A Product Line of
Diodes Incorporated
ZXTN620MA
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability
arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license
under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are
represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall
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out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in
the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or
systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning
their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any
devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify
Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-
critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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December 2010
© Diodes Incorporated
ZXTN620MA
Document Number DS31894 Rev. 3 - 2
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