ZXMP3F30FH [DIODES]

30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET; SOT23封装30V P沟道增强型MOSFET


型号：	ZXMP3F30FH
厂家：	DIODES INCORPORATED
描述：	30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET SOT23封装30V P沟道增强型MOSFET
文件：	总8页 (文件大小：203K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Part no.

ZXMP3F30FH

30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET

Summary

I_D(A)

V_{(BR)DSS (V)}

R_DS(on)(Ω)

0.080 @ V = -10V

-4.0

-30

0.140 @ V = -4.5V

Description

This new generation Trench MOSFET from Zetex has been designed to minimize the

on-state resistance (R_DS(on)) and yet maintain superior switching performance.

Features

•

Low on-resistance

Fast switching speed

4.5V gate drive capability

Thermally enhanced SOT23 package

Applications

•

Power management

Portable Equipment

Battery charging

Ordering information

Device

Reel size

(inches)

Tape width

(mm)

Quantity

per reel

ZXMP3F30FHTA

Device marking

KPA

7”

8mm

3,000

Pinout – top view

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Absolute Maximum Ratings

Absolute maximum ratings

Parameter

Symbol

Limit

Unit

V_DSS

Drain-Source voltage

-30

V_GS

I_D

Gate-Source voltage

±20

-3.4

-2.7

-2.8

-4.0

(b)

(a)

(d)

Continuous Drain current @ V_GS= -10V; T_A=25°C

@ V_GS= -10V; T_A=70°C

@ V_GS= -10V; T_A=25°C

@ V_GS= -10V; T_L=25°C

(c)

I_DM

-15.3

-2

Pulsed Drain current

(b)

Continuous Source current (Body diode)

I_S

(c)

-15.3

Pulsed Source current (Body diode)

I_SM

P_D

(a)

0.95

7.6

mW/°C

Power dissipation at T_A=25°C

Linear derating factor

(b)

1.4

11.2

mW/°C

Power dissipation at T_A=25°C

Linear derating factor

(d)

1.96

15.7

mW/°C

Power dissipation at T_L=25°C

Linear derating factor

T , T

Operating and storage temperature range

-55 to 150

stg

°C

Thermal resistance

Parameter

Symbol

Value

131

Unit

°C/W

(a)

θJA

Junction to ambient

(b)

°C/W

Junction to ambient

θJA

(d)

63.77

Junction to lead

θJL

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions.

(b) Mounted on FR4 PCB measured at t ≤ 10 sec.

temperature.

(d) Thermal resistance from junction to solder-point (at the end of the drain lead).

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Thermal Characteristics

1.0

0.8

0.6

0.4

0.2

0.0

R_DS(on)

Limit

25mm x 25mm

1oz FR4

100ms

100m

10ms

T_amb=25°C

1ms

25mm x 25mm

1oz FR4

100µs

10m

100m

20 40 60 80 100 120 140 160

-V_DSDrain-Source Voltage (V)

Temperature (°C)

Safe Operating Area

Derating Curve

100

T_amb=25°C

Single Pulse

T_amb=25°C

120

100

25mm x 25mm

1oz FR4

25mm x 25mm

1oz FR4

D=0.5

D=0.1

D=0.05

Single Pulse

D=0.2

100µ 1m 10m 100m

100

100µ 1m 10m 100m

100

Pulse Width (s)

Transient Thermal Impedance

Pulse Power Dissipation

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Electrical characteristics (at T_amb= 25°C unless otherwise stated)

Parameter

Symb Min.

Typ.

Max. Unit Conditions

Static

Drain-Source breakdown

voltage

-30

V_(BR)DSS

I_DSS

I_D= -250μA, V_GS=0V

_DS=-30V, V_GS=0V

Zero Gate voltage Drain

current

-1.0

100

µA

I_GSS

Gate-Body leakage

V_GS=±20V, V_DS=0V

I_D= -250μA, V_DS=V_GS

Gate-Source threshold

voltage

V_GS(th)

-1.0

R_DS(on)

Static Drain-Source

0.080

0.140

Ω

_GS= -10V, I_D= -2.5A

_GS= -4.5V, I_D= -1.9A

( )

on-state resistance *

g_fs

Forward

V_DS= -15V, I_D= -3A

( ) (†)

Transconductance *

(†)

Dynamic

Input capacitance

Output capacitance

370

C_iss

C_oss

C_rss

V_DS= -15V, V_GS=0V

f=1MHz

Reverse transfer

capacitance

(‡) (†)

Switching

Turn-on-delay time

Rise time

1.3

2.6

t_d(on)

t_r

t_d(off)

t_f

V_DD= -15V, V_GS= -10V

I_D= -1A

Turn-off delay time

R_G≅ 6.0Ω,

Fall time

Gate charge

Total Gate charge

Q_g

V_DS= -15V, V_GS= -10V

I_D= -3A

Gate-Source charge

Gate-Drain charge

Source–Drain diode

1.2

1.3

Q_gs

Q_gd

( )

I_S= -1.7A,V_GS=0V

-0.80

14.6

9.5

-1.2

Diode forward voltage *

V_SD

t_rr

(‡)

Reverse recovery time

I_S= -1.5A,di/dt=100A/μs

(‡)

Q_rr

Reverse recovery charge

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

(†)Switching characteristics are independent of operating junction temperature.

(‡)For design aid only, not subject to production testing

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Typical Characteristics

10V

T = 150°C

4.5V

3.5V

4.5V

3.5V

2.5V

0.1

0.01

V_GS

T = 25°C

0.01

0.1

-V_DSDrain-Source Voltage¹(⁰V)

Output Characteristics

V_GS= 10V

I_D= 3A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_DS= 10V

R_DS(on)

T = 150°C

T = 25°C

V_GS= V_DS

V_GS(th)

I_D= 250uA

0.1

-50

100

150

Tj Junction Temperature (°C)

-V Gate-Source Voltage (V)

Typical T^Gra^Snsfer Characteristics

Normalised Curves v Temperature

T = 25°C

V_GS

T = 150°C

3.5V

4.5V

T = 25°C

0.1

0.01

10V

0.1

Vgs = 0V

1.0

1E-3

0.2

0.4

0.6

0.8

1.2

-I_DDrain Current¹(⁰A)

-V_SDSource-Drain Voltage (V)

On-Resistance v Drain Current

Source-Drain Diode Forward Voltage

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Typical Characteristics

600

500

V_GS= 0V

f = 1MHz

I_D= 3A

400

C_ISS

C_OSS

300

200

100

C_RSS

V_DS= 15V

Q - Ch³arge (nC)

-V_DS- Drain - Source Voltage (V)

Capacitance v Drain-Source Voltage

Gate-Source Voltage v Gate Charge

Test Circuits

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Packaging Details – SOT23

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Definitions

Product change

Diodes Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or

service. Customers are solely responsible for obtaining the latest relevant information before placing orders.

Applications disclaimer

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s

application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Diodes Inc.

with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or

otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),

breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of

these circuit applications, under any circumstances.

Life support

Diodes Inc. products are specifically not authorized for use as critical components in life support devices or systems without the express written

approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

Life support devices or systems are devices or systems which:

1. are intended to implant into the body

2. support or sustain life and whose failure to perform when properly used in accordance with instructions

for use provided in the labeling can be reasonably expected to result in significant injury to the user.

A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or to affect its safety or effectiveness.

Reproduction

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in

writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating

to the products or services concerned.

Terms and Conditions

All products are sold subjects to Diodes Zetex terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two

when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.

For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.

Quality of product

Diodes Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.

To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Zetex Semiconductors or one of our

regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.

ESD (Electrostatic discharge)

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The

possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage

can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of

being affected should be replaced.

Green compliance

Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding

regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the

use of hazardous substances and/or emissions.

All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE

and ELV directives.

Product status key:

“Preview”

“Active”

Future device intended for production at some point. Samples may be available

Product status recommended for new designs

“Last time buy (LTB)”

Device will be discontinued and last time buy period and delivery is in effect

“Not recommended for new designs” Device is still in production to support existing designs and production

“Obsolete”

Production has been discontinued

Datasheet status key:

“Draft version”

This term denotes a very early datasheet version and contains highly provisional

information, which may change in any manner without notice.

“Provisional version”

“Issue”

This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.

However, changes to the test conditions and specifications may occur, at any time and without notice.

This term denotes an issued datasheet containing finalized specifications. However, changes to

specifications may occur, at any time and without notice.

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Europe

Americas

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Corporate Headquarters

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Balanstraße 59

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Germany

Zetex Inc

Diodes Zetex (Asia Ltd)

3701-04 Metroplaza Tower 1

Hing Fong Road, Kwai Fong

Hong Kong

Diodes Incorporated

15660 N. Dallas Parkway

Suite 850

700 Veterans Memorial Highway

Hauppauge, NY 11788

USA

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Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

europe.sales@zetex.com

Telephone: (1) 631 360 2222

Fax: (1) 631 360 8222

usa.sales@zetex.com

Telephone: (852) 26100 611

Fax: (852) 24250 494

asia.sales@zetex.com

www.diodes.com

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ZXMP3F30FH [DIODES]

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