ZXMP3F37DN8 [DIODES]
30V SO8 Dual P-channel enhancement mode MOSFET; 30V SO8双P沟道增强型MOSFET型号: | ZXMP3F37DN8 |
厂家: | DIODES INCORPORATED |
描述: | 30V SO8 Dual P-channel enhancement mode MOSFET |
文件: | 总8页 (文件大小:245K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ZXMP3F37DN8
30V SO8 Dual P-channel enhancement mode MOSFET
Summary
V(BR)DSS (V)
RDS(on) (Ω)
ID(A)
-30
0.025 @ VGS=-10V
0.041 @ VGS=-4.5V
-8.3
Description
This new generation Trench MOSFET from Zetex has been
designed to minimize the on-state resistance (RDS(on)
)
and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
Dual SO8 package
Applications
•
•
•
•
DC-DC Converters
Power management functions
Disconnect switches
Motor control
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMP3F37DN8TA
7
12
500
Device marking
ZXMP 3F37D
Issue 1 - August 2008
© Diodes Incorporated 2008
1
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
VDSS
Drain-Source voltage
-30
V
VGS
ID
Gate-Source voltage
V
V
±20
(b)(d)
(b)(d)
(a)(d)
(f)
-7.3
-5.9
-5.7
-8.3
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C
@ VGS= -10V; TA=25°C
@ VGS= -10V; TL=25°C
(c)
IDM
-36
-3.5
-36
A
A
A
Pulsed Drain current
(b)
Continuous Source current (Body diode)
IS
(c)
Pulsed Source current (Body diode)
ISM
PD
(a)(d)
1.25
10
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(a)(e)
1.8
14
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
P
P
P
D
D
D
(b)(d)
2.1
17
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
(a)(f)
2.7
W
mW/°C
°C
Power dissipation at TL =25°C
Linear derating factor
21.5
T , T
Operating and storage temperature range
-55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Value
Unit
°C/W
°C/W
°C/W
°C/W
(a)(d)
R
θJA
100
Junction to ambient
(b)(e)
R
θJA
70
60
Junction to ambient
(b)(d)
R
θJA
Junction to ambient
(a)(f)
R
θJL
46.42
Junction to lead
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a dual device with 2 active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 - August 2008
© Diodes Incorporated 2008
2
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Thermal characteristics
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
RDS(on)
Limited
10
Two active die
1
DC
100m
10m
1m
1s
100ms
10ms
Single Pulse
Tamb=25°C
One active die
1ms
100µs
10
One active die
100m
1
0
20 40 60 80 100 120 140 160
-VDS Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
110
100
90
80
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
Tamb=25°C
One active die
100
10
1
One active die
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
Issue 1 - August 2008
© Diodes Incorporated 2008
3
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Electrical characteristics (at Tamb = 25°C unless otherwise stated) Q1 and Q2
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
-30
V
V(BR)DSS
IDSS
ID = -250μA, VGS=0V
DS=-YV, VGS=0V
Zero Gate voltage Drain
current
-1.0
µA
V
IGSS
Gate-Body leakage
100
-2.5
nA
V
VGS=±20V, VDS=0V
ID= -250μA, VDS=VGS
Gate-Source threshold
voltage
VGS(th)
-1.3
RDS(on)
Static Drain-Source
0.025
0.041
Ω
V
GS= -10V, ID= -7.1A
GS= -4.5V, ID= -5.5A
( )
on-state resistance *
V
gfs
Forward
18.6
S
VDS= -15V, ID= -7.1A
( ) (†)
Transconductance *
(†)
Dynamic
Input capacitance
Output capacitance
1678
303
pF
pF
pF
Ciss
Coss
Crss
VDS= -15V, VGS=0V
f=1MHz
Reverse transfer
capacitance
178
(‡) (†)
Switching
Turn-on-delay time
Rise time
3.5
4.9
44
ns
ns
ns
ns
td(on)
tr
td(off)
tf
VDD= -15V, VGS= -10V
ID= -1A
Turn-off delay time
RG ≅ 6.0Ω,
Fall time
28
Gate charge
Total Gate charge
31.6
4.3
nC
nC
nC
Qg
VDS= -15V, VGS= -10V
ID= -7.1A
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Qgs
Qgd
6.2
( )
IS= -1.7A,VGS=0V
-0.80
16.2
10
-1.2
V
Diode forward voltage *
VSD
trr
(‡)
ns
nC
Reverse recovery time
IS= -2.2A,di/dt=100A/μs
(‡)
Qrr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
Issue 1 - August 2008
© Diodes Incorporated 2008
4
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Typical characteristics
10V
T = 150°C
10V
3.5V
3V
3.5V
4.5V
10
1
3V
10
1
2.5V
2V
2.5V
0.1
0.01
VGS
VGS
T = 25°C
1
0.1
0.1
0.1
1
-VDS Drain-Source Voltage1(0V)
-VDS Drain-Source Voltage1(0V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 7.1A
10
1
VDS = 10V
RDS(on)
T = 150°C
T = 25°C
VGS = VDS
VGS(th)
ID = 250uA
0.1
2
3
-50
0
50
150
Tj Junction Temperatur1e00(°C)
-V Gate-Source Voltage (V)
Typical TGraS nsfer Characteristics
Normalised Curves v Temperature
10
10
1
T = 25°C
VGS
2.5V
T = 150°C
1
3V
T = 25°C
3.5V
0.1
0.1
0.01
4V
10V
Vgs = 0V
0.8
0.01
1E-3
0.2
0.4
0.6
1.0
0.1
1
-ID Drain Current1(0A)
-VSD Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
Issue 1 - August 2008
© Diodes Incorporated 2008
5
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Typical characteristics
2500
2000
10
9
8
7
6
5
4
3
2
1
0
VGS = 0V
f = 1MHz
ID = 7.1A
CISS
1500
COSS
1000
500
CRSS
VDS = 15V
0
1
10
0
5
10
15
25
30
35
Q - Charge2(n0C)
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
Issue 1 - August 2008
© Diodes Incorporated 2008
6
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Package outline SO8
SO8 Package Information
DIM
Inches
Min.
Millimeters
DIM
Inches
Min. Max.
0.050 BSC
Millimeters
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
1.27 BSC
0.013
0.020
0.010
8°
0.33
0.19
0°
0.51
0.25
8°
0.008
0°
H
U
h
-
E
0.010
-
0.020
-
0.25
-
0.50
-
L
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 1 - August 2008
© Diodes Incorporated 2008
7
www.zetex.com
www.diodes.com
ZXMP3F37DN8
Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by
Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such
use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including
negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss
in the use of these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
B.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.
Quality of product
Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Diodes Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com
Diodes Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the
use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
Diodes Zetex sales offices
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Zetex (Asia) Ltd
Diodes Incorporated
15660 N. Dallas Parkway
Suite 850, Dallas
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
TX75248, USA
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (1) 972 385 2810
www.diodes.com
© 2008 Published by Diodes Incorporated
Issue 1 - August 2008
© Diodes Incorporated 2008
8
www.zetex.com
www.diodes.com
相关型号:
ZXMP4435N8
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
ZETEX
ZXMP4435N8TA
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
ZETEX
ZXMP4435N8TC
Power Field-Effect Transistor, 8.6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
ZETEX
©2020 ICPDF网 联系我们和版权申明