ZXMP3F30FHTA [TYSEMI]
30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Power management; SOT23封装30V P沟道增强型MOSFET电源管理
| 型号： | ZXMP3F30FHTA |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET Power management |
| 文件： | 总3页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
ZXMP3F30FH
30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET
Summary
ID (A)
V(BR)DSS (V)
RDS(on) (Ω)
0.080 @ V = -10V
-4.0
GS
-30
0.140 @ V = -4.5V
GS
Description
This new generation Trench MOSFET from TY has been designed to minimize the
on-state resistance (RDS(on)) and yet maintain superior switching performance.
Features
•
•
•
•
Low on-resistance
Fast switching speed
4.5V gate drive capability
Thermally enhanced SOT23 package
Applications
•
•
•
Power management
Portable Equipment
Battery charging
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMP3F30FHTA
Device marking
KPA
7”
8mm
3,000
Pinout – top view
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Product specification
ZXMP3F30FH
Absolute Maximum Ratings
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
VDSS
Drain-Source voltage
-30
V
VGS
ID
Gate-Source voltage
V
V
±20
-3.4
-2.7
-2.8
-4.0
(b)
(b)
(a)
(d)
Continuous Drain current @ VGS= -10V; TA=25°C
@ VGS= -10V; TA=70°C
@ VGS= -10V; TA=25°C
@ VGS= -10V; TL=25°C
(c)
IDM
-15.3
-2
A
A
A
Pulsed Drain current
(b)
Continuous Source current (Body diode)
IS
(c)
-15.3
Pulsed Source current (Body diode)
ISM
PD
(a)
0.95
7.6
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(b)
1.4
11.2
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
P
D
P
D
(d)
1.96
15.7
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
T , T
j
Operating and storage temperature range
-55 to 150
stg
°C
Thermal resistance
Parameter
Symbol
Value
131
Unit
°C/W
(a)
R
θJA
Junction to ambient
(b)
R
89
°C/W
°C/W
Junction to ambient
θJA
(d)
R
63.77
Junction to lead
θJL
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
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Product specification
ZXMP3F30FH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symb Min.
ol
Typ.
Max. Unit Conditions
Static
Drain-Source breakdown
voltage
-30
V
V(BR)DSS
IDSS
ID = -250μA, VGS=0V
DS=-30V, VGS=0V
Zero Gate voltage Drain
current
-1.0
100
µA
V
IGSS
Gate-Body leakage
nA
V
VGS=±20V, VDS=0V
ID= -250μA, VDS=VGS
Gate-Source threshold
voltage
VGS(th)
-1.0
RDS(on)
Static Drain-Source
0.080
0.140
Ω
V
GS= -10V, ID= -2.5A
GS= -4.5V, ID= -1.9A
( )
on-state resistance *
V
gfs
Forward
5
S
VDS= -15V, ID= -3A
( ) (†)
Transconductance *
(†)
Dynamic
Input capacitance
Output capacitance
370
72
pF
pF
pF
Ciss
Coss
Crss
VDS= -15V, VGS=0V
f=1MHz
Reverse transfer
capacitance
38
(‡) (†)
Switching
Turn-on-delay time
Rise time
1.3
2.6
49
ns
ns
ns
ns
td(on)
tr
td(off)
tf
VDD= -15V, VGS= -10V
ID= -1A
Turn-off delay time
RG ≅ 6.0Ω,
Fall time
22
Gate charge
Total Gate charge
7
nC
nC
nC
Qg
VDS= -15V, VGS= -10V
ID= -3A
Gate-Source charge
Gate-Drain charge
Source–Drain diode
1.2
1.3
Qgs
Qgd
( )
IS= -1.7A,VGS=0V
-0.80
14.6
9.5
-1.2
V
Diode forward voltage *
VSD
trr
(‡)
ns
nC
Reverse recovery time
IS= -1.5A,di/dt=100A/μs
(‡)
Qrr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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