ZXMN6A25KTC [DIODES]
60V DPAK N-channel enhancement mode MOSFET; DPAK 60V N沟道增强型MOSFET
| 型号： | ZXMN6A25KTC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V DPAK N-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：804K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN6A25K
60V DPAK N-channel enhancement mode MOSFET
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.050 @ V = 10V
10.7
9
GS
60
0.070 @ V = 4.5V
GS
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
D
S
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
G
DPAK package
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
D
D
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
G
S
Pinout - top view
ZXMN6A25KTC
13
16
2,500
Device marking
ZXMN
6A25
Issue 3 - Novmber 2006
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ZXMN6A25K
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
60
V
DSS
Gate-source voltage
V
20
V
A
GS
(b)
(b)
(a)
I
10.7
D
Continuous drain current @ V = 10V; T
=25°C
=70°C
=25°C
GS
amb
amb
amb
8.6
7
A
A
@ V = 10V; T
GS
@ V = 10V; T
GS
(c)
I
I
36
11.8
36
A
A
DM
Pulsed drain current
(b)
I
S
Continuous source current (body diode)
(c)
A
Pulsed source current (body diode)
SM
(a)
P
P
P
4.25
W
D
D
D
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
amb
amb
amb
34
mW/°C
W
(b)
(d)
9.85
78.7
2.11
mW/°C
W
16.8
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
29.4
°C/W
⍜JA
⍜JA
⍜JA
Junction to ambient
(b)
12.7
59.1
°C/W
°C/W
Junction to ambient
(d)
Junction to ambient
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum
junction temperature.
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz. copper, in
still air conditions.
Issue 3 - Novmber 2006
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ZXMN6A25K
Thermal characteristics
Issue 3 - Novmber 2006
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ZXMN6A25K
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min. Typ. Max. Unit Conditions
Drain-source breakdown
voltage
V
60
1
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain current I
1.0
100
A
nA
V
V
= 60V, V =0V
GS
DSS
DS
Gate-body leakage
I
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold voltage
V
3
I = 250A, V =V
D DS GS
GS(th)
DS(on)
Static drain-source on-state
R
0.050
0.070
⍀
V
= 10V, I = 3.6A
D
GS
GS
DS
(*)
resistance
⍀
V
V
= 4.5V, I = 3.0A
D
(*)(‡)
g
10.2
S
= 15V, ID= 4.5A
Forward transconductance
fs
(‡)
Dynamic
Input capacitance
C
C
C
1063
104
64
pF
pF
pF
V
= 30V, V =0V
DS GS
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
3.8
4.0
ns
ns
ns
ns
nC
V
= 30V, I = 1A
DD D
d(on)
R ≅6.0⍀, V = 10V
G
GS
r
Turn-off delay time
Fall time
26.2
10.6
11.0
d(off)
f
Gate charge
Q
V
= 30V, V = 5V
DS GS
g
I = 1.4A
D
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
20.4
4.1
nC
nC
nC
V
= 30V, V = 10V
DS GS
g
I = 1.4A
D
gs
gd
5.1
(*)
V
0.85
0.95
V
T =25°C, I = 5.5A,
j S
SD
Diode forward voltage
V
=0V
GS
(‡)
t
22.0
21.4
ns
T =25°C, I = 2.2A,
j S
di/dt=100A/s
Reverse recovery time
rr
(‡)
Q
nC
rr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature
(‡) For design aid only, not subject to production testing.
Issue 3 - Novmber 2006
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ZXMN6A25K
Typical characteristics
Issue 3 - Novmber 2006
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ZXMN6A25K
Typical characteristics
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
Issue 3 - Novmber 2006
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ZXMN6A25K
Package outline - DPAK
DIM
Inches
Min
0.086
-
Millimeters
DIM
Inches
Min Max
0.090 BSC
Millimeters
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
-
Min
2.18
-
Max
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
-
Min
Max
A
A1
b
b2
b3
c
c2
D
D1
E
e
H
L
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L1
L2
L3
L4
L5
θ1°
θ°
-
0.108 REF
0.020 BSC
2.74 REF
0.508 BSC
0.035
0.065
0.040
0.060
10°
0.89
1.65
1.016
1.52
10°
0.025
0.045
0°
0.635
1.14
0°
0.265
-
6.73
-
0°
15°
0°
15°
E1
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 3 - Novmber 2006
© Zetex Semiconductors plc 2006
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ZXMN6A25K
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
Zetex sales offices
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
© 2006 Published by Zetex Semiconductors plc
Issue 3 - Novmber 2006
© Zetex Semiconductors plc 2006
8
www.zetex.com
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