ZXMN7A11GTA [ZETEX]
70V N-channel enhancement mode MOSFET; 70V N沟道增强型MOSFET
| 型号： | ZXMN7A11GTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 70V N-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：413K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN7A11G
70V N-channel enhancement mode MOSFET
Summary
V
=70V : R
=0.13⍀
DS(on)
DSS
I =3.8A
D
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
D
S
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G
Low gate drive
SOT223 package
Applications
•
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
Class D audio output stages
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
ZXMN7A11GTA
ZXMN7A11GTC
7
12
12
1,000
4,000
13
Device marking
ZXMN
7A11
Issue 1 - March 2006
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1
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ZXMN7A11G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
70
V
DSS
Gate-source voltage
V
20
V
A
GS
(b)
(b)
(a)
I
3.8
D
Continuous drain current @ V =10V; T =25°C
GS
A
3.0
2.7
A
A
@ V =10V; T =70°C
GS
A
@ V =10V; T =25°C
GS
A
(c)
I
I
10
5
A
A
A
DM
Pulsed drain current
(b)
I
S
Continuous source current (body diode)
(c)
10
Pulsed source current (body diode)
SM
(a)
P
2
16
W
mW/°C
D
Power dissipation at T =25°C
Linear derating factor
A
(b)
P
3.9
31
W
mW/°C
Power dissipation at T =25°C
Linear derating factor
D
A
Operating and storage temperature range
T , T
-55 to
+150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
62.5
°C/W
⍜JA
⍜JA
Junction to ambient
(b)
32
°C/W
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ 5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10s - pulse width limited by maximum junction
temperature.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
2
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ZXMN7A11G
Characteristics
Issue 1 - March 2006
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3
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ZXMN7A11G
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol Min.
Typ. Max. Unit Conditions
Drain-source breakdown
voltage
V
70
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain current I
1
A
nA
V
V
= 70V, V =0V
GS
DSS
DS
Gate-body leakage
I
100
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold voltage
Static drain-source on-state
V
R
1.0
I = 250A, V =V
D DS GS
GS(th)
0.13
0.19
⍀
V
= 10V, I = 4.4A
D
DS(on)
GS
GS
DS
(*)
resistance
⍀
V
V
= 4.5V, I = 3.8A
D
(*)(‡)
g
4.66
S
= 15V, I = 4.4A
D
fs
Forward transconductance
(‡)
Dynamic
Input capacitance
C
C
C
298
35
pF
pF
pF
iss
V
= 40V, V =0V
GS
DS
Output capacitance
oss
rss
f=1MHz
Reverse transfer capacitance
21
(†)(‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
1.9
2
ns
ns
ns
ns
nC
d(on)
V
= 35V, I = 1A
D
r
DD
R ≅6.0⍀, V = 10V
Turn-off delay time
Fall time
11.5
5.8
4.35
G
GS
d(off)
f
Total gate charge
Q
V
= 35V, V = 5V
DS GS
g
I = 4.4A
D
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
7.4
1.06
1.8
nC
nC
nC
g
V
=35V, V = 10V
GS
DS
gs
gd
I = 4.4A
D
(*)
V
0.85
0.95
V
T =25°C, I = 2.5A,
j S
SD
Diode forward voltage
V
=0V
GS
(‡)
t
19.8
14
ns
Reverse recovery time
rr
T =25°C, I = 2.5A,
di/dt=100A/s
j
S
(‡)
Q
nC
rr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
4
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ZXMN7A11G
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
ZXMN7A11G
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
6
www.zetex.com
ZXMN7A11G
Intentionally left blank
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
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ZXMN7A11G
Package outline - SOT223
DIM
Millimeters
Min Max
Inches
Min
DIM
Millimeters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
-
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
8
www.zetex.com
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