ZXMN6A25N8TA [DIODES]
60V SO8 N-channel enhancement mode MOSFET; SO8 60V N沟道增强型MOSFET
| 型号： | ZXMN6A25N8TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 60V SO8 N-channel enhancement mode MOSFET |
| 文件： | 总8页 (文件大小：255K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
V(BR)DSS
RDS(on) (Ω)
ID(A)
60
0.050 @ VGS=10V
0.070 @ VGS=4.5V
7.0
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
D
S
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
G
SO8 package
Applications
•
•
•
•
DC-DC Converters
Power management functions
Disconnect switches
Motor control
S
S
S
G
D
D
D
D
Ordering information
Top view
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A25N8TA
7
12
500
Device marking
ZXMN6A25
Issue 1 - April 2008
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ZXMN6A25N8
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-Source voltage
V
60
VDSS
Gate-Source voltage
V
A
± 20
VGS
ID
(b)
5.7
4.5
4.3
7.0
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
(b)
(a)
@ VGS= 10V; TA=25°C
(a)(d)
@ VGS= 10V; TL=25°C
(c)
IDM
25.7
4.1
A
A
A
Pulsed Drain current
(b)
Continuous Source current (Body diode)
IS
(c)
25.7
Pulsed Source current (Body diode)
ISM
PD
(a)
1.56
12.5
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(b)
2.8
22.2
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
P
D
P
D
(d)
4.14
33.1
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
T , T
j
Operating and storage temperature range
-55 to 150
stg
°C
Thermal resistance
Parameter
Symbol
Value
80
Unit
°C/W
°C/W
°C/W
(a)
R
θJA
Junction to ambient
(b)
R
θJA
45
Junction to ambient
(d)
R
θJL
30.2
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
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ZXMN6A25N8
Thermal characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
RDS(on)
10
25mm x 25mm
1oz FR4
Limited
1
DC
100m
10m
1m
1s
100ms
10ms
Single Pulse
Tamb=25°C
1ms
100µs
100m
VDS Drai1n-Source Vol1ta0ge (V)
0
20 40 60 80 100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
80
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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ZXMN6A25N8
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
60
V
V(BR)DSS
IDSS
ID =250μA, VGS=0V
DS=60V, VGS=0V
Zero gate voltage drain
current
1.0
µA
V
IGSS
Gate-Body leakage
100
3
nA
V
VGS=±20V, VDS=0V
ID=250μA, VDS=VGS
Gate-Source threshold
voltage
VGS(th)
1
VGS= 10V, ID= 3.6A
Static Drain-Source
0.050
0.070
Ω
RDS(on)
gfs
( )
VGS= 4.5V, ID= 3.0A
on-state resistance *
VDS= 15V, ID= 4.5A
Forward
10.2
S
( ) (†)
Transconductance *
(†)
Dynamic
Input capacitance
Output capacitance
pF
pF
pF
Ciss
Coss
Crss
1063
104
64
VDS= 30V, VGS=0V
f=1MHz
Reverse transfer
capacitance
(‡) (†)
Switching
Turn-on-delay time
Rise time
ns
ns
ns
ns
nC
3.8
4.0
td(on)
tr
td(off)
tf
V
DD= 30V, VGS= 10V
ID= 1A
Turn-off delay time
Fall time
26.2
10.6
11.0
RG ≅ 6.0Ω,
Gate charge
VDS= 30V, VGS= 5V
ID= 4.5A
Qg
Total gate charge
nC
nC
nC
20.4
4.1
Qg
VDS= 30V, VGS= 10V
ID= 4.5A
Gate-Source charge
Gate-Drain charge
Source–Drain diode
Qgs
Qgd
5.1
( )
V
Diode forward voltage *
0.85
22.0
21.4
0.95
VSD
trr
IS= 5.5A,VGS=0V
(‡)
ns
nC
Reverse recovery time
IS= 2.2A,di/dt=100A/μs
(‡)
Reverse recovery charge
Qrr
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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ZXMN6A25N8
Typical characteristics
10V
T = 150°C
T = 25°C
10
4.5V
4.5V
4V
10V
10
1
4V
3.5V
3.5V
3V
1
3V
2.5V
VGS
0.1
0.1
0.01
VGS
2V
2.5V
0.01
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 4.5A
10
1
T = 150°C
RDS(on)
VGS(th)
T = 25°C
VDS = 10V
0.1
0.01
VGS = VDS
ID = 250uA
2
3
4
5
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
100
2.5V
1000
100
10
T = 25°C
T = 150°C
VGS
10
3V
3.5V
T = 25°C
1
4V
4.5V
10V
1
0.1
0.1
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
VSD Source-Drain Voltage (V)
ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
Issue 1 - April 2008
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ZXMN6A25N8
Typical characteristics
1600
1400
1200
10
8
VGS = 0V
f = 1MHz
ID = 4.5A
1000
6
CISS
800
600
400
200
0
COSS
4
CRSS
2
VDS = 30V
0
0.1
1
10
0
5
10
15
20
25
VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test circuits
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ZXMN6A25N8
Package outline SO8
SO8 Package Information
DIM
Inches
Min.
Millimeters
DIM
Inches
Min. Max.
0.050 BSC
Millimeters
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
1.27 BSC
0.013
0.020
0.010
8°
0.33
0.19
0°
0.51
0.25
8°
0.008
0°
H
U
h
-
E
0.010
-
0.020
-
0.25
-
0.50
-
L
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Issue 1 - April 2008
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ZXMN6A25N8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex
with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach
of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these
circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
B.
Reproduction
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writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
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Terms and Conditions
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
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Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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© 2008 Published by Zetex Semiconductors plc
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
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