ZX5T853GTC [DIODES]

100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223; 100V NPN低SAT中功率低饱和晶体管采用SOT223
ZX5T853GTC
型号: ZX5T853GTC
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
100V NPN低SAT中功率低饱和晶体管采用SOT223

晶体 晶体管 功率双极晶体管 开关 光电二极管
文件: 总6页 (文件大小:128K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZX5T853G  
100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR  
IN SOT223  
SUMMARY  
BVCEO = 100V : RSAT = 36m ; IC = 6A  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN  
transistor offers extremely low on state losses making it ideal for use in DC-DC  
circuits and various driving and power management functions.  
FEATURES  
SOT223  
6 am ps continuous current  
Up to 10 am ps peak current  
Very low saturation voltages  
APPLICATIONS  
Motor driving  
Line switching  
High side switches  
Subscriber line interface cards (SLIC)  
ORDERING INFORMATION  
PINOUT  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T853GTA  
ZX5T853GTC  
7”  
12m m  
1000 units  
4000 units  
em bossed  
13”  
DEVICE MARKING  
X5T853  
TOP VIEW  
ISSUE 2 - SEPTEMBER 2003  
1
S E M IC O N D U C T O R S  
ZX5T853G  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
UNIT  
Co lle cto r-b a s e vo lta g e  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
BV  
BV  
BV  
200  
V
CBO  
CEO  
EBO  
100  
V
7
V
A
(a )  
Co n tin u o u s co lle cto r cu rre n t  
I
6
C
Pe a k p u ls e cu rre n t  
(a )  
I
10  
3.0  
A
CM  
Po w e r d is s ip a tio n a t T =25°C  
A
P
W
D
Lin e a r d e ra tin g fa cto r  
24  
m W/°C  
W
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
1.6  
D
Lin e a r d e ra tin g fa cto r  
12.8  
m W/°C  
°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
-55 to +150  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
UNIT  
(a )  
J u n ctio n to a m b ie n t  
R
42  
°C/W  
J A  
NOTES  
(a) For a device surface m ounted on 52m m x 52m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(b) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 2 - SEPTEMBER 2003  
2
S E M IC O N D U C T O R S  
ZX5T853G  
CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2003  
3
S E M IC O N D U C T O R S  
ZX5T853G  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
PARAMETER  
S YMBOL  
MIN.  
200  
200  
100  
7
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
BV  
235  
235  
115  
8.1  
V
V
I =100A  
C
CBO  
CER  
CEO  
EBO  
I =1A, RBՅ1k⍀  
C
V
I =10m A*  
C
V
I =100A  
E
I
20  
0.5  
20  
n A  
A  
n A  
A  
n A  
V
=150V  
CB  
CBO  
V
=150V,T  
=100ЊC  
=100ЊC  
CB  
am b  
am b  
Co lle cto r cu t-o ff cu rre n t  
I
V =150V  
CB  
CER  
R Յ 1k⍀  
0.5  
10  
V =150V,T  
CB  
Em itte r cu t-o ff cu rre n t  
I
V
=6V  
EBO  
EB  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
21  
50  
35  
m V I =0.1A, I =5m A*  
C B  
CE(S AT)  
65  
m V I =1A, I =100m A*  
C B  
95  
125  
220  
m V I =2A, I =100m A*  
C B  
180  
m V I =5A, I =500m A*  
C B  
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn -o n vo lta g e  
V
V
H
1020 1120  
m V I =5A, I =500m A*  
C B  
BE(S AT)  
BE(ON)  
FE  
920  
230  
200  
60  
1000  
m V I =5A, V =2V*  
C CE  
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
100  
100  
30  
I =10m A, V =2V*  
C CE  
300  
I =2A, V =2V*  
C
CE  
I =5A, V =2V*  
C
CE  
10  
20  
I =10A, V =2V*  
C CE  
Tra n s itio n fre q u e n cy  
f
130  
MHz I =100m A, V =10V  
T
C
CE  
f=50MHz  
Ou tp u t ca p a cita n ce  
S w itch in g tim e s  
C
26  
41  
p F  
n s  
V
=10V, f=1MHz*  
OBO  
CB  
t
t
I =1A, V =10V,  
C CC  
ON  
OFF  
1010  
I
=I =100m A  
B1 B2  
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.  
ISSUE 2 - SEPTEMBER 2003  
4
S E M IC O N D U C T O R S  
ZX5T853G  
TYPICAL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2003  
5
S E M IC O N D U C T O R S  
ZX5T853G  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Millim eters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
DIM  
DIM  
Min  
-
Max  
Min  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
A
A1  
b
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
0.0905 BSC  
0.181 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
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ISSUE 2 - SEPTEMBER 2003  
6
S E M IC O N D U C T O R S  

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