ZX5T869ZTA [ZETEX]
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89; 25V NPN低饱和中功率晶体管SOT89
| 型号： | ZX5T869ZTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 |
| 文件： | 总6页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZX5T869Z
25V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BVCEO = 25V : RSAT = 25m ; IC = 5.5A
DESCRIPTION
Packaged in the SOT89 outline this new 5th generation low saturation 25V
NPN transistor offers extrem ely low on state losses m aking it ideal for use in
DC-DC circuits and various driving and power m anagem ent functions.
FEATURES
• Extrem ely low equivalent on-resistance; RSAT = 25m at 6.5A
SOT89
• 5.5 am ps continuous current
• Up to 20 am ps peak current
• Very low saturation voltages
• Excellent h
characteristics up to 20 am ps
FE
APPLICATIONS
• Em ergency lighting circuits
• Motor driving (including DC fans)
• Solenoid, relay and actuator drivers
• DC m odules
• Backlight Inverters
PINOUT
ORDERING INFORMATION
DEVICE
REEL
S IZE
QUANTITY PER
REEL
TAPE WIDTH
7"
12m m
1000 units
ZX5T869ZTA
em bossed
DEVICE MARKING
• 869
TOP VIEW
ISSUE 2 - J UNE 2005
S E M IC O N D U C T O R S
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ZX5T869Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
60
UNIT
V
Co lle cto r-b a s e vo lta g e
Co lle cto r-e m itte r vo lta g e
Em itte r-b a s e vo lta g e
BV
BV
BV
CBO
CEO
EBO
25
V
7
V
(a )
Co n tin u o u s co lle cto r cu rre n t
I
5.5
20
A
C
Pe a k p u ls e cu rre n t
(a )
I
A
CM
Po w e r d is s ip a tio n a t T =25°C
A
P
1.5
12
W
D
Lin e a r d e ra tin g fa cto r
m W/°C
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
2.1
W
D
Lin e a r d e ra tin g fa cto r
16.8
m W/°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
LIMIT
83
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
J A
J A
(b )
J u n ctio n to a m b ie n t
60
NOTES:
(a) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b)For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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S E M IC O N D U C T O R S
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ZX5T869Z
CHARACTERISTICS
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S E M IC O N D U C T O R S
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ZX5T869Z
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
S YMBOL
PARAMETER
MIN.
60
TYP. MAX. UNIT CONDITIONS
Co lle cto r-b a s e b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Em itte r b a s e b re a kd o w n vo lta g e
Co lle cto r cu t-o ff cu rre n t
BV
BV
BV
BV
120
120
35
V
I
I
I
I
= 100A
CBO
CER
CEO
EBO
C
C
C
E
60
V
= 1A, RB Յ 1k⍀
= 10m A*
25
V
7.0
8.1
V
= 100A
I
20
0.5
20
nA
A
nA
A
nA
m V
m V
m V
m V
m V
m V
m V
V
= 50V
CBO
CB
V
= 50V, T
= 50V
=100ЊC
=100ЊC
CB
am b
am b
Co lle cto r cu t-o ff cu rre n t
I
V
CB
CER
RՅ1k⍀
0.5
10
V
= 50V, T
= 6V
CB
Em itte r cu t-o ff cu rre n t
I
V
EB
EBO
Co lle cto r-e m itte r s a tu ra tio n vo lta g e
V
25
30
35
I
I
I
I
I
I
I
I
I
I
I
I
= 500m A, I = 10m A*
B
CE(S AT)
C
C
C
C
C
C
C
C
C
C
C
C
45
= 1A, I = 100m A*
B
= 1A, I = 10m A*
B
45
70
= 2A, I = 10m A*
B
105
160
950
860
400
450
275
55
130
200
1050
960
= 6.5A, I = 150m A*
B
Ba s e -e m itte r s a tu ra tio n vo lta g e
Ba s e -e m itte r tu rn o n vo lta g e
V
V
= 6.5A, I = 150m A*
B
BE(S AT)
BE(ON)
FE
= 6.5A, V = 1V*
CE
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio
h
300
300
200
40
= 10m A, V = 1V*
CE
= 1A, V = 1V*
CE
= 7A, V = 1V*
CE
= 20A, V = 1V*
CE
Tra n s itio n fre q u e n cy
f
150
= 100m A, V = 10V
CE
T
f=50MHz
V = 10V, f= 1MHz*
CB
Ou tp u t ca p a cita n ce
S w itch in g tim e s
C
48
33
pF
ns
OBO
t
t
I
I
= 1A, V = 10V,
CC
ON
C
464
= -I = 100m A
B2
OFF
B1
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
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ZX5T869Z
TYPICAL CHARACTERISTICS
ISSUE 2 - J UNE 2005
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ZX5T869Z
PACKAGE OUTLINE
PACKAGE DIMENSIONS
Millim eters
DIM
Inches
Millim eters
Inches
Min
DIM
Min
1.40
0.38
-
Max
1.60
0.48
0.53
1.80
0.44
4.60
Min
Max
0.630
0.019
0.021
0.071
0.017
0.181
Min
1.40
3.75
-
Max
Max
0.059
0.167
0.102
0.118
0.112
-
A
b
0.550
0.015
-
e
E
1.50
4.25
2.60
3.00
2.85
-
0.055
0.150
-
b1
b2
c
E1
G
H
-
1.50
0.28
4.40
0.060
0.011
0.173
2.90
2.60
-
0.114
0.102
-
D
© Zetex Sem iconductors plc 2005
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ISSUE 2 - J UNE 2005
S E M IC O N D U C T O R S
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