ZX5T949G [ZETEX]
30V PNP LOW SATURATION TRANSISTOR IN SOT223; 30V PNP低饱和晶体管采用SOT223
| 型号： | ZX5T949G |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V PNP LOW SATURATION TRANSISTOR IN SOT223 |
| 文件： | 总6页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZX5T949G
30V PNP LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BV
= -30V : R
= 31m ; I = -5.5A
SAT C
CEO
DESCRIPTION
Packaged in the SOT223 outline this new 5th generation low saturation 30V
PNP transistor offers extrem ely low on state losses m aking it ideal for use in
DC-DC circuits and various driving and power m anagem ent functions.
FEATURES
SOT223
• 5.5 Am ps continuous current
• Up to 20 Am ps peak current
• Very low saturation voltages
• Exceptional gain linearity down to 10m A
APPLICATIONS
• DC - DC Converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
PINOUT
ZX5T949GTA
ZX5T949GTC
7”
12m m
em bossed
1,000 units
4,000 units
13”
DEVICE MARKING
• X5T949
TOP VIEW
ISSUE 1 - NOVEMBER 2003
S E M IC O N D U C T O R S
1
ZX5T949G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
-50
UNIT
V
Co lle cto r-b a s e vo lta g e
Co lle cto r-e m itte r vo lta g e
Em itte r-b a s e vo lta g e
BV
BV
BV
CBO
CEO
EBO
-30
V
-7
V
(a )
Co n tin u o u s co lle cto r cu rre n t
I
-5.5
-20
A
C
Pe a k p u ls e cu rre n t
(a )
I
A
CM
Po w e r d is s ip a tio n a t T =25°C
A
P
3.0
24
W
D
Lin e a r d e ra tin g fa cto r
m W/°C
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
1.6
W
D
Lin e a r d e ra tin g fa cto r
12.8
m W/°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to 150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
42
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
78
NOTES
(a) For a device surface m ounted on 52m m x 52m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - NOVEMBER 2003
S E M IC O N D U C T O R S
2
ZX5T949G
CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
S E M IC O N D U C T O R S
3
ZX5T949G
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL MIN.
TYP. MAX. UNIT CONDITIONS
Co lle cto r-b a s e b re a kd o w n vo lta g e
BV
-50
-50
-30
-7.0
-70
-70
-40
-8.0
<1
V
V
V
V
I
I
I
I
= -100A
CBO
CER
CEO
EBO
C
C
C
E
Co lle cto r-e m itte r b re a kd o w n vo lta g e BV
Co lle cto r-e m itte r b re a kd o w n vo lta g e BV
= -1A, RB < 1k⍀
= -10m A *
Em itte r-b a s e b re a kd o w n vo lta g e
Co lle cto r cu t-o ff cu rre n t
BV
= -100A
I
-20
nA
V
V
= -40V
CBO
CB
-0.5
A
= -40V, T
= 100°C
= 100°C
CB
a m b
Co lle cto r cu t-o ff cu rre n t
I
<1
-20
nA
V
V
= -40V
CER
CB
R < 1k⍀
-0.5
A
= -40V, T
CB
a m b
Em itte r cu t-o ff cu rre n t
I
<1
-10
nA
V
= -6V
EBO
EB
Co lle cto r-e m itte r s a tu ra tio n vo lta g e
V
-30
-40
-45
-60
m V
m V
m V
m V
m V
I
I
I
I
I
= -0.5A, I = -20m A *
B
CE(S AT)
C
C
C
C
C
= -1A, I = -100m A *
B
= -1A, I = -20m A *
B
-60
-85
= -2A, I = -200m A *
B
-70
-90
= -5.5A, I = -500m A *
B
-170
-210
Ba s e -e m itte r s a tu ra tio n vo lta g e
Ba s e -e m itte r tu rn -o n vo lta g e
V
V
-1030 -1130
-900 -1000
225
m V
m V
I = -5.5A, I = -500m A *
C B
BE(S AT)
BE(ON)
FE
I
= -5.5A, V = -1V *
CE
C
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio
h
100
100
70
I
I
I
I
= -10m A, V = -1V *
CE
C
C
C
C
200
145
20
300
= -1A, V = -1V *
CE
= -5A, V = -1V *
CE
= -20A, V = -1V *
CE
10
Tra n s itio n fre q u e n cy
f
110
I
= -100m A, V = -10V
CE
T
C
f = 50MHz
V = -10V, f = 1MHz *
CB
Ou tp u t ca p a cita n ce
S w itch in g tim e s
C
83
pF
ns
OBO
t
t
43
I
I
= -1A, V = -10V,
CC
ON
C
230
= I = -100m A
B2
OFF
B1
NOTES
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
ISSUE 1 - NOVEMBER 2003
S E M IC O N D U C T O R S
4
ZX5T949G
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2003
S E M IC O N D U C T O R S
5
ZX5T949G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Millim eters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
DIM
DIM
Min
-
Max
Min
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
© Zetex plc 2003
Corporate Headquaters
Europe
Am ericas
Asia Pacific
Zetex plc
Zetex Gm bH
Zetex Inc
Zetex (Asia) Ltd
Fields New Road
Chadderton
Streitfeldstraß e 19
D-81673 München
700 Veterans Mem orial Hwy
Hauppauge, NY 11788
3701-04 Metroplaza Tower 1
Hing Fong Road
Oldham , OL9 8NP
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Germ any
USA
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Th e s e o ffice s a re s u p p o rte d b y a g e n ts a n d d is trib u to rs in m a jo r co u n trie s w o rld -w id e .
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product inform ation, log on to w w w .zetex.com
ISSUE 1 - NOVEMBER 2003
S E M IC O N D U C T O R S
6
相关型号：
ZX5T949GTC
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
ZETEX
ZX5T949GTC
Power Bipolar Transistor, 5.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin, TO-261AA, 4 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明