ZTX796A [DIODES]

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR; PNP硅平面中功率高增益晶体管
ZTX796A
型号: ZTX796A
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
PNP硅平面中功率高增益晶体管

晶体 小信号双极晶体管 局域网
文件: 总4页 (文件大小:223K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
A Product Line of  
Diodes Incorporated  
ZTX796A  
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
200 Volt VCEO  
Gain of 250 at IC=0.3 Amps  
Very low saturation voltage  
Case: E-Line  
E-Line  
TO92 Compatible  
Rounded  
face  
C B E  
Bottom View  
Pin Configuration  
Maximum Ratings  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-200  
-200  
-5  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
-0.5  
A
IC  
Thermal Characteristics  
Characteristic  
Practical Power Dissipation (Note 1)  
Power Dissipation  
Symbol  
Ptotp  
Value  
1.5  
Unit  
W
W
mW /°C  
TA = 25°C  
Derate above 25°C  
1
5.7  
Ptot  
Thermal Resistance Junction to Ambient1 (Note 2)  
Thermal Resistance Junction to Ambient2 (Note 2)  
Thermal Resistance Junction to Case  
175  
116  
°C/W  
°C/W  
°C/W  
°C  
Rθ  
Rθ  
JA1  
JA2  
70  
Rθ  
JC  
Operating and Storage Temperature Range  
-55 to +200  
TJ, TSTG  
Notes:  
1. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum  
2. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  
1 of 4  
www.diodes.com  
September 2009  
© Diodes Incorporated  
ZTX796A  
Document Number DS31908 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZTX796A  
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 3)  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min  
-200  
-200  
-5  
Typ  
Max  
-
-
Unit  
V
Test Condition  
IC = -100µA  
-
-
-
-
-
V
IC = -10mA  
-
V
IE = -100µA  
-
-0.1  
-0.1  
µA  
µA  
VCB = -150V  
VEB = -4V  
Emitter Cutoff Current  
-
IEBO  
IC = -50mA, IB = -2mA  
IC = -100mA, IB = -5mA  
IC = -200mA, IB = -20mA  
IC = -200mA, IB = -20mA  
IC = -200mA, VCE = -10V  
-0.2  
-0.3  
-0.3  
mV  
mV  
mV  
Collector-Emitter Saturation Voltage (Note 3)  
-
-
VCE(sat)  
Base-Emitter Saturation Voltage (Note 3)  
Base-Emitter Turn-On Voltage (Note 3)  
-
-
-
-0.95  
mV  
mV  
VBE(sat)  
VBE(on)  
-0.67  
I
I
I
C = -10mA, VCE = -5V  
C = -1A, VCE = -5V  
C = -2A, VCE = -5V  
300  
300  
250  
100  
-
800  
-
Static Forward Current Transfer Ratio (Note 3)  
hFE  
IC = -5A, VCE = -5V  
V
CE = -5V, IC = -50mA  
Transition Frequency  
100  
-
MHz  
fT  
f = 50MHz  
Input Capacitance  
Output Capacitance  
-
-
-
225  
12  
-
-
-
pF  
pF  
ns  
Cibo  
Cobo  
ton  
VEB = -0.5V. f = 1MHz  
VCB = -10V. f = 1MHz  
100  
V
CC = -50V, IC = -100mA  
Switching Times  
-
3200  
-
ns  
toff  
IB1 = -IB2 = -10mA  
Notes:  
3. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle 2%  
2 of 4  
www.diodes.com  
September 2009  
© Diodes Incorporated  
ZTX796A  
Document Number DS31908 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZTX796A  
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR  
3 of 4  
www.diodes.com  
September 2009  
© Diodes Incorporated  
ZTX796A  
Document Number DS31908 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZTX796A  
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR  
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising  
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under  
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such  
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are  
represented on Diodes Incorporated website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales  
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising  
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and  
markings noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the  
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in  
the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,  
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their  
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-  
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes  
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life  
support devices or systems.  
Copyright © 2009, Diodes Incorporated  
www.diodes.com  
4 of 4  
www.diodes.com  
September 2009  
© Diodes Incorporated  
ZTX796A  
Document Number DS31908 Rev. 2 - 2  

相关型号:

ZTX796ASMTA

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZTX796ASMTA

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX796ASMTC

暂无描述
DIODES

ZTX796ASTOA

500mA, 200V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX796ASTZ

Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX849

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
ZETEX

ZTX849

NPN SILICON PLANAR MEDIUM POWER
DIODES

ZTX849SM

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZTX849SMTA

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZTX849SMTC

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZTX849STOA

Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZTX849STOB

NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR
DIODES